Methods and systems for controlling crystal growth

A system for controlling crystal growth, comprising:

• at least one storage storing computer instructions;
• at least one processor in communication with the at least one storage, when executing the computer instructions, the at least one processor causes the system to:
• obtain an actual crystal parameter in a target time slice, wherein the actual crystal parameter includes at least one of an actual crystal mass, an actual crystal diameter, an actual crystal height, or an actual crystal shape;
• obtain a reference crystal parameter in the target time slice, wherein the reference crystal parameter includes at least one of a reference crystal mass, a reference crystal diameter, a reference crystal height, or a reference crystal shape, and wherein to obtain the reference crystal parameter in the target time slice, the at least one processor causes the system to:
• construct a crystal growth model based on a preset crystal parameter and a preset crystal growth parameter, and at least one of parameters involved in a crystal growth process including an internal stress, an internal defect, an internal component distribution, a continuity of different crystal growth stages, wherein the crystal growth model characterizes a theoretical growth condition of the crystal in an entire growth process;
• and
• determine the reference crystal parameter corresponding to the target time slice based on the crystal growth model;
• determine a temperature control parameter based on the actual crystal parameter and the reference crystal parameter;
• determine a pulling control parameter based on the actual crystal parameter and the reference crystal parameter;
• and
• adjust a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter;
• wherein the at least one processor further causes the system to:
• obtain a real-time image during a process of dropping the seed crystal;
• compare the real-time image with a preset reference image, including:
• divide the preset reference image and the real-time image into a plurality of corresponding regions, respectively;
• for each region, compare real-time image information with corresponding preset reference image information to determine a similarity, the image information including at least one of a size of a meniscus, a brightness of the meniscus, a size of a meniscus aperture, or a flow range of a flow line of a raw material liquid;
• in response to that the similarity is greater than a preset similarity threshold, determine that there is no need to adjust the heating parameter;
• and
• in response to that the similarity is less than or equal to the preset similarity threshold, adjust the heating parameter.

A computer-readable storage medium, wherein the storage medium stores computer instructions, the instructions, when executed by at least one processor, causing the at least one processor to perform operations including:

• obtaining an actual crystal parameter in a target time slice, wherein the actual crystal parameter includes at least one of an actual crystal mass, an actual crystal diameter, an actual crystal height, or an actual crystal shape;
• obtaining a reference crystal parameter in the target time slice, wherein the reference crystal parameter includes at least one of a reference crystal mass, a reference crystal diameter, a reference crystal height, or a reference crystal shape, wherein the obtaining a reference crystal parameter in the target time slice comprises:
• constructing a crystal growth model based on a preset crystal parameter and a preset crystal growth parameter, and at least one of parameters involved in a crystal growth process including an internal stress, an internal defect, an internal component distribution, a continuity of different crystal growth stages, wherein the crystal growth model characterizes a theoretical growth condition of the crystal in an entire growth process;
• and
• determining the reference crystal parameter corresponding to the target time slice based on the crystal growth model;
• determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter;
• determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter;
• and
• adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter;
• wherein the instructions, when executed by at least one processor, causing the at least one processor to perform further operations including:
• obtaining a real-time image during a process of dropping the seed crystal;
• comparing the real-time image with a preset reference image, including:
• dividing the preset reference image and the real-time image into a plurality of corresponding regions, respectively;
• for each region, comparing real-time image information with corresponding preset reference image information to determine a similarity, the image information including at least one of a size of a meniscus, a brightness of the meniscus, a size of a meniscus aperture, or a flow range of a flow line of a raw material liquid;
• in response to that the similarity is greater than a preset similarity threshold, determining that there is no need to adjust the heating parameter;
• and
• in response to that the similarity is less than or equal to the preset similarity threshold, adjusting the heating parameter.