# US 12,183,830 B2 · Display device and manufacturing method therefor

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- Number: US 12,183,830 B2
- Document ID: US12183830B2
- Status: Granted
- Kind: B2
- Application number: 17/584,481
- Filed: 2022-01-26
- Published: 2022-05-12
- Granted: 2024-12-31
- Earliest claimed: 2019-08-06
- Assignees: Japan Display Inc.
- Applicants: Japan Display Inc.
- Inventors: Yohei Yamaguchi
- Web page: https://patentgrep.com/patent/US12183830B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- G09F 9/00: Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements (in which the variable information is permanently attached to a movable support G09F11/00; abacus G06C1/00; slide-rules G06G1/00)
- G09F 9/30: in which the desired character or characters are formed by combining individual elements (panels comprising a number of electrodes in a single cell controlling light arriving from an independent light source, e.g. electro-optical or magneto-optical cell, G02F1/00)
- H10D 30/031: {of thin-film transistors [TFT]}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G09F: DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS

## Abstract

A display device includes a metal layer composed of multiple layers including a lowermost layer lower in an ionization tendency than a middle layer, the lowermost layer being in contact with and on the oxide semiconductor layer. Each channel region is interposed between a corresponding one of the first electrodes and a corresponding one of the second electrodes, constituting a corresponding one of the thin film transistors. The oxide semiconductor layer is continuous between a pair of channel regions included in an adjacent pair of thin film transistors. The metal layer is continuous between a pair of first electrodes included in the adjacent pair of thin film transistors.

## Claims

### Claim 1

A display device with a plurality of thin film transistors, comprising:
a plurality of gate electrodes;
a gate insulating layer covering the plurality of gate electrodes;
an oxide semiconductor layer on the gate insulating layer; and
a metal layer composed of multiple layers including a lowermost layer and a middle layer, the lowermost layer being lower in an ionization tendency than the middle layer, the lowermost layer being in contact with and on the oxide semiconductor layer,
wherein
the oxide semiconductor layer includes a plurality of channel regions,
the metal layer includes a plurality of first electrodes and a plurality of second electrodes,
each of the plurality of channel regions is interposed between a corresponding one of the plurality of first electrodes and a corresponding one of the plurality of second electrodes, constituting a corresponding one of the plurality of thin film transistors,
the oxide semiconductor layer is continuous between a pair of the plurality of channel regions included in an adjacent pair of the plurality of thin film transistors, and
the metal layer is continuous between a pair of the plurality of first electrodes included in the adjacent pair of the plurality of thin film transistors.

### Claim 2 (depends on 1)

The display device according to claim 1, wherein
each of the plurality of gate electrodes is integrated with a corresponding one of a plurality of scan lines, and
each of the plurality of first electrodes is integrated with a corresponding one of a plurality of video signal lines.

### Claim 3 (depends on 1)

The display device according to claim 1, wherein each of the plurality of second electrodes is connected to a corresponding one of a plurality of pixel electrodes.

### Claim 4 (depends on 1)

The display device according to claim 1, wherein
an uppermost layer of the metal layer is made from the same material as the lowermost layer, and
the middle layer is interposed between the lowermost layer and the uppermost layer.

### Claim 5 (depends on 1)

The display device according to claim 1, wherein
the lowermost layer includes titanium, and
the middle layer includes aluminum.

### Claim 6 (depends on 1)

The display device according to claim 1, wherein each of the plurality of thin film transistors has a channel width smaller than either of widths of a drain electrode and a source electrode.