# US 12,183,845 B2 · Group III-V device on group IV substrate using contacts with precursor stacks

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- Number: US 12,183,845 B2
- Document ID: US12183845B2
- Status: Granted
- Kind: B2
- Application number: 17/176,472
- Filed: 2021-02-16
- Published: 2021-07-15
- Granted: 2024-12-31
- Earliest claimed: 2020-01-10
- Assignees: Newport Fab, LLC
- Applicants: Newport Fab, LLC
- Inventors: Edward Preisler; Zhirong Tang
- Web page: https://patentgrep.com/patent/US12183845B2

## CPC

- H10F 30/222: the potential barrier being a PN heterojunction
- H10F 71/1272: {comprising at least three elements, e.g. GaAlAs or InGaAsP}
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
- H10F 71/1276: {comprising growth substrates not made of Group III-V materials}
- H10F 71/139: {using temporary substrates}
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- H10F 77/206: {for devices having potential barriers}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. Precursor stacks having at least one precursor metal are situated over at least one portion of the patterned group III-V device. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over each precursor stack. A filler metal is situated in each contact hole and over each precursor stack. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate. Additional contact holes in the blanket dielectric layer can be situated over the group IV devices and filled with the filler metals.

## Claims

### Claim 1

A semiconductor structure comprising:
a group IV substrate;
a patterned group III-V device over said group IV substrate;
a precursor stack over a portion of said patterned group III-V device;
a blanket dielectric layer over said patterned group III-V device;
a contact hole in said blanket dielectric layer over said precursor stack;
a liner stack in said contact hole over said precursor stack;
a filler metal over said liner stack;
wherein said precursor stack comprises a plurality of precursor metals, said liner stack comprises a plurality of metal liners, and a top precursor metal of said plurality of precursor metals comprises at least one shared component metal with a bottom metal liner of said plurality of metal liners;
wherein said shared component metal is selected from the group consisting of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and nickel (Ni).

### Claim 2 (depends on 1)

The semiconductor structure of claim 1, wherein each of said plurality of precursor metals is selected from the group consisting of Ti, TiN, Ta, and Ni.

### Claim 3 (depends on 1)

The semiconductor structure of claim 1, wherein at least one of said plurality of metal liners is selected from the group consisting of a Ti metal liner and a TiN metal liner.

### Claim 4 (depends on 1)

The semiconductor structure of claim 1, wherein said patterned group III-V device is a patterned group III-V photodiode comprising a P type anode and an N type cathode.

### Claim 5 (depends on 1)

The semiconductor structure of claim 1, wherein said patterned group III-V device is optically or electrically connected to a group IV device in said group IV substrate.

### Claim 6 (depends on 1)

The semiconductor structure of claim 1, wherein said plurality of precursor metals comprises at least three precursor metals, and said plurality of metal liners comprises at least two metal liners.

### Claim 7

A semiconductor structure comprising:
a group IV substrate including a group IV device;
a patterned group III-V device over said group IV substrate;
a precursor stack over a portion of said patterned group III-V device;
a blanket dielectric layer over said patterned group III-V device;
a first contact hole in said blanket dielectric layer over said group IV device;
a first liner stack in said first contact hole;
a first filler metal over said first liner stack;
a second contact hole in said blanket dielectric layer over said first precursor stack;
a second liner stack in said second contact hole over said first precursor stack;
a second filler metal over said second liner stack;
wherein said precursor stack comprises a plurality of precursor metals, said second liner stack comprises a plurality of metal liners, and a top precursor metal of said plurality of precursor metals comprises at least one shared component metal with a bottom metal liner of said plurality of metal liners;
wherein said shared component metal is selected from the group consisting of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and nickel (Ni).

### Claim 8 (depends on 7)

The semiconductor structure of claim 7, wherein each of said plurality of precursor metals is selected from the group consisting of Ti, TiN, Ta, and Ni.

### Claim 9 (depends on 7)

The semiconductor structure of claim 7, wherein at least one of said plurality of metal liners is selected from the group consisting of a Ti metal liner and a TiN metal liner.

### Claim 10 (depends on 7)

The semiconductor structure of claim 7, wherein said patterned group III-V device is a patterned group III-V photodiode comprising a P type anode and an N type cathode.

### Claim 11 (depends on 7)

The semiconductor structure of claim 7, wherein said patterned group III-V device is optically connected to another group IV device in said group IV substrate.

### Claim 12 (depends on 7)

The semiconductor structure of claim 7, wherein said plurality of precursor metals comprises at least three precursor metals, and said plurality of metal liners comprises at least two metal liners.

### Claim 13

A semiconductor structure comprising:
a group IV substrate;
a group III-V device over said group IV substrate;
a precursor stack over a portion of said group III-V device;
a dielectric layer over said group III-V device;
a contact hole in said dielectric layer over said precursor stack;
a liner stack in said contact hole over said precursor stack;
a filler metal over said liner stack;
wherein said precursor stack comprises a plurality of precursor metals, said liner stack comprises a plurality of metal liners, and a top precursor metal of said plurality of precursor metals comprises at least one shared component metal with a bottom metal liner of said plurality of metal liners;
wherein said shared component metal is selected from the group consisting of titanium (Ti), titanium nitride (TiN), tantalum (Ta), and nickel (Ni).

### Claim 14 (depends on 13)

The semiconductor structure of claim 13, wherein each of said plurality of precursor metals is selected from the group consisting of Ti, TiN, Ta, and Ni.

### Claim 15 (depends on 13)

The semiconductor structure of claim 13, wherein at least one of said plurality of metal liners is selected from the group consisting of a Ti metal liner and a TiN metal liner.

### Claim 16 (depends on 13)

The semiconductor structure of claim 13, wherein said group III-V device is a group III-V photodiode comprising a P type anode and an N type cathode.

### Claim 17 (depends on 13)

The semiconductor structure of claim 13, wherein said group III-V device is electrically or optically connected a group IV device in said group IV substrate.

### Claim 18 (depends on 13)

The semiconductor structure of claim 13, wherein said plurality of precursor metals comprises at least three precursor metals, and said plurality of metal liners comprises at least two metal liners.