# US 12,183,846 B2 · Device and method for removing metal gallium, and laser lift-off system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,846 B2 - Document ID: US12183846B2 - Status: Granted - Kind: B2 - Application number: 17/430,718 - Filed: 2020-06-16 - Published: 2022-12-29 - Granted: 2024-12-31 - Earliest claimed: 2020-06-16 - Assignees: Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. - Applicants: Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. - Inventors: Chunlin Fan; Bin Wang; Qing Wang - Web page: https://patentgrep.com/patent/US12183846B2 ## CPC - H10H 20/01: Manufacture or treatment - H10H 20/018: {Bonding of wafers} - H10H 20/80: Constructional details - H10P 70/20: {Cleaning during device manufacture} - H10P 95/11: {Separation of active layers from substrates} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure relates to a device and method for removing metal gallium, and a laser lift-off system. The device includes a device body, and the device body includes a process chamber (10), wherein fluid used for removing metal gallium left on the surfaces of multiple Micro Light Emitting Diode (Micro-LED) chips after laser lift-off is contained in the process chamber (10); and a temperature of the fluid is greater than or equal to a melting point of metal gallium. ## Claims ### Claim 1 A device for removing metal gallium, the device for removing metal gallium is placed inside a lift-off chamber, comprising: a device body, comprising a process chamber; wherein fluid used for removing metal gallium left on surfaces of multiple Micro Light Emitting Diode (Micro-LED) chips after laser lift-off performed by a laser lift-off device is contained in the process chamber, wherein the laser lift-off device comprises the lift-off chamber; and a temperature of the fluid is greater than or equal to a melting point of metal gallium. ### Claim 2 (depends on 1) The device according to claim 1, further comprising one or more sensors arranged in the process chamber and configured to detect one or more process parameters in the process chamber. ### Claim 3 (depends on 2) The device according to claim 2, wherein the sensors comprise a temperature sensor and a liquid level sensor; the temperature sensor is configured to detect the temperature of the fluid in the process chamber; and the liquid level sensor is configured to detect a liquid level of the fluid in the process chamber. ### Claim 4 (depends on 3) The device according to claim 3, wherein the sensors further comprise a vacuum degree sensor, and the vacuum degree sensor is configured to detect a vacuum degree in the process chamber. ### Claim 5 (depends on 1) The device according to claim 1, wherein the process chamber comprises a fluid inlet and a fluid outlet, and each of the fluid inlet and the fluid outlet is provided with a valve for controlling flow of the fluid. ### Claim 6 (depends on 5) The device according to claim 5, wherein the fluid inlet and the fluid outlet are each further provided with a temperature detector configured to detect the temperature of the fluid and a flow detector configured to detect flow of the fluid. ### Claim 7 (depends on 1) The device according to claim 1, wherein an extraction opening configured for vacuumizing is provided on the top of the process chamber, and the extraction opening is connected to a vacuum pump through a vacuumizing pipeline. ### Claim 8 A method for removing metal gallium based on a device for removing metal gallium, wherein the device comprises a process chamber; the method comprises: providing a temporary storage substrate after laser lift-off performed by a laser lift-off device, wherein multiple Micro Light Emitting Diode (Micro-LED) chips are adhered to the temporary storage substrate, wherein the laser lift-off device comprising a lift-off chamber, the device for removing metal gallium is placed inside the lift-off chamber; transferring the temporary storage substrate into the process chamber; and introducing a specific amount of fluid into the process chamber to remove residual metal gallium on surfaces of the multiple Micro-LED chips, wherein a temperature of the fluid is greater than or equal to a melting point of metal gallium. ### Claim 9 (depends on 8) The method according to claim 8, wherein the process chamber comprises a fluid inlet and a fluid outlet; and introducing the fluid into the process chamber to remove the residual metal gallium on the surfaces of the multiple Micro-LED chips comprises: closing the fluid outlet, and introducing the fluid into the process chamber through the fluid inlet; in a process of introducing the fluid, detecting a liquid level and a temperature of the fluid in the process chamber in real time; and in response to detecting that the liquid level and the temperature of the fluid in the process chamber reach preset parameters, opening the fluid outlet, so that the fluid carrying metal gallium flows out of the fluid outlet. ### Claim 10 (depends on 8) The method according to claim 8, before introducing the fluid into the process chamber, further comprising: checking whether a vacuum degree in the process chamber meets a preset requirement or not. ### Claim 11 (depends on 10) The method according to claim 10, wherein the predetermined required vacuum degree is 5.0 Pa to 0.2 Pa. ### Claim 12 (depends on 8) The method according to claim 8, before introducing the fluid into the process chamber, further comprising: introducing inert gas into the process chamber, wherein the inert gas comprises one or more of helium, argon and nitrogen. ### Claim 13 (depends on 8) The method according to claim 8, wherein the fluid does not react with the multiple Micro-LED chips. ### Claim 14 (depends on 13) The method according to claim 13, wherein the fluid comprises one or more of deionized water, ethanol and ultrapure water. ### Claim 15 (depends on 8) The method according to claim 8, wherein the temperature is 29.78 degree Celsius to 90 degree Celsius. ### Claim 16 A laser lift-off system, comprising: a laser lift-off device, configured to separate a temporary storage substrate adhered with multiple Micro Light Emitting Diode (Micro-LED) chips from a growth substrate; a device for removing metal gallium, wherein the device comprises a process chamber, and fluid used for removing metal gallium left on the surfaces of the multiple Micro-LED (Micro-LED) chips after laser lift-off is contained in the process chamber, and a temperature of the fluid is greater than or equal to a melting point of metal gallium; and a transfer device, configured to transfer the temporary storage substrate after laser lift-off into the process chamber; wherein the laser lift-off device further comprises a lift-off chamber inside which the device for removing metal gallium is placed. ### Claim 17 (depends on 16) The laser lift-off system according to claim 16, wherein the laser lift-off device comprises: a laser source, configured to emit laser at a preset wavelength; a laser galvanometer, arranged on a light outlet path of the laser source; and a control device, electrically connected with the laser source and configured to shape the laser emitted by the laser source into light spots with a preset size. ### Claim 18 (depends on 17) The laser lift-off system according to claim 17, wherein the light spots comprise linear light spots or point-shaped light spots. ### Claim 19 (depends on 18) The laser lift-off system according to claim 18, wherein the area of the point-shaped light spots is 600 μm2 to 620 μm2.