# US 12,183,841 B2 · Solar cell and manufacturing method thereof, and photovoltaic module

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- Number: US 12,183,841 B2
- Document ID: US12183841B2
- Status: Granted
- Kind: B2
- Application number: 18/365,170
- Filed: 2023-08-03
- Published: 2024-08-22
- Granted: 2024-12-31
- Earliest claimed: 2023-02-22
- Assignees: Zhejiang Jinko Solar Co., Ltd.
- Applicants: Zhejiang Jinko Solar Co., Ltd.
- Inventors: Bike Zhang; Mengwei Xu; Jingsheng Jin; Xinyu Zhang
- Web page: https://patentgrep.com/patent/US12183841B2

## CPC

- H10F 10/166: the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
- H10F 19/906: {characterised by the materials of the structures}
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/129: {Passivating}
- H10F 77/143: {comprising quantum structures}
- H10F 77/211: {for photovoltaic cells}
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate including first and second surfaces opposite to each other; emitter and first passivation layer formed over the first surface; tunneling layer formed over the second surface; first doped conductive layer and retardation layer formed on the tunneling layer and corresponding to metallization region, the first doped conductive layer is located between the tunneling layer and the retardation layer; second doped conductive layer formed over the tunneling layer and covering the tunneling layer in non-metallization region and the retardation layer, the retardation layer is configured to retard migration of doped element in the second doped conductive layer to the first doped conductive layer; second passivation layer formed over the second doped conductive layer; and second electrode forming contact with the second doped conductive layer and first electrode forming contact with the emitter.

## Claims

### Claim 1

A solar cell, comprising:
a semiconductor substrate, the semiconductor substrate including a first surface and a second surface arranged opposite to each other;
an emitter and a first passivation layer formed over the first surface of the semiconductor substrate;
a tunneling layer formed over the second surface of the semiconductor substrate;
a first doped conductive layer and a retardation layer formed on a surface of the tunneling layer, wherein the first doped conductive layer is located between the tunneling layer and the retardation layer, and the first doped conductive layer and the retardation layer correspond to a metallization region;
a second doped conductive layer formed over the surface of the tunneling layer, the second doped conductive layer covering the tunneling layer in a non-metallization region and the retardation layer, wherein the retardation layer is configured to retard migration of a doped element in the second doped conductive layer to the first doped conductive layer;
a second passivation layer formed over a surface of the second doped conductive layer; and
a second electrode penetrating through the second passivation layer to form contact with the second doped conductive layer and a first electrode penetrating through the first passivation layer to form contact with the emitter,
wherein a doping concentration of the second doped conductive layer is greater than a doping concentration of the first doped conductive layer.

### Claim 2 (depends on 1)

The solar cell according to claim 1, wherein a ratio of a width of the first doped conductive layer to a width of the retardation layer is in a range of 1:1 to 1:2.

### Claim 3 (depends on 1)

The solar cell according to claim 1, wherein a surface area of the tunneling layer in contact with the first doped conductive layer is denoted as S1, a sum of the surface area of the tunneling layer in contact with the first doped conductive layer and a surface area of the tunneling layer in contact with the second doped conductive layer is denoted as S2, and S1:S2 is in a range of 1:5 to 1:50.

### Claim 4 (depends on 1)

The solar cell according to claim 1, wherein a doped element in the first doped conductive layer includes at least one of boron, phosphorus, gallium, or arsenic.

### Claim 5 (depends on 1)

The solar cell according to claim 1, wherein a doping concentration of the first doped conductive layer ranges from 1E18 cm−3 to 1.5E21 cm−3.

### Claim 6 (depends on 1)

The solar cell according to claim 1, wherein a doping concentration of the first doped conductive layer ranges from 1E18 cm−3 to 4.5E19 cm−3 or from 1E19 cm−3 to 1.5E21 cm−3.

### Claim 7 (depends on 1)

The solar cell according to claim 1, wherein a thickness of the first doped conductive layer ranges from 20 nm to 150 nm.

### Claim 8 (depends on 1)

The solar cell according to claim 1, wherein a doped element in the second doped conductive layer includes at least one of boron, phosphorus, gallium, or arsenic.

### Claim 9 (depends on 1)

The solar cell according to claim 1, wherein a doping concentration of the second doped conductive layer ranges from 5E18 cm−3 to 2E21 cm−3.

### Claim 10 (depends on 1)

The solar cell according to claim 1, wherein a doping concentration of the second doped conductive layer ranges from 5E18 cm−3 to 5E19 cm−3 or from 5E19 cm−3 to 2E21 cm−3.

### Claim 11 (depends on 1)

The solar cell according to claim 1, wherein a thickness of the second doped conductive layer ranges from 20 nm to 200 nm.

### Claim 12 (depends on 1)

The solar cell according to claim 1, wherein a material of the retardation layer includes at least one of silicon oxide, silicon carbide, silicon nitride, or magnesium fluoride.

### Claim 13 (depends on 1)

The solar cell according to claim 1, wherein a thickness of the retardation layer ranges from 0.5 nm to 4 nm.

### Claim 14 (depends on 1)

The solar cell according to claim 1, wherein a thickness of the first doped conductive layer is less than a thickness of the second doped conductive layer.

### Claim 15 (depends on 1)

The solar cell according to claim 1, wherein a doping concentration of the second doped conductive layer in the non-metallization region is greater than a doping concentration of the second doped conductive layer in the metallization region.

### Claim 16 (depends on 1)

The solar cell according to claim 1, wherein a doping concentration of the first doped conductive layer decreases along a direction from the first doped conductive layer to the tunneling layer.

### Claim 17 (depends on 1)

The solar cell according to claim 1, wherein, along a direction parallel to a plane where the tunneling layer is located, a doping concentration of the first doped conductive layer facing the second doped conductive layer is greater than a doping concentration of the first doped conductive layer away from the second doped conductive layer.

### Claim 18

A photovoltaic module, comprising:
a cover plate;
a packaging material layer; and
at least one solar cell string, wherein the at least one solar cell string includes a plurality of solar cells and at least one of the plurality of solar cells includes:
a semiconductor substrate, the semiconductor substrate including a first surface and a second surface arranged opposite to each other;
an emitter and a first passivation layer formed over the first surface of the semiconductor substrate;
a tunneling layer formed over the second surface of the semiconductor substrate;
a first doped conductive layer and a retardation layer formed on a surface of the tunneling layer, wherein the first doped conductive layer is located between the tunneling layer and the retardation layer, and the first doped conductive layer and the retardation layer correspond to a metallization region;
a second doped conductive layer formed over the surface of the tunneling layer, the second doped conductive layer covering the tunneling layer in a non-metallization region and the retardation layer, wherein the retardation layer is configured to retard migration of a doped element in the second doped conductive layer to the first doped conductive layer;
a second passivation layer formed over a surface of the second doped conductive layer; and
a second electrode penetrating through the second passivation layer to form contact with the second doped conductive layer and a first electrode penetrating through the first passivation layer to form contact with the emitter,
wherein a doping concentration of the second doped conductive layer is greater than a doping concentration of the first doped conductive layer.