# US 12,191,052 B2 · Dielectric high gradient insulator and method of manufacture

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- Number: US 12,191,052 B2
- Document ID: US12191052B2
- Status: Granted
- Kind: B2
- Application number: 17/633,595
- Filed: 2020-09-24
- Published: 2022-09-15
- Granted: 2025-01-07
- Earliest claimed: 2020-09-24
- Assignees: Rafael Advanced Defense Systems Ltd.
- Applicants: Rafael Advanced Defense Systems Ltd.
- Inventors: Shai Zamir; Michal Sakajio
- Web page: https://patentgrep.com/patent/US12191052B2

## CPC

- H01B 3/10: metallic oxides (ceramics H01B3/12)
- H01B 3/002: {Inhomogeneous material in general}
- H01B 3/12: ceramics
- H05H 7/14: Vacuum chambers (H05H5/03 takes precedence)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS

## Abstract

A dielectric high gradient insulator device comprises a stack of at least two dielectric layers which are in physical contact with each other and which have different dielectric constants. At least two dielectric layers are configured to form a shaped electric field, when the device is placed between electrodes having a voltage difference. The shaped electric field is in a region proximal to a surface of the at least two dielectric layers, and causes deflection of negatively charged particles away from the surface, thereby inhibiting voltage breakdown of the device. A method of manufacturing the device is also presented.

## Claims

### Claim 1

A dielectric high gradient insulator device comprising
a stack of more than two dielectric layers aligned along a longitudinal axis
and having different values of dielectric constant which are arranged in an alternating structure;
at least one of the dielectric layers having a stepwise variation in dielectric constant;
the layers configured to form a shaped electric field, when the device is placed between electrodes having a voltage difference;
the shaped electric field being in a region proximal to a surface of the at least two layers, and deflecting negatively charged particles away from said surface;
thereby inhibiting voltage breakdown of the device.

### Claim 2 (depends on 1)

The device of claim 1 wherein a surface of said dielectric layers comprises a material having a secondary electron emission yield less than unity.

### Claim 3 (depends on 1)

The device of claim 1 wherein at least one dielectric layer comprises a low dielectric material selected from a group consisting of alumina (Al2O3), aluminum nitride (AlN), silicon dioxide (SiO2), silicon nitride (Si3N4), titanium dioxide (TiO2), polyamide, polystyrene, polyethylene, polyvinyl chloride (PVC), and plexiglass (Polymethyl methacrylate).

### Claim 4 (depends on 1)

The device of claim 1 wherein at least one dielectric layer comprises a dielectric material selected from a group consisting of BaTiO3, PbTiO3, LaTiO3, SrTiO3, doped NiO, CaCu3Ti4O12, doped TiO2 or αFe0.5β0.5O3, where α represents the elements Ba, Sr, or Ca and β represents the elements Nb, Ta, or Sb.

### Claim 5 (depends on 1)

The device of claim 1 wherein at least one dielectric layer comprises metallic particles.

### Claim 6 (depends on 1)

The device of claim 1 wherein said device is a component of a charged particle accelerator, a charged plasma source, an X-ray generating machine, or a pulsed power system.

### Claim 7 (depends on 1)

The device of claim 1 wherein the different values of dielectric constant have a maximum value and a minimum value whose ratio is at least an order of magnitude.