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US 12,184,259 B2Granted
Etching and thinning for the fabrication of lithographically patterned diamond nanostructures
AssigneeUniversity of Oregon
InventorsIgnas Lekavicius, Hailin Wang
Life of this patent
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Abstract
A back side of a diamond or other substrate is thinned using plasma etches and a mask situated away from the back side by a spacer having a thickness between 50 μm and 250 μm. Typically, a combined RIE/ICP etch is used to thin the substrate from 20-40 μm to less than 1 μm. For applications in which color centers are implanted or otherwise situated on a front side of the diamond substrate, after thinning, a soft graded etch is applied to reduce color center linewidth, particularly for nitrogen vacancy (NV) color centers.
Claims15
A method of thinning a device substrate, comprising:
- situating a mask substrate to be displaced from and facing a back side of the device substrate, the mask substrate defining an aperture corresponding to an area of the back side of the device substrate to be thinned;
- exposing the back side of the device substrate to an etch through the aperture defined in the mask substrate, wherein the device substrate is a diamond substrate;
- defining a phononic crystal on a front side on the diamond substrate;
- and
- defining a plurality of surface mechanical resonators (SMRs) on the front side of the diamond substrate, the SMRs including one or more color centers.
2 more elements
Dependencies are inferred from the claim text.