# US 12,183,849 B2 · Micro-LED structure and micro-LED chip including same

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- Number: US 12,183,849 B2
- Document ID: US12183849B2
- Status: Granted
- Kind: B2
- Application number: 17/562,355
- Filed: 2021-12-27
- Published: 2022-06-30
- Granted: 2024-12-31
- Earliest claimed: 2020-12-28
- Assignees: Jade Bird Display (Shanghai) Limited
- Applicants: Jade Bird Display (Shanghai) Limited
- Inventors: Qiming Li; Yuankun Zhu; Anle Fang; Deshuai Liu
- Web page: https://patentgrep.com/patent/US12183849B2

## CPC

- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/81: Bodies
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors
- H10H 20/8162: {Current-blocking structures}
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H 20/831: characterised by their shape
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/851: Wavelength conversion means
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/856: Reflecting means
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30)
- H10H 29/14: comprising multiple light-emitting semiconductor components
- H10W 90/00: Package configurations
- H10H 20/83: Electrodes
- H10H 20/853: characterised by their shape
- H10H 29/8325: {Reflective materials}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by an edge of the second type conductive layer.

## Claims

### Claim 1

A micro-light emitting diode (micro-LED) chip including multiple micro-LEDs, wherein,
at least one micro-LED of the multiple micro-LEDs comprises:
a first type conductive layer;
a second type conductive layer stacked on the first type conductive layer; and
a light emitting layer formed between the first type conductive layer and the second type conductive layer,
wherein the light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer,
wherein a profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by an edge of the second type conductive layer, and
wherein an edge of the light emitting layer is not vertically aligned with an edge of the first type conductive layer and an edge of the second type conductive layer.

### Claim 2 (depends on 1)

The micro-LED chip according to claim 1, further comprising:
a top spacer formed on a top surface of the light emitting layer;
a bottom spacer formed on a bottom surface of the light emitting layer,
wherein an edge of the top spacer is aligned with an edge of the light emitting layer, and
an edge of the bottom spacer is aligned with the edge of the light emitting layer.

### Claim 3 (depends on 2)

The micro-LED chip according to claim 2, wherein a thickness of the top spacer is larger than a thickness of the light emitting layer, and a thickness of the bottom spacer is larger than the thickness of the light emitting layer.

### Claim 4 (depends on 2)

The micro-LED chip according to claim 2, further comprising, in the at least one micro-LED, a microlens formed on the second type conductive layer and on a top surface of the top spacer.

### Claim 5 (depends on 1)

The micro-LED chip according to claim 1, wherein a top area of the first type conductive layer is larger than a bottom area of the first type conductive layer, and a top area of the second type conductive layer is smaller than a bottom area of the second type conductive layer.

### Claim 6 (depends on 1)

The micro-LED chip according to claim 1, wherein the light emitting layer includes only one pair of quantum well layers, or multiple pairs of quantum well layers.

### Claim 7 (depends on 1)

The micro-LED chip according to claim 1, wherein the at least one micro-LED further comprises a reflective structure formed surrounding the first type conductive layer.

### Claim 8 (depends on 7)

The micro-LED chip according to claim 7, wherein, in the at least one micro-LED, the reflective structure is attached on a sidewall of the first type conductive layer, and
the at least one micro-LED further comprises a bottom connection structure formed under the first type conductive layer and electrically connected with the first type conductive layer.

### Claim 9 (depends on 8)

The micro-LED chip according to claim 8, further comprising a substrate under the first type conductive layer, and electrically connected with the bottom connection structure by a connecting pad in the substrate.

### Claim 10 (depends on 9)

The micro-LED chip according to claim 9, wherein the substrate includes an integrated circuit (IC) circuit.

### Claim 11 (depends on 9)

The micro-LED chip according to claim 9, wherein the reflective structure on the sidewall of the first type conductive layer is inclined relative to a surface of the substrate, and an inclined angle of the reflective structure is approximately 30° to approximately 75° relative to the surface of the substrate.

### Claim 12 (depends on 8)

The micro-LED chip according to claim 8, wherein the bottom connection structure is made of a reflective and electrically conductive material.

### Claim 13 (depends on 8)

The micro-LED chip according to claim 8, wherein the reflective structure on the sidewall of the first type conductive layer has a curved surface.

### Claim 14 (depends on 8)

The micro-LED chip according to claim 8, wherein the reflective structure at the sidewall of the first type conductive layer is made of an ODR (omnidirectional reflector) structure or a DBR (distributed bragg reflection) structure.

### Claim 15 (depends on 7)

The micro-LED chip according to claim 7, wherein the reflective structure is configured to focus light on the second type conductive layer.

### Claim 16 (depends on 7)

The micro-LED chip according to claim 7, wherein the reflective structure is attached both on a sidewall surface and a bottom surface of the first type conductive layer.

### Claim 17 (depends on 16)

The micro-LED chip according to claim 16, wherein the reflective structure on the bottom surface of the first type conductive layer is electrically conductive, and
the micro-LED chip further comprises a bottom connection structure formed at the bottom of the reflective structure and electrically connected with the reflective structure.

### Claim 18 (depends on 1)

The micro-LED chip according to claim 1, wherein the at least one micro-LED further comprises:
a reflective structure attached on a bottom surface of the first type conductive layer.

### Claim 19 (depends on 18)

The micro-LED chip according to claim 18, wherein the reflective structure is electrically conductive, and
the at least one micro-LED further comprises a bottom connection structure formed at the bottom of the reflective structure and electrically connected with the reflective structure.

### Claim 20 (depends on 1)

The micro-LED chip according to claim 1, further comprising, in the at least one micro-LED, an isolation layer formed surrounding the first type conductive layer and under the light emitting layer, the isolation layer being made of a light absorption material.