# US 12,183,844 B2 · Radiation detection element, radiation detector and radiation detection device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,844 B2 - Document ID: US12183844B2 - Status: Granted - Kind: B2 - Application number: 17/422,937 - Filed: 2020-01-27 - Published: 2022-03-24 - Granted: 2024-12-31 - Earliest claimed: 2019-02-04 - Assignees: Horiba, Ltd. - Applicants: Horiba, Ltd. - Inventors: Daisuke Matsunaga; Antonino Picciotto; Giacomo Borghi - Web page: https://patentgrep.com/patent/US12183844B2 ## CPC - H10F 30/29: the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation - G01T 1/24: with semiconductor detectors - G01T 1/2928: {using solid state detectors} - H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80) - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00) ## Abstract The radiation detection element comprising a semiconductor part having a plate shape, a first electrode that is disposed on a first surface being one surface of the semiconductor part and that collects charges generated by incidence of radiation in the semiconductor part, a second electrode that is disposed on a second surface being the other surface of the semiconductor part and that is applied with voltage needed for collecting the charges, and a heavily-doped layer that is disposed at a region of the second surface excluding an edge of the semiconductor part and is doped heavier than the semiconductor part with dopants for making a type of a semiconductor equal to that of the semiconductor part. The heavily-doped layer is on the second surface located at a position overlapped with the second electrode and is thicker than the second electrode. ## Claims ### Claim 1 A radiation detection element, comprising: a semiconductor part having a plate shape; a first electrode that is disposed on a first surface being one surface of the semiconductor part and that is configured to collect charges generated by incidence of radiation in the semiconductor part and to output a signal; a second electrode that is disposed on a second surface being the other surface of the semiconductor part and that is applied with voltage needed for collecting the charges; and a heavily-doped layer that is disposed at a region of the second surface excluding an edge of the semiconductor part and is doped heavier than the semiconductor part with dopants for making a type of a semiconductor equal to that of the semiconductor part, wherein the second electrode is doped with dopants for making a type of a semiconductor different from that of the semiconductor part and the constituent of the second electrode is a semiconductor being different in type from the semiconductor part, and the heavily-doped layer is on the second surface located at a position overlapped with the second electrode and is thicker than the second electrode. ### Claim 2 (depends on 1) The radiation detection element according to claim 1, wherein the heavily-doped layer is narrower than the second electrode. ### Claim 3 (depends on 1) The radiation detection element according to claim 1, wherein a plurality of sets of the first electrode and the heavily-doped layer are provided, the plurality of heavily-doped layers are spaced from each other, and the second surface includes a region located between the plurality of heavily-doped layers where the heavily-doped layer is not present. ### Claim 4 (depends on 1) The radiation detection element according to claim 1, further comprising a plurality of third electrodes that are disposed on the first surface, that surround the first electrode and that are different from each other in distance from the first electrode, wherein voltage is applied to the third electrodes such that an electric potential gradient with a potential varying toward the first electrode is generated in the semiconductor part. ### Claim 5 (depends on 4) The radiation detection element according to claim 4, wherein the heavily-doped layer corresponding to the first electrode is not present at a region on the second surface, the region being located on a reverse side of a position having a distance from the first electrode longer than a distance from the first electrode to the outermost third electrode out of the plurality of third electrodes on the first surface. ### Claim 6 (depends on 4) The radiation detection element according to claim 4, wherein the heavily-doped layer corresponding to the first electrode is not present at a region the second surface, the region being located on a reverse side of a position having a distance from the first electrode longer than a distance from the first electrode to an outer edge of the third electrode having a maximum potential difference from the first electrode out of the plurality of third electrodes on the first surface. ### Claim 7 (depends on 4) The radiation detection element according to claim 4, wherein a plurality of sets including the first electrode and the plurality of third electrodes are provided, and the heavily-doped layers are not contiguous past a region located on the reverse side of the third electrode having a maximum potential difference from the first electrode out of the plurality of third electrodes. ### Claim 8 (depends on 1) A radiation detector, comprising: the radiation detection element according to claim 1; a board on which the radiation detection element is placed; and a housing that accommodates the radiation detection element and the board. ### Claim 9 (depends on 8) A radiation detection device, comprising: an irradiation unit that irradiates a sample with radiation; a radiation detector according to claim 8 that detects radiation generated from the sample; and a processor, wherein the processor analyzes a detection result of radiation by the radiation detector.