# US 12,183,838 B1 · Passivation of infrared detectors using oxide layer

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- Number: US 12,183,838 B1
- Document ID: US12183838B1
- Status: Granted
- Kind: B1
- Application number: 18/490,456
- Filed: 2023-10-19
- Granted: 2024-12-31
- Earliest claimed: 2013-03-15
- Assignees: HRL Laboratories, LLC
- Applicants: Hrl Laboratories, LLC.
- Inventors: Pierre-Yves Delaunay
- Web page: https://patentgrep.com/patent/US12183838B1

## CPC

- H10F 30/21: the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F 77/30: Coatings (arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation H10F77/80)
- H10F 71/129: {Passivating}
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- H10F 77/20: Electrodes
- H10F 77/306: {for devices having potential barriers}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An infrared detector and a method for manufacturing it are disclosed. The infrared detector contains an absorber layer responsive to infrared light, a barrier layer disposed on the absorber layer, a plurality of contact structures disposed on the barrier layer; and an oxide layer disposed above the barrier layer and between the plurality of the contact structures, wherein the oxide layer reduces the dark current in the infrared detector. The method disclosed teaches how to manufacture the infrared detector.

## Claims

### Claim 1

A method of manufacturing an infrared detector, the method comprising:
forming an absorber layer responsive to infrared light;
forming a barrier layer on the absorber layer;
forming a plurality of contact structures on the barrier layer;
forming an oxide layer above the barrier layer and between the plurality of contact structures; and
forming a passivation layer above the oxide layer, the passivation layer covering at least a portion of a top surface of a contact structure of the plurality of contact structures and defining an opening therethrough that exposes a portion of the top surface of the contact structure.

### Claim 2 (depends on 1)

The method of claim 1, wherein the forming the oxide layer implements an O2 plasma process.

### Claim 3 (depends on 1)

The method of claim 1, wherein the forming the oxide layer implements a thermal oxidation process.

### Claim 4 (depends on 1)

The method of claim 1, wherein the forming the oxide layer implements a natural oxidation process, and
wherein the infrared detector is allowed to sit at a pre-determined temperature for a pre-determined period of time.

### Claim 5 (depends on 4)

The method of claim 4, wherein the pre-determined temperature is room temperature.

### Claim 6 (depends on 1)

The method of claim 1, wherein the oxide layer comprises Al-oxides.

### Claim 7 (depends on 1)

The method of claim 1, wherein the oxide layer comprises As-oxides.

### Claim 8 (depends on 1)

The method of claim 1, wherein the oxide layer comprises Sb-oxides.

### Claim 9 (depends on 1)

The method of claim 1, wherein the forming the oxide layer comprises covering at least a portion of one contact structure out of the plurality of the contact structures.

### Claim 10 (depends on 1)

The method of claim 1, wherein the forming the passivation layer implements a Plasma-enhanced Chemical Vapor Deposition process.

### Claim 11 (depends on 1)

The method of claim 1, wherein the oxide layer has a first portion above the barrier layer and between the plurality of contact structures and has a second portion extending from the first portion along sides of the plurality of contact structures facing one another.