# US 12,183,866 B2 · Display device using micro LED, and manufacturing method therefor

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- Number: US 12,183,866 B2
- Document ID: US12183866B2
- Status: Granted
- Kind: B2
- Application number: 17/623,855
- Filed: 2019-07-19
- Published: 2022-11-17
- Granted: 2024-12-31
- Earliest claimed: 2019-07-19
- Assignees: LG Electronics Inc.
- Applicants: LG Electronics Inc.
- Inventors: Hwanjoon Choi; Kyoungtae Wi
- Web page: https://patentgrep.com/patent/US12183866B2

## CPC

- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/853: characterised by their shape
- H10H 20/856: Reflecting means
- H10W 72/072: {of bump connectors}
- H10W 90/00: Package configurations
- H10H 20/018: {Bonding of wafers}
- H10H 20/034: {of coatings}
- H10H 20/0364: {of interconnections}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10W 72/0198: {batch processes}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07304: {the auxiliary member being temporary, e.g. a sacrificial coating}
- H10W 72/07307: {the auxiliary member being a temporary substrate, e.g. a removable substrate}
- H10W 72/07332: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07337: {using a polymer adhesive, e.g. an adhesive based on silicone or epoxy}
- H10W 72/07338: {hardening the adhesive by curing, e.g. thermosetting}
- H10W 72/07352: {changes in structures or sizes}
- H10W 72/074: {of anisotropic conductive adhesives}
- H10W 72/227: {Multiple bumps having different sizes}
- H10W 72/251: {Materials}
- H10W 72/321: {Structures or relative sizes of die-attach connectors}
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/351: {Materials of die-attach connectors}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/353: {not comprising solid metals or solid metalloids, e.g. ceramics}
- H10W 72/354: {comprising polymers}
- H10W 72/951: {Materials of bond pads}
- H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.

## Claims

### Claim 1

A display device, comprising:
a substrate;
an organic pad positioned above the substrate;
a wiring electrode positioned on the organic pad, wherein the organic pad has a rough surface on which the wiring electrode is formed;
an anisotropy conductive adhesive paste layer having conductive particles and positioned on the wiring electrode;
a semiconductor light emitting element positioned on the anisotropy conductive adhesive paste layer and electrically connected to the wiring electrode by the conductive particles of the anisotropy conductive adhesive paste layer; and
a protective layer provided at an upper surface of the semiconductor light emitting element and not connected to the wiring electrode,
wherein the organic pad comprises a plurality of nanoparticles, wherein at least one nanoparticle among the plurality of nanoparticles is exposed at the rough surface of the organic pad.

### Claim 2 (depends on 1)

The display device of claim 1, wherein the semiconductor light emitting element has a horizontal-type semiconductor light emitting structure comprising:
a first conductive semiconductor layer;
an active layer;
a second conductive semiconductor layer;
a first conductive electrode positioned on the first conductive semiconductor layer; and
a second conductive electrode positioned such that the second conductive semiconductor layer is exposed based on partial etching of the first conductive semiconductor layer and the active layer.

### Claim 3 (depends on 2)

The display device of claim 2, wherein the second conductive semiconductor layer of the semiconductor light emitting element is in contact with the protective layer, and
wherein the first conductive electrode and the second conductive electrode of the semiconductor light emitting element are in contact with the anisotropy conductive adhesive paste layer.

### Claim 4 (depends on 3)

The display device of claim 3, wherein the protective layer extends further laterally than at least one side of the second conductive semiconductor layer.

### Claim 5 (depends on 1)

The display device of claim 1, wherein the protective layer is made of ultraviolet (UV) resin or thermosetting resin.

### Claim 6 (depends on 1)

The display device of claim 1, wherein a first refractive index of the protective layer is less than a second refractive index of the semiconductor light emitting element.

### Claim 7 (depends on 6)

The display device of claim 6, where the first refractive index is in a range of 1.5 and 2.3.

### Claim 8 (depends on 1)

The display device of claim 1, wherein the semiconductor light emitting element is a light emitting diode (LED) with a size in micrometers.

### Claim 9 (depends on 1)

The display device of claim 1, wherein the wiring electrode has a rough surface.

### Claim 10 (depends on 1)

The display device of claim 1, wherein the nanoparticles reflect emitted light directed to the wiring substrate for improving light extraction efficiency.