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AssigneeTrina Solar Co., Ltd.
InventorsXueling Zhang, Wei Liu, Hong Chen, Lei Jian, Yifeng Chen
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A laminated passivation structure of solar cell and a preparation method thereof are disclosed herein. The laminated passivation structure of solar cell includes a P-type silicon substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer sequentially arranged on the back surface of the P-type silicon substrate from inside to outside. The preparation method includes generating a first dielectric layer on the back surface of the P-type silicon substrate, and then sequentially depositing a second dielectric layer, a third dielectric layer and a fourth dielectric layer on the first dielectric layer.
A laminated passivation structured solar cell comprising a P-type silicon substrate, and a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, a third dielectric layer having a third refractive index and a fourth dielectric layer having a fourth refractive index, wherein the first, second, third, and fourth dielectric layers are sequentially arranged on a back surface of the P-type silicon substrate from inside to outside, the third dielectric layer is a silicon oxynitride layer, the fourth dielectric layer includes a silicon nitride layer, and the third refractive index is smaller than the fourth refractive index.
A method for preparing a laminated passivation structured solar cell having a P-type silicon substrate, and a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer sequentially arranged on the back surface of the P-type silicon substrate from inside to outside, the method comprising:
A laminated passivation structured solar cell comprising a P-type silicon substrate, and a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, a third dielectric layer having a third refractive index and a fourth dielectric layer having a fourth refractive index, wherein the first, second, third, and fourth dielectric layers are sequentially arranged on a back surface of the P-type silicon substrate from inside to outside, the third dielectric layer includes a silicon oxynitride layer, the fourth dielectric layer includes a silicon carbide layer, and the third refractive index is smaller than the fourth refractive index.
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