# US 12,191,115 B2 · Dual RF for controllable film deposition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,191,115 B2 - Document ID: US12191115B2 - Status: Granted - Kind: B2 - Application number: 16/694,062 - Filed: 2019-11-25 - Published: 2021-05-27 - Granted: 2025-01-07 - Earliest claimed: 2019-11-25 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Venkata Sharat Chandra Parimi; Xiaoquan Min; Zheng John Ye; Prashant Kumar Kulshreshtha; Vinay K Prabhakar; Lu Xu; Kwangduk Douglas Lee - Web page: https://patentgrep.com/patent/US12191115B2 ## CPC - H01J 37/32165: {Plural frequencies} - C23C 16/345: {Silicon nitride} - C23C 16/401: {containing silicon} - C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof} - C23C 16/45565: {Shower nozzles} - H01J 37/32174: {Circuits specially adapted for controlling the RF discharge} - H01J 37/32394: {Treating interior parts of workpieces} - H01J 37/32504: {Means for preventing sputtering of the vessel} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/668: {the materials being characterised by the deposition precursor materials} - H10P 14/6902: {composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon} - H10P 72/72: using electrostatic chucks - H10P 76/4085: {characterised by the processes involved to create the masks} - H01J 2237/3321: CVD [Chemical Vapor Deposition] - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described. ## Claims ### Claim 1 A method of depositing material, the method comprising: delivering a first mixture comprising a first silicon-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber; forming a plasma of the first mixture within the processing region; depositing a silicon oxide layer on a wall of the semiconductor processing chamber; repeatedly forming alternating layers of silicon oxide and silicon nitride at least five or more times to form a seasoning layer on the wall of the semiconductor processing chamber; delivering a second mixture comprising a second silicon-containing precursor and a nitrogen-containing precursor to the processing region, forming a plasma of the second mixture within the processing region; depositing a silicon nitride layer on the wall of the semiconductor processing chamber; delivering a third mixture comprising a first precursor through a showerhead to the processing region; applying a first voltage at a first frequency to the showerhead; striking a plasma of the third mixture within the processing region using the first voltage at the first frequency from the showerhead; applying a second voltage at a second frequency after striking the plasma and while applying the first voltage at the first frequency to the showerhead to the semiconductor processing chamber, the second frequency being less than the first frequency, wherein: a low frequency terminator is electrically coupled with the showerhead and configured to form a ground path for the second voltage at the second frequency while forming an open circuit from the showerhead for the first voltage at the first frequency; and an electrostatic chuck (ESC) filter receives the second voltage at the second frequency from an RF generator and passes the second voltage at the second frequency to a pedestal, and the ESC filter passes a DC chucking voltage from a power source for an ESC to the pedestal; and depositing a material on a substrate disposed on a pedestal in the processing region, the material comprising elements from the third mixture. ### Claim 2 (depends on 1) The method of claim 1, wherein the second frequency is in a range from 100 kHz to 2 MHz. ### Claim 3 (depends on 1) The method of claim 1, wherein the first frequency is greater than or equal to 10 MHz. ### Claim 4 (depends on 1) The method of claim 1, further comprising placing the substrate on the pedestal in the processing region after depositing the silicon nitride layer. ### Claim 5 (depends on 1) The method of claim 1, wherein the second voltage is applied at a power in a range from 200 W to 500 W. ### Claim 6 (depends on 1) The method of claim 1, wherein: the first precursor is a carbon-containing precursor, and the material is amorphous carbon. ### Claim 7 (depends on 1) The method of claim 1, wherein: the third mixture further comprises a second precursor and a third precursor, the first precursor is a tungsten-containing precursor, the second precursor is a boron-containing precursor, the third precursor is a carbon-containing precursor, and the material comprises tungsten, boron, and carbon. ### Claim 8 (depends on 1) The method of claim 1, wherein: the first frequency is greater than or equal to 10 MHz, and the second frequency is in a range from 100 kHz to 2 MHz. ### Claim 9 (depends on 1) The method of claim 1, wherein a ratio of a thickness of the silicon nitride layer to a thickness of the silicon oxide layer on the wall the semiconductor processing chamber is between 0.5 to 2.0. ### Claim 10 (depends on 1) The method of claim 1, wherein a ratio of a thickness of the silicon nitride layer to a thickness of the silicon oxide layer on the wall the semiconductor processing chamber is between 0.8 to 1.2. ### Claim 11 (depends on 1) The method of claim 1, wherein the first silicon-containing precursor comprises a silicon compound bonded to a combination of hydrogen atoms and/or halogen atoms. ### Claim 12 (depends on 1) The method of claim 1, wherein the nitrogen-containing precursor comprises NH3, N2, or NF3. ### Claim 13 (depends on 1) The method of claim 1, wherein the silicon oxide layer has a thickness of between 100 nm and 4000 nm. ### Claim 14 (depends on 1) The method of claim 1, further comprising: depositing the material on a plurality of substrates from a FOUP of substrates; and depositing the silicon oxide layer and the silicon nitride layer on the wall of the semiconductor processing chamber after the plurality of substrates from each FOUP in a plurality of FOUPs are processed. ### Claim 15 (depends on 1) The method of claim 1, wherein an average thickness of the material within 15 mm of an edge of the substrate is within 1% of a thickness of the material at the center of the substrate as a result of applying the second voltage at the second frequency to the pedestal while applying the first voltage at the first frequency to the showerhead.