# US 12,184,227 B2 · Half-cell assembly > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,184,227 B2 - Document ID: US12184227B2 - Status: Granted - Kind: B2 - Application number: 18/255,033 - Filed: 2022-01-29 - Published: 2024-02-15 - Granted: 2024-12-31 - Earliest claimed: 2021-05-19 - Assignees: Tongwei Solar (Hefei) Co., Ltd. - Applicants: Tongwei Solar (Hefei) Co., Ltd. - Inventors: Lingxiang Wang; Linlin Gui; Jie Song; Dongsheng Li; Fushen Zhou; Yan Li - Web page: https://patentgrep.com/patent/US12184227B2 ## CPC - H02S 40/34: comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes - H10F 19/00: Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules - H10F 19/902: {for series or parallel connection of photovoltaic cells} - G05F 1/67: to the maximum power available from a generator, e.g. from solar cell - G05F 5/00: Systems for regulating electric variables by detecting deviations in the electric input to the system and thereby controlling a device within the system to obtain a regulated output - H02J 1/108: having arrangements for blocking reverse current flow, e.g. using diodes (H02J1/12 takes precedence) - H10F 19/90: Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers (between thin-film photovoltaic cells on a single substrate H10F19/35) - Y02E 10/50: Photovoltaic [PV] energy - H02S: GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H1/12; light sensitive inorganic semiconductor devices H10F; light sensitive organic semiconductor devices H10K30/00; thermoelectric devices H10N10/00; pyroelectric devices H10N15/00) - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - G05F: SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES - H02J: ELECTRIC POWER NETWORKS; CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A half-cell assembly includes an integrated junction box and multiple cell string sets connected in series sequentially. Each cell string set includes multiple cell strings connected in parallel, and each cell string includes multiple half-cells connected in series sequentially. The multiple cell string sets are arranged along a first preset direction. In each cell string set, the multiple cell strings are arranged along the first preset direction. In each cell string, the multiple half-cells are arranged along a second preset direction. One of the first preset direction and the second preset direction is the long side direction of the half-cell, and the other is the short side direction of the half-cell. The integrated junction box and the multiple cell string sets are arranged along the second preset direction. The multiple cell string sets are connected in parallel with diodes of the integrated junction box. ## Claims ### Claim 1 A half-cell assembly, comprising: multiple cell string sets connected in series sequentially, each cell string set comprising multiple cell strings connected in parallel, and each cell string comprising multiple half-cells connected in series sequentially; the multiple cell string sets being arranged along a first preset direction; in each cell string set, the multiple cell strings being arranged along the first preset direction; in each cell string, the multiple half-cells being arranged along a second preset direction; one of the first preset direction and the second preset direction being a long side direction of the half-cell, and the other is a short side direction of the half-cell; and an integrated junction box, wherein the integrated junction box and the multiple cell string sets are arranged along the second preset direction, and the multiple cell string sets are connected in parallel with diodes of the integrated junction box, respectively, wherein the integrated junction box further comprises a power supply module, a sampling module, a control module, a driving module, a control switch, and a switching diode; wherein the diode, the power supply module and the sampling module are connected in parallel, and the diode, the power supply module and the sampling module are connected with the control switch and the sampling module in series, respectively; an input end of the control module is electrically connected to the sampling module, an output end of the control module is electrically connected to the driving module, and the driving module is electrically connected to the control switch, so that the control module is capable of controlling the driving module to turn on and turn off the control switch according to signals from the sampling module. ### Claim 2 (depends on 1) The half-cell assembly according to claim 1, wherein the first preset direction and the second preset direction are perpendicular to each other. ### Claim 3 (depends on 1) The half-cell assembly according to claim 1, wherein a quantity of the diodes in the integrated junction box is M, M is an integer greater than or equal to 3, and the M diodes are arranged along the first preset direction; wherein the multiple cell string sets are divided into M cell string units in a series connection direction of the multiple cell string sets; wherein the M diodes and the M cell string units are in sequential one-to-one correspondence in the series connection direction, and each of the cell string units is sequentially connected in parallel with one of the diodes. ### Claim 4 (depends on 3) The half-cell assembly according to claim 3, wherein a quantity of the diodes in the integrated junction box is 3. ### Claim 5 (depends on 3) The half-cell assembly according to claim 3, wherein each diode comprises an anode terminal and a cathode terminal, and two ends of the corresponding cell string unit are respectively connected to the anode terminal and the cathode terminal, so as to achieve a parallel connection with the diode. ### Claim 6 (depends on 3) The half-cell assembly according to claim 3, wherein in each of the cell string units, a quantity of the cell string sets is even. ### Claim 7 (depends on 1) The half-cell assembly according to claim 1, wherein the second preset direction is the long side direction of the half-cell, and the long side direction of the half-cell is parallel to an extension direction of busbars of the half-cell. ### Claim 8 (depends on 7) The half-cell assembly according to claim 7, wherein a quantity of the busbars in each half-cell is 2 to 6. ### Claim 9 (depends on 7) The half-cell assembly according to claim 7, wherein, in each cell string, a quantity of the half-cells is 10 or 12. ### Claim 10 (depends on 1) The half-cell assembly according to claim 1, wherein, in each cell string set, a quantity of the cell strings is 2. ### Claim 11 (depends on 1) The half-cell assembly according to claim 1, wherein, in the half-cell assembly, a quantity of the cell string sets is 6. ### Claim 12 (depends on 1) The half-cell assembly according to claim 1, wherein the half-cell is a crystalline silicon cell. ### Claim 13 (depends on 12) The half-cell assembly according to claim 12, wherein the half-cell is a P-type polycrystalline silicon cell, a P-type monocrystalline silicon cell, an N-type polycrystalline silicon cell, or an N-type monocrystalline silicon cell; or the half-cell is a high-efficiency Passivated Emitter and Rear Cell, an N-type cell, a Heterojunction with Intrinsic Thin-Layer cell, or a Multi Busbar cell. ### Claim 14 (depends on 3) The half-cell assembly according to claim 3, wherein a quantity of the cell string sets is the same in different cell string units.