# US 12,191,122 B2 · Electrostatic chuck with spatially tunable RF coupling to a wafer

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- Number: US 12,191,122 B2
- Document ID: US12191122B2
- Status: Granted
- Kind: B2
- Application number: 17/603,636
- Filed: 2020-04-14
- Published: 2022-06-23
- Granted: 2025-01-07
- Earliest claimed: 2019-04-22
- Assignees: Lam Research Corporation
- Applicants: Lam Research Corporation
- Inventors: John Drewery
- Web page: https://patentgrep.com/patent/US12191122B2

## CPC

- H01J 37/32724: {Temperature}
- H10P 72/0602: {Temperature monitoring}
- C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices}
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C23C 16/463: {Cooling of the substrate}
- C23C 16/5096: {Flat-bed apparatus}
- H01J 37/32706: {Polarising the substrate}
- H01J 37/32715: {Workpiece holder}
- H10P 72/0432: {mainly by conduction}
- H10P 72/0434: {mainly by convection}
- H10P 72/72: using electrostatic chucks
- H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means}
- H01J 2237/3321: CVD [Chemical Vapor Deposition]
- H01J 2237/3341: Reactive etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A substrate support assembly to support a semiconductor substrate in a processing chamber includes a baseplate arranged in the processing chamber, a dielectric layer arranged on the baseplate to support the semiconductor substrate, an electrode disposed in the dielectric layer along a horizontal plane, and a plurality of channels to carry a fluid. The plurality of channels are disposed in the dielectric layer along the horizontal plane on a side of the electrode facing away from the baseplate.

## Claims

### Claim 1

A substrate support assembly to support a semiconductor substrate in a processing chamber, the substrate support assembly comprising:
a baseplate arranged in the processing chamber;
a dielectric layer arranged on the baseplate to support the semiconductor substrate;
an electrode disposed in the dielectric layer along a horizontal plane;
a first plurality of interconnected channels having an inlet and an outlet that is separate from the inlet to carry a liquid, wherein the first plurality of channels are disposed in the dielectric layer along the horizontal plane on a side of the electrode facing away from the baseplate; and
a controller programmed to control liquid level in the first plurality of channels to vary permittivity of material between the electrode and the semiconductor substrate and to adjust amount of power delivered from the electrode to the semiconductor substrate.

### Claim 2 (depends on 1)

A system comprising:
the substrate support assembly of claim 1;
a power supply to supply power to the electrode during processing of the semiconductor substrate in the processing chamber; and
a source to supply the liquid to fill the first plurality of channels prior to processing the semiconductor substrate.

### Claim 3 (depends on 1)

A system comprising:
the substrate support assembly of claim 1;
a plurality of cooling channels disposed in the baseplate;
a power supply to supply power to the electrode during processing of the semiconductor substrate in the processing chamber;
a source of a coolant to supply the coolant to the cooling channels during the processing of the semiconductor substrate;
a plurality of valves in fluid communication with the source, the cooling channels, and the first plurality of channels; and
a controller programmed to control the plurality of valves to:
supply the coolant from the source to the cooling channels; and
supply the coolant as the liquid to fill the first plurality of channels to a first level prior to performing a first process on the semiconductor substrate.

### Claim 4 (depends on 3)

The system of claim 3 wherein the controller is further programmed to drain the coolant from the first plurality of channels to a second level after performing the first process and prior to performing a second process on the semiconductor substrate.

### Claim 5 (depends on 4)

The system of claim 4 wherein the first level indicates that the first plurality of channels is completely filled with the coolant and wherein the second level indicates that the first plurality of channels is completely empty.

### Claim 6 (depends on 1)

A system comprising:
the substrate support assembly of claim 1;
a power supply to supply power to the electrode during processing of the semiconductor substrate in the processing chamber;
a source to supply the liquid;
a plurality of valves in fluid communication with the source and the first plurality of channels; and
a controller programmed to control the plurality of valves to fill the first plurality of channels with the liquid to a first level prior to performing a first process on the semiconductor substrate.

### Claim 7 (depends on 6)

The system of claim 6 wherein the controller is further programmed to drain the liquid from the first plurality of channels to a second level after performing the first process and prior to performing a second process on the semiconductor substrate.

### Claim 8 (depends on 7)

The system of claim 7 wherein the first level indicates that the first plurality of channels is completely filled with the liquid and wherein the second level indicates that the first plurality of channels is completely empty.

### Claim 9 (depends on 1)

A system comprising:
the substrate support assembly of claim 1;
a power supply to supply power to the electrode during processing of the semiconductor substrate in the processing chamber;
a source to supply the liquid;
a heater associated with the source; and
a controller programmed to supply power to the heater to fill the first plurality of channels with the liquid to a first level prior to performing a first process on the semiconductor substrate.

### Claim 10 (depends on 9)

The system of claim 9 wherein the controller is further programmed to alter the power supplied to the heater to withdraw the liquid from the first plurality of channels to a second level after performing the first process and prior to performing a second process on the semiconductor substrate.

### Claim 11 (depends on 10)

The system of claim 10 wherein the first level indicates that the first plurality of channels is completely filled with the liquid and wherein the second level indicates that the first plurality of channels is completely empty.

### Claim 12 (depends on 1)

A system comprising:
the substrate support assembly of claim 1;
a power supply to supply power to the electrode during processing of the semiconductor substrate in the processing chamber;
a first source of the liquid;
a second source of a fluid;
a plurality of valves in fluid communication with the first and second sources and the first plurality of channels; and
a controller programmed to control the plurality of valves to:
fill the first plurality of channels with the liquid to a first level prior to performing a first process on the semiconductor substrate;
drain the liquid from the first plurality of channels after performing the first process; and
fill the first plurality of channels with the fluid to a second level prior to performing a second process on the semiconductor substrate.

### Claim 13 (depends on 12)

The system of claim 12 wherein the first level is equal to the second level.

### Claim 14 (depends on 12)

The system of claim 12 wherein:
the first level indicates that the first plurality of channels is completely filled with the liquid, and the second level indicates that the first plurality of channels is completely filled with the fluid;
the first level indicates that the first plurality of channels is completely filled with the liquid, and the second level indicates that the first plurality of channels is partially filled with the fluid;
the first level indicates that the first plurality of channels is partially filled with the liquid, and the second level indicates that the first plurality of channels is completely filled with the fluid; or
the first level indicates that the first plurality of channels is partially filled with the liquid, and the second level indicates that the first plurality of channels is partially filled with the fluid.

### Claim 15 (depends on 1)

A system comprising:
the substrate support assembly of claim 1;
a second plurality of channels disposed in the dielectric layer along the horizontal plane on the side of the electrode facing away from the baseplate;
a power supply to supply power to the electrode during processing of the semiconductor substrate in the processing chamber;
a first source of the liquid;
a second source of a fluid;
a plurality of valves in fluid communication with the first and second sources, the first plurality of channels, and the second plurality of channels; and
a controller programmed to control the plurality of valves to:
fill the first plurality of channels with the liquid to a first level prior to performing a process on the semiconductor substrate; and
fill the second plurality of channels with the fluid to a second level prior to performing the process on the semiconductor substrate.

### Claim 16 (depends on 15)

The system of claim 15 wherein the first level is equal to the second level.

### Claim 17 (depends on 15)

The system of claim 15 wherein:
the first level indicates that the first plurality of channels is completely filled with the liquid, and the second level indicates that the second plurality of channels is completely filled with the fluid;
the first level indicates that the first plurality of channels is completely filled with the liquid, and the second level indicates that the second plurality of channels is partially filled with the fluid;
the first level indicates that the first plurality of channels is partially filled with the liquid, and the second level indicates that the second plurality of channels is completely filled with the fluid; or
the first level indicates that the first plurality of channels is partially filled with the liquid, and the second level indicates that the second plurality of channels is partially filled with the fluid.

### Claim 18 (depends on 1)

A system comprising:
the substrate support assembly of claim 1;
a second plurality of channels disposed in the dielectric layer along the horizontal plane on the side of the electrode facing away from the baseplate;
a power supply to supply power to the electrode during processing of the semiconductor substrate in the processing chamber;
a first source of the liquid;
a second source of a fluid;
a plurality of valves in fluid communication with the first and second sources, the first plurality of channels, and the second plurality of channels; and
a controller programmed to control the plurality of valves to:
fill the first plurality of channels with the liquid to a first level prior to performing a first process on the semiconductor substrate while the second plurality of channels is empty;
drain the liquid from the first plurality of channels after performing the first process; and
fill the second plurality of channels with the fluid to a second level prior to performing a second process on the semiconductor substrate.

### Claim 19 (depends on 18)

The system of claim 18 wherein the first level is equal to the second level.

### Claim 20 (depends on 18)

The system of claim 18 wherein:
the first level indicates that the first plurality of channels is completely filled with the liquid, and the second level indicates that the second plurality of channels is completely filled with the fluid;
the first level indicates that the first plurality of channels is completely filled with the liquid, and the second level indicates that the second plurality of channels is partially filled with the fluid;
the first level indicates that the first plurality of channels is partially filled with the liquid, and the second level indicates that the second plurality of channels is completely filled with the fluid; or
the first level indicates that the first plurality of channels is partially filled with the liquid, and the second level indicates that the second plurality of channels is partially filled with the fluid.

### Claim 21 (depends on 1)

The substrate support assembly of claim 1 wherein the first plurality of channels is arranged in an annular region of the dielectric layer.

### Claim 22 (depends on 1)

The substrate support assembly of claim 1 further comprising:
a second plurality of channels disposed in the dielectric layer along the horizontal plane on the side of the electrode facing away from the baseplate;
wherein the first plurality of channels is arranged in a first annular region of the dielectric layer;
wherein the second plurality of channels is arranged in a second annular region of the dielectric layer; and
wherein the first and second annular regions respectively have first and second areas.

### Claim 23 (depends on 1)

The substrate support assembly of claim 1 wherein the first plurality of channels is arranged in a pie-shaped region of the dielectric layer, the pie-shaped region defined by two radial segments and an arc along a circumference of the dielectric layer.

### Claim 24 (depends on 1)

The substrate support assembly of claim 1 further comprising:
a second plurality of channels disposed in the dielectric layer along the horizontal plane on the side of the electrode facing away from the baseplate;
wherein the first plurality of channels is arranged in a first pie-shaped region of the dielectric layer;
wherein the second plurality of channels is arranged in a second pie-shaped region of the dielectric layer;
wherein the first and second pie-shaped regions respectively have first and second areas; and
wherein each of the first and second pie-shaped regions is defined by two radial segments and an arc along a circumference of the dielectric layer.

### Claim 25 (depends on 1)

The substrate support assembly of claim 1 wherein the first plurality of channels is serpentine in shape.

### Claim 26 (depends on 1)

The substrate support assembly of claim 1 wherein the first plurality of channels is formed by a porous material.

### Claim 27 (depends on 1)

The substrate support assembly of claim 1 wherein the first plurality of channels includes a plurality of serpentine portions connected in series.

### Claim 28 (depends on 1)

The substrate support assembly of claim 1 wherein the first plurality of channels is arranged in a manifold in the dielectric layer and includes a plurality of serpentine portions connected in parallel in the manifold.

### Claim 29 (depends on 1)

The substrate support assembly of claim 1 wherein:
the first plurality of channels is formed by arranging two annular grooves in the dielectric layer and arranging a plurality grooves radially connecting the two annular grooves; and
each groove in the plurality grooves is of a smaller width than the two annular grooves.

### Claim 30 (depends on 1)

A system comprising:
the substrate support assembly of claim 1;
a radio frequency power supply to supply radio frequency power to the electrode during processing of the semiconductor substrate in the processing chamber;
a direct current power supply to supply direct current power to the electrode during the processing of the semiconductor substrate; and
a source to supply the liquid to fill the first plurality of channels prior to the processing of the semiconductor substrate.

### Claim 31 (depends on 1)

A system comprising:
the substrate support assembly of claim 1;
a second electrode disposed in the dielectric layer along the horizontal plane on a side of the first plurality of channels facing away from the electrode;
a radio frequency power supply to supply radio frequency power to the electrode during processing of the semiconductor substrate in the processing chamber;
a direct current power supply to supply direct current power to the second electrode during the processing of the semiconductor substrate; and
a source to supply the liquid to fill the first plurality of channels prior to the processing of the semiconductor substrate.

### Claim 32 (depends on 31)

The system of claim 31 wherein:
the second electrode includes a first annular segment and a second annular segment; and
the first plurality of channels is arranged in an annular region of the dielectric layer beneath the first annular segment.

### Claim 33 (depends on 31)

The system of claim 31 wherein:
the second electrode includes a first annular segment and a second annular segment;
the first plurality of channels is arranged in an annular region of the dielectric layer beneath the first annular segment; and
a portion of the dielectric layer separates the second electrode from the first plurality of channels.

### Claim 34 (depends on 31)

The system of claim 31 wherein:
the second electrode includes an outer electrode and an inner electrode;
the outer electrode includes a first annular segment and a second annular segment;
the first plurality of channels is arranged in an annular region of the dielectric layer beneath the first annular segment;
a portion of the dielectric layer separates the second electrode from the first plurality of channels; and
the direct current power supply supplies the direct current power to:
the first annular segment via a first resistor;
the second annular segment via a second resistor; and
the inner electrode via a third resistor.

### Claim 35 (depends on 1)

The substrate support assembly of claim 1 further comprising a source to supply the liquid wherein the liquid includes a fluorinated liquid, or a liquid metal selected from a group consisting of mercury and an alloy containing Bismuth, Antimony, Gallium, and/or Indium.

### Claim 36 (depends on 1)

The substrate support assembly of claim 1 further comprising a controller programmed to vary liquid level in the first plurality of channels to vary permittivity of material between the electrode and the semiconductor substrate.

### Claim 37 (depends on 1)

The substrate support assembly of claim 1 wherein the baseplate comprises cooling channels.

### Claim 38 (depends on 1)

The substrate support assembly of claim 1 further comprising:
a radio frequency (RF) power supply to supply RF power to the electrode during processing of the semiconductor substrate in the processing chamber;
a source to supply the liquid;
a plurality of valves in fluid communication with the source and the first plurality of channels; and
a controller programmed to control the plurality of valves to vary permittivity of material between the electrode and the semiconductor substrate by varying liquid level in the first plurality of channels.