# US 12,183,847 B2 · Method for manufacturing supporting substrate for semiconductor light-emitting device

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- Number: US 12,183,847 B2
- Document ID: US12183847B2
- Status: Granted
- Kind: B2
- Application number: 17/621,402
- Filed: 2020-06-24
- Published: 2022-11-10
- Granted: 2024-12-31
- Earliest claimed: 2019-06-24
- Assignees: Wavelord Co., Ltd
- Applicants: Wavelord Co., Ltd
- Inventors: June O Song
- Web page: https://patentgrep.com/patent/US12183847B2

## CPC

- H10H 20/018: {Bonding of wafers}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/858: Means for heat extraction or cooling
- H10H 20/0364: {of interconnections}
- H10H 20/0365: {of means for heat extraction or cooling}
- H10H 20/8585: {being an interconnection}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Disclosed is a method for manufacturing a supporting substrate for a semiconductor light emitting device, the method including: preparing a substrate having a groove; introducing a material into the groove of the substrate, the material serving to form a thermal and/or electrical pass; and compressing the material inwards from both ends of the groove, using a compressing means.

## Claims

### Claim 1

A method for manufacturing a supporting substrate for a semiconductor light emitting device, comprising:
preparing a substrate having a groove;
forming a metal layer on an upper side of the substrate and only within the groove to enhance adhesion and to form an electrical pass;
introducing a material into the groove of the substrate where the metal layer is formed inside, the material serving to form a thermal and/or electrical pass;
compressing the material inwards from both ends of the groove, using a compressing means; and
polishing both sides of the substrate to remove a portion of the material stuck out of the groove and the metal layer on the upper side of the substrate,
wherein the material and the metal layer are kept or confined within both ends of the groove, and
wherein both ends of the material and the metal layer are directly exposed to the outside to form the thermal and/or electrical pass inside the substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the groove is a through hole.

### Claim 3 (depends on 2)

The method of claim 2, wherein, during compressing, a compressed conductive ball is used.

### Claim 4 (depends on 2)

The method of claim 2, wherein, during introducing the material, an electroplated pillar forms the thermal and/or electrical pass.

### Claim 5 (depends on 4)

The method of claim 4, further comprising:
after introducing the material, forming a fixation substance between the groove and the electroplated pillar.

### Claim 6 (depends on 2)

The method of claim 2, wherein, during compressing, metal powders are compressed inwards from both ends of the through hole.

### Claim 7 (depends on 1)

The method of claim 1, wherein the groove is a trench, and the trench has one end blocked.

### Claim 8 (depends on 7)

The method of claim 7, wherein, during compressing, an auxiliary substrate is used.

### Claim 9 (depends on 8)

The method of claim 8, wherein a sacrificial layer is formed on the auxiliary substrate.

### Claim 10 (depends on 8)

The method of claim 8, wherein a bonding material is provided on a front side of the substrate.

### Claim 11

A method for manufacturing a supporting substrate for a semiconductor light emitting device, comprising:
preparing a substrate having a groove;
forming a metal layer on an upper side of the substrate and only within the groove to enhance adhesion and to form an electrical pass;
introducing a material into the groove of the substrate where the metal layer is formed inside, the material serving to form a thermal and/or electrical pass arranged on an auxiliary substrate provided with a sacrificial layer;
separating, from the substrate, the auxiliary substrate with respect to the sacrificial layer; and
polishing both sides of the substrate to remove a portion of the material stuck out of the groove and the metal layer on the upper side of the substrate,
wherein the material and the metal layer are kept or confined within both ends of the groove, and
wherein both ends of the material and the metal layer are directly exposed to the outside to form the thermal and/or electrical pass inside the substrate.

### Claim 12 (depends on 11)

The method of claim 11, wherein the material is a conductive pillar.

### Claim 13 (depends on 11)

The method of claim 11, wherein the material is a conductive ball.