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US 12,183,814 B1Granted
Multi-channel transistor
AssigneeGlobalFoundries U.S. Inc.
InventorsSteven J. Bentley, Francois Hebert, Lawrence Selvaraj Susai, Johnatan A Kantarovsky, Michael Zierak, Mark D. Levy, John Ellis-Monaghan
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to multi-channel transistors and methods of manufacture. The structure includes: a gate structure; a single channel layer in a channel region under the gate structure; a drift region adjacent to the gate structure; and multiple channel layers in the drift region coupled to the single channel layer under the gate structure.
Claims20
A structure comprising:
- a gate structure;
- a single channel layer in a channel region under the gate structure;
- a drift region adjacent to the gate structure;
- and
- multiple channel layers in the drift region coupled to the single channel layer under the gate structure.
2 more elements
A structure comprising:
- a gate structure;
- a channel region under the gate structure;
- and
- a drift region adjacent to the gate structure,
- wherein the channel region comprises a single channel and the drift region comprising a stack of channel layers electrically strapped together and connecting to a drain ohmic contact.
2 more elements
A method comprising:
- forming a gate structure;
- forming a single channel layer in a channel region under the gate structure;
- forming a drift region adjacent to the gate structure;
- and
- forming multiple channel layers in the drift region coupled to the single channel layer under the gate structure.
2 more elements
Dependencies are inferred from the claim text.