# US 12,191,090 B2 · Solid electrolytic capacitor containing a sequential vapor-deposited dielectric film

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- Number: US 12,191,090 B2
- Document ID: US12191090B2
- Status: Granted
- Kind: B2
- Application number: 17/530,521
- Filed: 2021-11-19
- Published: 2022-03-10
- Granted: 2025-01-07
- Earliest claimed: 2018-11-29
- Assignees: KYOCERA AVX Components Corporation
- Applicants: KYOCERA AVX Components Corporation
- Inventors: Jan Petrzilek; Mitchell D. Weaver
- Web page: https://patentgrep.com/patent/US12191090B2

## CPC

- H01G 9/0032: {formation of the dielectric layer}
- H01G 9/012: specially adapted for solid capacitors
- H01G 9/025: Solid electrolytes (H01G11/54 takes precedence)
- H01G 9/042: characterised by the material (H01G11/22 takes precedence)
- H01G 9/0425: {specially adapted for cathode}
- H01G 9/052: Sintered electrodes
- H01G 9/07: Dielectric layers
- H01G 9/15: Solid electrolytic capacitors (H01G11/00 takes precedence)
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

A capacitor which can be reliably employed at high voltages is provided. More particularly, the capacitor comprises a solid electrolytic capacitor element that contains a sintered porous anode body, a dielectric film that is formed by sequential vapor deposition and overlies the anode body, and a solid electrolyte that overlies the dielectric film is provided.

## Claims

### Claim 1

A capacitor comprising a solid electrolytic capacitor element that contains a sintered porous anode body containing niobium or an oxide of niobium, a homogeneous dielectric film that consists essentially of an oxide of tantalum that is formed by sequential vapor deposition and overlies the anode body, wherein the dielectric film has a uniform thickness of from about 10 nanometers to about 1,000 nanometers, and a solid electrolyte that overlies the dielectric film.

### Claim 2 (depends on 1)

The capacitor of claim 1, wherein the dielectric film is formed by atomic layer deposition, molecular layer deposition, or a combination thereof.

### Claim 3 (depends on 1)

The capacitor of claim 1, wherein the dielectric film includes tantalum pentoxide.

### Claim 4 (depends on 3)

The capacitor of claim 3, wherein the vapor-deposited dielectric film is formed from a tantalum-containing precursor compound.

### Claim 5 (depends on 4)

The capacitor of claim 4, wherein the precursor compound is a tantalum halide.

### Claim 6 (depends on 4)

The capacitor of claim 4, wherein the precursor compound is a tantalum alkoxide, alkylamido tantalum compound, or a combination thereof.

### Claim 7 (depends on 1)

The capacitor of claim 1, wherein the sintered porous anode body includes tantalum, niobium oxide, or a combination thereof.

### Claim 8 (depends on 1)

The capacitor of claim 1, wherein the solid electrolyte includes manganese dioxide.

### Claim 9 (depends on 1)

The capacitor of claim 1, wherein the solid electrolyte includes a conductive polymer.

### Claim 10 (depends on 9)

The capacitor of claim 9, wherein the solid electrolyte contains a plurality of conductive polymer particles.

### Claim 11 (depends on 10)

The capacitor of claim 10, wherein the conductive polymer particles contain poly(3,4-ethylenedioxythiophene) or a derivative thereof.

### Claim 12 (depends on 10)

The capacitor of claim 10, wherein the conductive polymer particles also contain a polymeric counterion.

### Claim 13 (depends on 9)

The capacitor of claim 9, wherein the conductive polymer is an extrinsically conductive polymer.

### Claim 14 (depends on 13)

The capacitor of claim 13, wherein the extrinsically conductive polymer has repeating units of the following formula (I):
wherein,
R7 is a linear or branched, C1 to C18 alkyl radical, C5 to C12 cycloalkyl radical, C6 to C14 aryl radical, C7 to C18 aralkyl radical, or a combination thereof; and
q is an integer from 0 to 8.

### Claim 15 (depends on 9)

The capacitor of claim 9, wherein the conductive polymer is an intrinsically conductive polymer.

### Claim 16 (depends on 15)

The capacitor of claim 15, wherein the intrinsically conductive polymer has repeating units of the following formula (II):
wherein,
R is (CH2)a—O—(CH2)b-L, where L is a bond or HC([CH2]cH);
a is an integer from 0 to 10;
b is an integer from 1 to 18;
c is an integer from 0 to 10;
Z is an anion; and
X is a cation.

### Claim 17 (depends on 1)

The capacitor of claim 1, wherein the capacitor element further comprises a cathode coating that contains a metal particle layer that overlies the solid electrolyte, wherein the metal particle layer includes a plurality of conductive metal particles dispersed within a resinous polymer matrix.

### Claim 18 (depends on 1)

The capacitor of claim 1, further comprising an anode termination that is in electrical connection with the sintered porous anode body, a cathode termination that is in electrical connection with the solid electrolyte, and a housing that encapsulates the capacitor element and leaves exposed a mounting surface of the anode termination and the cathode termination.

### Claim 19 (depends on 1)

The capacitor of claim 1, wherein the entire dielectric film is formed by sequential vapor deposition.

### Claim 20 (depends on 1)

The capacitor of claim 1, wherein only a portion of the dielectric film is formed by sequential vapor deposition.

### Claim 21 (depends on 1)

The capacitor of claim 1, wherein the sintered porous anode body contains niobium (II) oxide.