# US 12,183,813 B2 · Cell structure and semiconductor device using same

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- Number: US 12,183,813 B2
- Document ID: US12183813B2
- Status: Granted
- Kind: B2
- Application number: 17/621,970
- Filed: 2019-08-28
- Published: 2022-08-04
- Granted: 2024-12-31
- Earliest claimed: 2019-06-27
- Assignees: Nanjing Sinnopower Technology Co., Ltd.
- Applicants: Nanjing Sinnopower Technology Co., Ltd.
- Inventors: Wenfang Du
- Web page: https://patentgrep.com/patent/US12183813B2

## CPC

- H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}
- H10D 62/102: {Constructional design considerations for preventing surface leakage or controlling electric field concentration}
- H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)}
- H10D 62/17: Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices}
- H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A cell structure and a semiconductor device using the same. The cell structure comprises a semiconductor substrate; a plurality of slot units are provided at the top end of the semiconductor substrate; a corresponding carrier barrier region is provided at the bottom of each slot unit; a conductive material is provided in each slot; source body regions are provided between the adjacent slot units; one or more source regions are closely attached on the surface of each source body region, and the source regions and the source body regions are in contact with a first metal layer at the top of the semiconductor substrate; a first semiconductor region and a second metal layer in contact with the first semiconductor region are provided at the bottom of the semiconductor substrate.

## Claims

### Claim 1

A cell structure of a semiconductor device, the cell structure comprising:
a semiconductor substrate of a first conductivity type;
a plurality of first trench units arranged in the top surface region of the semiconductor substrate, the plurality of first trench units spaced apart, a conductive material filled in the plurality of first trench units and isolated from the semiconductor substrate by a first dielectric material;
a carrier barrier region of the first conductivity type arranged to abut the bottoms of the plurality of first trench units or close to side edges of the bottoms of the plurality of first trench units and isolated from the conductive material by the first dielectric material, wherein the doping concentration of the carrier barrier region is higher than the doping concentration of the semiconductor substrate;
a first source-body region of a second conductivity type arranged in gaps among the plurality of first trench units, wherein more than one source regions of the first conductivity type are arranged in the first source-body region, wherein the first source-body region and the source regions are located in the top surface region of the semiconductor substrate;
a first metal layer arranged at the top of the semiconductor substrate, wherein the first metal layer is in contact with the first source-body region and the source regions;
a second dielectric material arranged at the top of the semiconductor substrate, adjacent to or abutting the first metal layer, wherein the second dielectric material covers some or all of the trench openings of the plurality of first trench units;
a first semiconductor region arranged in the bottom region of the semiconductor substrate;
a second metal layer arranged in contact with the first semiconductor region;
a first electric field shielding region of the a-second conductivity type arranged in the semiconductor substrate in a depth equal or close to the depth of the carrier barrier region;
a plurality of second trench units arranged in the top surface region of the semiconductor substrate and at the outer side of the plurality of first trench units, wherein the conductive material is filled in the plurality of second trench units and is isolated from the semiconductor substrate by a third dielectric material;
a second source-body region arranged in the gaps among the plurality of second trench units and located on the surface of the semiconductor substrate;
a third metal layer arranged at the top of the semiconductor substrate, wherein the third metal layer is in contact with the second source-body region and a part of the surface or the entire surface of the second source-body region contacts the third metal layer; and
a fourth dielectric material arranged at the top of the semiconductor substrate, abutting the third metal layer, the fourth dielectric material covering some or all of the trench openings of the plurality of second trench units;
wherein the first electric field shielding region is arranged to abut the bottoms of the plurality of second trench units or adjacent to the side edges of the bottoms of the plurality of second trench units, and is isolated from the conductive material by the third dielectric material.

### Claim 2 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein the number of the carrier barrier region is one, and the plurality of first trench units are in contact with the carrier barrier region together.

### Claim 3 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein a plurality of carrier barrier regions are provided, and each of the plurality of first trench units is in contact with a corresponding carrier barrier region among the plurality of carrier barrier regions.

### Claim 4 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein the widths of the trench openings of the plurality of first trench units are equal to or different from each other; and the depths of the plurality of first trench units are equal to or different from each other.

### Claim 5 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein each side edge of the first source-body region contacts with the side edge of an adjacent first trench unit, and one side of the source regions contacts the first dielectric material and the second dielectric material contact the first metal layer, and covers all the trench openings of the plurality of first trench units, and contacts some or all of the source regions.

### Claim 6 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein the first conductivity type is P-type, and the second conductivity type is N-type.

### Claim 7 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein the first conductivity type is N-type, and the second conductivity type is P-type.

### Claim 8 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein the first semiconductor region is of the first conductivity type or the second conductivity type.

### Claim 9 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein a second semiconductor region of a conductivity type identical to or different from that of the first semiconductor region is arranged at one side of the first semiconductor region.

### Claim 10 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein a third semiconductor region of a conductivity type different from the conductivity type of the first semiconductor region is arranged at a side edge of the first semiconductor region on the same layer.

### Claim 11 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein the second source-body region is of the a-first conductivity type or the a-second conductivity type.

### Claim 12 (depends on 1)

The cell structure of a semiconductor device according to claim 1, wherein the electric field shielding region and the carrier barrier region adjacent to each other either contact or do not contact each other.

### Claim 13 (depends on 1)

The cell structure of a semiconductor device according to claim 1, further comprising:
a second electric field shielding region of the second conductivity type arranged in the semiconductor substrate;
a fourth metal layer arranged at the top of the semiconductor substrate; and
a semiconductor region of the second conductivity type formed in the semiconductor substrate in the vertical direction and in contact with the second electric field shielding region and the fourth metal layer.