# US 12,184,331 B2 · High speed and multi-contact LEDs for data communication

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- Number: US 12,184,331 B2
- Document ID: US12184331B2
- Status: Granted
- Kind: B2
- Application number: 18/465,924
- Filed: 2023-09-12
- Published: 2024-02-29
- Granted: 2024-12-31
- Earliest claimed: 2019-11-18
- Assignees: AvicenaTech, Corp.
- Applicants: AvicenaTech Corp.
- Inventors: Bardia Pezeshki; Robert Kalman; Alex Tselikov
- Web page: https://patentgrep.com/patent/US12184331B2

## CPC

- H04B 10/116: Visible light communication
- H10W 90/00: Package configurations
- H04B 10/502: {LED transmitters}
- H04B 10/801: {using optical interconnects, e.g. light coupled isolators, circuit board interconnections}
- H04B 10/803: {Free space interconnects, e.g. between circuit boards or chips}
- H10H 20/062: {Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors}
- H10H 20/81: Bodies
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H04B: TRANSMISSION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

An LED may have structures optimized for speed of operation of the LED. The LED may be a microLED. The LED may have a p-doped region with one or more quantum wells instead of an intrinsic region. The LED may have etched vias therethrough.

## Claims

### Claim 1

An optical communication system for communicating information provided by a processor to another area of the processor or another chip in a multi-chip module, comprising:
an LED associated with the processor;
an LED driver to modulate optical output power of the LED, such that the LED will generate light based on data provided to the LED driver from the processor;
a detector for performing optical-electrical conversion using the light; and
an optical waveguide optically coupling light from the LED to the detector;
wherein the LED is mounted on a surface, the LED having a structure comprising:
a p type layer having a p contact for electrical contacting;
an n type layer having an n contact for electrical contacting;
an intermediate region between the p type layer and the n type layer, the intermediate region being doped and including at least one quantum well, the at least one quantum well located physically closer to the p type layer than the n type layer;
wherein the structure of the LED is a lateral structure such that the p contact and the n contact both contact the surface that the LED is mounted on.

### Claim 2 (depends on 1)

The system of claim 1, wherein the intermediate region comprises p− doping.

### Claim 3 (depends on 2)

The system of claim 2, wherein the p− doping is in the range of 1016/cm3 to 1017/cm3.

### Claim 4 (depends on 1)

The system of claim 1, wherein the intermediate region comprises n− doping.

### Claim 5 (depends on 1)

The system of claim 1, wherein the LED is a microLED.

### Claim 6 (depends on 5)

The system of claim 5, wherein the at least one quantum well has a width ranging between 1 nanometer to 3 nanometers.

### Claim 7 (depends on 5)

The system of claim 5, wherein the microLED has a diameter size ranging between 0.3 micrometers to 2 micrometers.

### Claim 8 (depends on 1)

The system of claim 1, wherein the p type layer and the n type layer are comprised of GaN and the at least one quantum well comprises InGaN.

### Claim 9 (depends on 1)

The system of claim 1, further comprising:
a further LED associated with the other area of the processor or other chip in the multi-chip module;
a further LED driver to modulate optical output power of the further LED, such that the further LED will generate light based on data provided to the further LED driver from the other area of the processor or other chip in the multi-chip module; and
a further detector for performing optical-electrical conversion using the light from the further LED;
wherein the further LED comprises:
a p type layer;
an n type layer;
an intermediate region between the p type layer and the n type layer, the intermediate region being doped and including at least one quantum well, the at least one quantum well located physically closer to the p type layer than the n type layer.

### Claim 10 (depends on 9)

The system of claim 9, wherein the optical waveguide optically couples light from the further LED to the further detector.

### Claim 11 (depends on 1)

The system of claim 1, wherein the at least one quantum well is between 1 and 3 quantum wells.