# US 12,183,850 B2 · Micro-LED structure and micro-LED chip including same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,850 B2 - Document ID: US12183850B2 - Status: Granted - Kind: B2 - Application number: 17/646,026 - Filed: 2021-12-27 - Published: 2022-06-30 - Granted: 2024-12-31 - Earliest claimed: 2020-12-28 - Assignees: Jade Bird Display (Shanghai) Limited - Applicants: Jade Bird Display (Shanghai) Limited - Inventors: Qiming Li; Yuankun Zhu; Anle Fang; Deshuai Liu - Web page: https://patentgrep.com/patent/US12183850B2 ## CPC - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/81: Bodies - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors - H10H 20/8162: {Current-blocking structures} - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/831: characterised by their shape - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/851: Wavelength conversion means - H10H 20/855: Optical field-shaping means, e.g. lenses - H10H 20/856: Reflecting means - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 29/14: comprising multiple light-emitting semiconductor components - H10W 90/00: Package configurations - H10H 20/83: Electrodes - H10H 20/853: characterised by their shape - H10H 29/8325: {Reflective materials} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs. ## Claims ### Claim 1 A micro-LED chip including multiple micro-LEDs, wherein, at least one micro-LED of the multiple micro-LEDs comprises: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, wherein the light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer, the micro-LED chip further comprises: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer, wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs, wherein at least a portion of the isolation structure is formed in the light emitting layer, a bottom surface of the isolation structure is under the light emitting layer and above a bottom surface of the bottom spacer, and a top surface of the isolation structure is aligned with a top surface of the top spacer. ### Claim 2 (depends on 1) The micro-LED chip according to claim 1, wherein a top surface area of the isolation structure is equal to a bottom surface area of the isolation structure. ### Claim 3 (depends on 1) The micro-LED chip according to claim 1, wherein a top surface area of the isolation structure is larger than a bottom surface area of the isolation structure. ### Claim 4 (depends on 1) The micro-LED chip according to claim 1, wherein a top surface area of the isolation structure is smaller than a bottom surface area of the isolation structure. ### Claim 5 (depends on 4) The micro-LED chip according to claim 4, wherein a cross-sectional area of the isolation structure at a bottom of the light emitting layer is larger than the bottom surface area of the isolation structure. ### Claim 6 (depends on 1) The micro-LED chip according to claim 1, wherein the isolation structure is made of a light absorption material. ### Claim 7 (depends on 1) The micro-LED chip according to claim 1, wherein the isolation structure is made of a reflective material. ### Claim 8 (depends on 1) The micro-LED chip according to claim 1, wherein a top area of the first type conductive layer is larger than a bottom area of the first type conductive layer, and a top area of the second type conductive layer is smaller than a bottom area of the second type conductive layer. ### Claim 9 (depends on 1) The micro-LED chip according to claim 1, wherein the light emitting layer includes only one pair of quantum well layers, or multiple pairs of quantum well layers. ### Claim 10 (depends on 1) The micro-LED chip according to claim 1, wherein a thickness of the top spacer is larger than a thickness of the light emitting layer, and a thickness of the bottom spacer is larger than the thickness of the light emitting layer. ### Claim 11 (depends on 1) The micro-LED chip according to claim 1, wherein the at least one micro-LED further comprises a reflective structure formed surrounding the first type conductive layer. ### Claim 12 (depends on 11) The micro-LED chip according to claim 11, wherein, in the at least one micro-LED, the reflective structure is configured to focus light on the second type conductive layer. ### Claim 13 (depends on 11) The micro-LED chip according to claim 11, wherein, in the at least one micro-LED, the reflective structure is attached on a sidewall of the first type conductive layer, and the at least one micro-LED further comprises a bottom connection structure formed under the first type conductive layer and electrically connected with the first type conductive layer. ### Claim 14 (depends on 13) The micro-LED chip according to claim 13, wherein the reflective structure on the sidewall of the first type conductive layer has a curved surface. ### Claim 15 (depends on 13) The micro-LED chip according to claim 13, wherein the reflective structure is attached both on the sidewall and a bottom surface of the first type conductive layer. ### Claim 16 (depends on 13) The micro-LED chip according to claim 13, wherein the reflective structure at the sidewall of the first type conductive layer is made of an ODR (omnidirectional reflector) structure or a DBR (distributed bragg reflection) structure. ### Claim 17 (depends on 13) The micro-LED chip according to claim 13, further comprising a substrate under the first type conductive layer, and electrically connected with the bottom connection structure by a connecting pad in the substrate. ### Claim 18 (depends on 17) The micro-LED chip according to claim 17, wherein the reflective structure on the sidewall of the first type conductive layer is inclined relative to a surface of the substrate, and an inclined angle of the reflective structure is approximately 30° to approximately 75° relative to the surface of the substrate. ### Claim 19 (depends on 1) The micro-LED chip according to claim 1, wherein the at least one micro-LED further comprises: a reflective structure attached on a bottom surface of the first type conductive layer. ### Claim 20 (depends on 1) The micro-LED chip according to claim 1, further comprising, in the at least one micro-LED, a microlens formed on the second type conductive layer and on a top surface of the top spacer.