# US 12,183,824 B2 · Thin film transistor and method for manufacturing the same, array substrate and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,824 B2 - Document ID: US12183824B2 - Status: Granted - Kind: B2 - Application number: 17/611,156 - Filed: 2021-01-28 - Published: 2023-03-23 - Granted: 2024-12-31 - Earliest claimed: 2021-01-28 - Assignees: Boe Technology Group Co., Ltd. - Applicants: Boe Technology Group Co., Ltd. - Inventors: Jie Huang; Jiayu He; Ce Ning; Zhengliang Li; Hehe Hu; Fengjuan Liu; Nianqi Yao; Kun Zhao; Tianmin Zhou; Jiushi Wang; Zhongpeng Tian - Web page: https://patentgrep.com/patent/US12183824B2 ## CPC - H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10D 99/00: Subject matter not provided for in other groups of this subclass - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation. ## Claims ### Claim 1 A thin film transistor, comprising an active layer, wherein the active layer comprises at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers comprise a channel layer and a first protection layer, and metal elements in the channel layer comprise tin and at least one of indium, gallium and zinc; and, the first protection layer comprises praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation, and a number of praseodymium atoms per unit volume at a position distal from the channel layer is less than a number of praseodymium atoms per unit volume at a position proximal to the channel layer. ### Claim 2 (depends on 1) The thin film transistor according to claim 1, wherein the metal elements in the channel layer comprise tin, indium and gallium; a ratio of a number of indium atoms in the channel layer to a total number of indium atoms, gallium atoms and tin atoms in the channel layer is between 65% and 75%; a ratio of a number of gallium atoms in the channel layer to a total number of indium atoms, gallium atoms and tin atoms in the channel layer is between 24% and 30%; and a ratio of a number of tin atoms in the channel layer to a total number of indium atoms, gallium atoms and tin atoms in the channel layer is between 1% and 5%. ### Claim 3 (depends on 1) The thin film transistor according to claim 1, wherein praseodymium is doped into the channel layer; in the channel layer, a number of praseodymium atoms per unit volume in the channel layer gradually decreases in a direction being distal from the first protection layer. ### Claim 4 (depends on 1) The thin film transistor according to claim 1, wherein the first protection layer is disposed on a surface of the channel layer proximal to a base substrate of the thin film transistor. ### Claim 5 (depends on 1) The thin film transistor according to claim 1, wherein metal elements in the first protection layer further comprise at least one of tin, indium, gallium and zinc; a ratio of a number of praseodymium atoms in the first protection layer to a total number of atoms of metal elements in the first protection layer is between 1% and 50%. ### Claim 6 (depends on 5) The thin film transistor according to claim 5, wherein the metal elements in the first protection layer further comprise indium, gallium and zinc; a ratio of a number of indium atoms in the first protection layer to a total number of indium atoms, gallium atoms and zinc atoms in the first protection layer is between 45% and 55%; a ratio of a number of gallium atoms in the first protection layer to a total number of indium atoms, gallium atoms and zinc atoms in the first protection layer is between 25% and 35%; a ratio of a number of zinc atoms in the first protection layer to a total number of indium atoms, gallium atoms and zinc atoms in the first protection layer is between 15% and 25%. ### Claim 7 (depends on 1) An array substrate, comprising a base substrate and a plurality of thin film transistors according to claim 1 on the base substrate. ### Claim 8 (depends on 7) The array substrate according to claim 7, further comprising: a first insulation layer covered on the first protection layer, the source electrode and the drain electrode; a first electrode layer comprising a plurality of first electrodes disposed at a side of the first insulation layer distal from the base substrate; a second insulation layer covered on the plurality of first electrodes; and a second electrode layer disposed at a side of the second insulation layer distal from the base substrate and electrically connected to the source electrode or the drain electrode in the corresponding thin film transistor. ### Claim 9 (depends on 7) A display device, comprising the array substrate according to claim 7. ### Claim 10 (depends on 9) The display device according to claim 9, wherein the first protection layer is disposed on a surface of the channel layer distal from a base substrate of the thin film transistor; the active layer comprises at least three metal oxide semi-conductor layers comprising the channel layer, the first protection layer and a second protection layer; and the second protection layer is disposed on a surface of the channel layer proximal to the base substrate, wherein the second protection layer comprises praseodymium. ### Claim 11 (depends on 1) The thin film transistor according to claim 1, wherein the first protection layer is disposed on a surface of the channel layer distal from a base substrate of the thin film transistor. ### Claim 12 (depends on 11) The thin film transistor according to claim 11, further comprising: a diffusion layer disposed at a side of the first protection layer distal from the base substrate, wherein the diffusion layer is a praseodymium metal layer or a praseodymium oxide layer. ### Claim 13 (depends on 11) The thin film transistor according to claim 11, further comprising: a source electrode and a drain electrode disposed on the active layer, wherein each of the source electrode and the drain electrode wraps a side wall of the active layer, respectively, and is connected to a side wall of the channel layer, respectively; each of the source electrode and the drain electrode comprises praseodymium. ### Claim 14 (depends on 11) The thin film transistor according to claim 11, wherein the active layer comprises at least three metal oxide semi-conductor layers comprising the channel layer, the first protection layer and a second protection layer; and the second protection layer is disposed on a surface of the channel layer proximal to the base substrate, wherein the second protection layer comprises praseodymium. ### Claim 15 (depends on 14) The thin film transistor according to claim 14, wherein the second protection layer is an indium gallium zinc oxide layer comprising praseodymium; a ratio of a number of praseodymium atoms in the second protection layer to a total number of atoms of metal elements in the second protection layer is between 1% and 50%. ### Claim 16 (depends on 11) The thin film transistor according to claim 11, wherein the active layer comprises at least five metal oxide semi-conductor layers comprising the channel layer, the first protection layer, the second protection layer, a source drain layer and a covering layer; the source drain layer is disposed on a surface of the first protection layer distal from the base substrate; and a covering layer is disposed between the first protection layer and the source drain layer, wherein the covering layer is a crystalline oxide layer without doped praseodymium. ### Claim 17 (depends on 16) The thin film transistor according to claim 16, wherein the covering layer is a crystalline metal oxide layer, and metals in the crystalline metal oxide layer comprise at least one of indium, gallium, zinc and tin. ### Claim 18 A method for manufacturing a thin film transistor, comprising: providing a base substrate; and forming an active layer of the thin film transistor by sequentially forming at least two metal oxide semi-conductor layers on the base substrate, wherein the at least two metal oxide semi-conductor layers comprise a channel layer and a first protection layer, and metal elements in the channel layer comprise tin and at least one of indium, gallium and zinc; and the first protection layer comprises praseodymium used to absorb photo-generated electrons at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation, and a number of praseodymium atoms per unit volume at a position distal from the channel layer is less than a number of praseodymium atoms per unit volume at a position proximal to the channel layer. ### Claim 19 (depends on 18) The method according to claim 18, wherein sequentially forming at least two metal oxide semi-conductor layers on the base substrate comprises: forming an indium gallium tin oxide film layer on the base substrate; forming a diffusion film layer at a side of the indium gallium tin oxide film layer distal from the base substrate, wherein the diffusion film layer is a praseodymium metal film layer or a praseodymium oxide film layer; obtaining an active layer comprising the channel layer and the first protection layer that are sequentially laminated on the base substrate by performing annealing for the indium gallium tin oxide film layer and the diffusion film layer and diffusing praseodymium in the diffusion film layer into the indium gallium tin oxide film layer; and obtaining a diffusion layer disposed on the active layer by patterning the diffusion film layer, wherein the diffusion layer is disposed at a side of the first protection layer distal from the base substrate, and the diffusion layer is a praseodymium metal layer or a praseodymium oxide layer. ### Claim 20 (depends on 19) The method according to claim 19, further comprising: forming a source drain metal layer on the diffusion layer, wherein the source drain metal layer comprises praseodymium; and forming a source electrode and a drain electrode by patterning the source drain metal layer.