# US 12,184,265 B2 · Resonator package and method of manufacturing the same

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- Number: US 12,184,265 B2
- Document ID: US12184265B2
- Status: Granted
- Kind: B2
- Application number: 16/292,715
- Filed: 2019-03-05
- Published: 2019-06-27
- Granted: 2024-12-31
- Earliest claimed: 2015-05-21
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Tae Yoon Kim; Yeong Gyu Lee; Moon Chul Lee; Jae Chang Lee; Duck Hwan Kim
- Web page: https://patentgrep.com/patent/US12184265B2

## CPC

- H03H 9/131: {consisting of a multilayered structure}
- H03H 3/02: for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence)
- H03H 9/1007: {for bulk acoustic wave [BAW] devices}
- Y10T 29/42: Piezoelectric device making
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.

## Claims

### Claim 1

A method of manufacturing a resonator package, the method comprising:
etching a lower electrode with a hardmask into at least two portions having different thicknesses;
depositing a dielectric layer on the etched lower electrode on the at least two portions with different thicknesses,
wherein only a portion of an upper surface of the lower electrode is etched to shape the lower electrode to have the at least two portions with different thicknesses, and
wherein the etching of the lower electrode comprises:
performing a first hardmask etching process on the hardmask provided on the upper surface of the lower electrode to obtain a first etched hardmask;
performing a first electrode etching process on the lower electrode using the first etched hardmask such that only a portion of the upper surface of the lower electrode is etched;
performing a second hardmask etching process on the first etched hardmask to obtain a second etched hardmask; and
performing a second electrode etching process on the first etched lower electrode using the second etched hardmask.

### Claim 2 (depends on 1)

The method of claim 1, wherein the lower electrode is etched at least twice with the hardmask patterned into at least two shapes.

### Claim 3 (depends on 1)

The method of claim 1, wherein the performing of the first hardmask etching process on the hardmask and the performing of the second hardmask etching process on the first etched hardmask are performed using a first etching gas that does not etch the lower electrode and etches only the hardmask.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first electrode etching process and the second electrode etching process are performed using a second etching gas that does not etch the hardmask and etches only the lower electrode.

### Claim 5 (depends on 1)

The method of claim 1, wherein during the first hardmask etching process and the second hardmask etching process, the hardmask is patterned by a soft mask provided on the hardmask.

### Claim 6 (depends on 1)

The method of claim 1, wherein, during the etching of the lower electrode, the lower electrode is etched by performing at least two dry etching operations with the hardmask patterned in at least two different shapes.

### Claim 7

A method of manufacturing a resonator package, the method comprising:
disposing an insulating layer on a substrate;
disposing a piezoelectric layer on the insulating layer;
disposing a lower electrode comprising two portions having different thicknesses directly on an upper surface of the piezoelectric layer,
disposing a dielectric layer directly on an upper surface of the lower electrode and directly on a sidewall of the lower electrode; and
disposing an upper electrode directly on an upper surface of the dielectric layer,
wherein the disposing of the lower electrode comprises etching the lower electrode with a hardmask patterned into two different shapes so that the upper surface of the lower electrode is etched to shape the two portions of the lower electrode having different thicknesses, and
the etching of the lower electrode comprises:
performing a first hardmask etching process on a hardmask disposed on the upper surface of the lower electrode to obtain a first etched hardmask;
performing a first electrode etching process on the lower electrode using the first etched hardmask so that only a portion of the upper surface of the lower electrode is etched;
performing a second hardmask etching process on the first etched hardmask to obtain a second etched hardmask; and
performing a second electrode etching process on the first etched lower electrode using the second etched hardmask.

### Claim 8 (depends on 7)

The method of claim 7, wherein the performing of the first hardmask etching process on the hardmask and the performing of the second hardmask etching process on the first etched hardmask are performed using a first etching gas that does not etch the lower electrode and etches only the hardmask.

### Claim 9 (depends on 7)

The method of claim 7, wherein the first electrode etching process and the second electrode etching process are performed using a second etching gas that does not etch the hardmask and etches only the lower electrode.

### Claim 10 (depends on 7)

The method of claim 7, wherein during the first hardmask etching process and the second hardmask etching process, the hardmask is patterned by a soft mask disposed on the hardmask.

### Claim 11 (depends on 7)

The method of claim 7, wherein during the etching of the lower electrode, the lower electrode is etched by performing at least two dry etching operations with the hardmask patterned into two different shapes.

### Claim 12 (depends on 7)

The method of claim 7, wherein the first hardmask etching process, the first electrode etching process, the second hardmask etching process, the second electrode etching process, the disposing of the dielectric layer directly on the upper surface of the lower electrode and directly on the sidewall of the lower electrode, and the disposing of the upper electrode directly on the upper surface of the dielectric layer are performed in this order.

### Claim 13 (depends on 7)

The method of claim 7, wherein an upper surface of a thinner portion of the two portions of the first electrode is substantially parallel to an upper surface of a thicker portion of the two portions of the first electrode.