# US 12,191,139 B2 · Selective molecular layer deposition of organic and hybrid organic-inorganic layers

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- Number: US 12,191,139 B2
- Document ID: US12191139B2
- Status: Granted
- Kind: B2
- Application number: 17/563,024
- Filed: 2021-12-27
- Published: 2022-04-28
- Granted: 2025-01-07
- Earliest claimed: 2017-05-28
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Tapash Chakraborty; Robert Jan Visser; Prerna Goradia
- Web page: https://patentgrep.com/patent/US12191139B2

## CPC

- H10P 14/683: {carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6506: {Formation of intermediate materials}
- H10P 14/6512: {by exposure to a gas or vapour}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- B05D 1/36: Successively applying liquids or other fluent materials, e.g. without intermediate treatment
- B05D 1/60: {Deposition of organic layers from vapour phase (vapour phase deposition in general C23C14/00, C23C16/00)}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02)

## Abstract

Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.

## Claims

### Claim 1

A method of depositing a film comprising:
providing a substrate comprising a first material having a hydrogen terminated surface and a second material having a hydroxyl terminated surface;
exposing the substrate to a modifying compound comprising a modifying species that reacts with the hydroxyl terminated surface of the second material to form a modified second surface on the second material; and
exposing the substrate to one or more deposition gases which react with the modified second surface of the second material to form a film on the second material,
wherein the modifying species has a general formula (RO)3Si-L-Si(OR)3 where each R is independently selected from C1-C4 alkyl groups and L is an aromatic moiety or a carbon chain comprising 1 to 3 carbon atoms.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first material comprises silicon and the second material comprises silicon oxide.

### Claim 3 (depends on 1)

The method of claim 1, wherein R consists essentially of methyl.

### Claim 4 (depends on 1)

The method of claim 1, wherein L is a phenyl group.

### Claim 5 (depends on 4)

The method of claim 4, wherein the phenyl group has the silicon atoms in a para position.

### Claim 6 (depends on 1)

The method of claim 1, wherein L is —(CH2)2—.

### Claim 7 (depends on 1)

The method of claim 1, wherein L contains at least one double bond.

### Claim 8 (depends on 7)

The method of claim 7, wherein L is-CH═CH—.