# US 12,183,829 B2 · Thin film transistor, method of manufacturing the same, and electronic device

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- Number: US 12,183,829 B2
- Document ID: US12183829B2
- Status: Granted
- Kind: B2
- Application number: 17/558,874
- Filed: 2021-12-22
- Published: 2022-11-24
- Granted: 2024-12-31
- Earliest claimed: 2021-05-24
- Assignees: Adrc. Co. Kr
- Applicants: Adrc. Co. Kr
- Inventors: Jin Jang; Suhui Lee
- Web page: https://patentgrep.com/patent/US12183829B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/031: {of thin-film transistors [TFT]}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Disclosed are a method of manufacturing a thin film transistor, a thin film transistor, and an electronic device. The method of manufacturing a thin film transistor includes forming an oxide semiconductor layer, forming a gate electrode overlapped with at least a portion of the oxide semiconductor layer, and forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein the forming of the oxide semiconductor layer includes preparing a precursor solution for an oxide semiconductor, and performing spray pyrolysis of the precursor solution for the oxide semiconductor to obtain a c-axis aligned crystalline oxide semiconductor.

## Claims

### Claim 1

A method of manufacturing a thin film transistor, comprising:
forming an oxide semiconductor layer,
forming a gate electrode overlapped with at least a portion of the oxide semiconductor layer, and
forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer,
wherein the forming of the oxide semiconductor layer comprises
preparing a precursor solution for an oxide semiconductor, and
performing spray pyrolysis of the precursor solution for the oxide semiconductor to obtain a c-axis aligned crystalline oxide semiconductor.

### Claim 2 (depends on 1)

The method of claim 1, wherein
the precursor solution for the oxide semiconductor comprises a metal precursor, and
the metal precursor comprises a zinc precursor or at least three of an indium precursor, a gallium precursor, a tin precursor, and a zinc precursor.

### Claim 3 (depends on 1)

The method of claim 1, wherein the precursor solution for the oxide semiconductor comprises an additive containing acetate.

### Claim 4 (depends on 3)

The method of claim 3, wherein the additive comprises ammonium acetate.

### Claim 5 (depends on 1)

The method of claim 1, wherein the performing of spray pyrolysis of the precursor solution for the oxide semiconductor is performed at about 200° C. to about 500° C.

### Claim 6 (depends on 1)

The method of claim 1, wherein the performing of spray pyrolysis of the precursor solution for the oxide semiconductor is performed on a hot plate or a heated substrate holder.

### Claim 7 (depends on 1)

The method of claim 1, wherein the c-axis aligned crystalline oxide semiconductor comprises a plurality of grains oriented in one direction.

### Claim 8 (depends on 1)

The method of claim 1, wherein the XRD spectrum of the c-axis aligned crystalline oxide semiconductor comprises a (009) diffraction peak as a maximum peak.

### Claim 9 (depends on 8)

The method of claim 8, wherein the c-axis aligned crystalline oxide semiconductor comprises one of a c-axis aligned indium-gallium-zinc oxide, a c-axis aligned indium-gallium-tin oxide, a c-axis aligned indium-zinc-tin oxide, or a c-axis aligned crystalline indium-gallium-tin-zinc oxide.

### Claim 10 (depends on 1)

The method of claim 1, wherein
the c-axis aligned crystalline oxide semiconductor is a c-axis aligned zinc oxide, and
the XRD spectrum of the c-axis aligned zinc oxide comprises a (002) diffraction peak as a maximum peak.

### Claim 11 (depends on 1)

The method of claim 1, wherein the c-axis aligned crystalline oxide semiconductor is one of a c-axis aligned indium-gallium-zinc oxide, a c-axis aligned indium-gallium-tin oxide, a c-axis aligned crystalline indium-zinc-tin oxide, a c-axis aligned gallium-indium-tin-zinc oxide, or a c-axis aligned zinc oxide.

### Claim 12 (depends on 1)

The method of claim 1,
further comprising before forming the source electrode and the drain electrode
exposing a portion of the c-axis aligned crystalline oxide semiconductor, and
supplying a fluorine-containing gas to an exposed region of the c-axis aligned crystalline oxide semiconductor to perform plasma treatment.

### Claim 13 (depends on 12)

The method of claim 12, wherein
the fluorine-containing gas comprises at least one of carbon tetrafluoride CF4, nitrogen trifluoride NF3, or sulfur hexafluoride SF6, and
the plasma treatment is performed at about 20° C. to about 420° C.

### Claim 14 (depends on 1)

A thin film transistor manufactured by the method of claim 1.

### Claim 15 (depends on 14)

A display panel comprising the thin film transistor of claim 14.

### Claim 16 (depends on 14)

An electronic device comprising the thin film transistor of claim 14.