# US 12,183,785 B2 · Monolithic semiconductor device assemblies

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- Number: US 12,183,785 B2
- Document ID: US12183785B2
- Status: Granted
- Kind: B2
- Application number: 18/340,650
- Filed: 2023-06-23
- Published: 2023-11-02
- Granted: 2024-12-31
- Earliest claimed: 2020-07-14
- Assignees: Semiconductor Components Industries, LLC
- Applicants: Semiconductor Components Industries, LLC
- Inventors: Peter Moens; Gordon M. Grivna; Yusheng Lin
- Web page: https://patentgrep.com/patent/US12183785B2

## CPC

- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W 90/00: Package configurations
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 90/753: {between laterally-adjacent chips}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In a general aspect, a semiconductor device assembly includes a first portion of a semiconductor substrate; a second portion of the semiconductor substrate, and a semiconductor device layer disposed on the first portion of the semiconductor substrate and the second portion of the semiconductor substrate. The semiconductor device layer includes a first semiconductor device disposed on the first portion of the semiconductor substrate, and a second semiconductor device disposed on the second portion of the semiconductor substrate. The assembly also includes an isolation trench defined in the semiconductor substrate that has a dielectric material disposed therein. The isolation trench is disposed between the first portion of the semiconductor substrate and the second portion of the semiconductor substrate, and electrically isolates the first portion of the semiconductor substrate from the second portion of the semiconductor substrate. The semiconductor device layer excludes the isolation trench.

## Claims

### Claim 1

A semiconductor device assembly, comprising:
a first portion of a semiconductor substrate;
a second portion of the semiconductor substrate;
a continuous semiconductor device layer having a first surface disposed on the first portion of the semiconductor substrate and the second portion of the semiconductor substrate, the continuous semiconductor device layer having a second surface opposite the first surface, the second surface including:
a first semiconductor device disposed above the first portion of the semiconductor substrate; and
a second semiconductor device disposed above the second portion of the semiconductor substrate; and
an isolation trench defined in the semiconductor substrate and having a dielectric material disposed therein, the isolation trench being disposed:
between the first portion of the semiconductor substrate and the second portion of the semiconductor substrate,
the isolation trench electrically isolating the first portion of the semiconductor substrate from the second portion of the semiconductor substrate, the continuous semiconductor device layer excluding the isolation trench, and the first surface of the continuous semiconductor device layer being further disposed on the dielectric material.

### Claim 2 (depends on 1)

The semiconductor device assembly of claim 1, wherein:
the first semiconductor device includes a first gallium-nitride (GaN) transistor;
the second semiconductor device includes a second GaN transistor; and
the semiconductor substrate is a silicon substrate having a 111 crystal orientation.

### Claim 3 (depends on 2)

The semiconductor device assembly of claim 2, wherein the first GaN transistor and the second GaN transistor are configured as a half-bridge circuit.

### Claim 4 (depends on 1)

The semiconductor device assembly of claim 1, wherein the continuous semiconductor device layer is further disposed on the dielectric material disposed in the isolation trench.

### Claim 5 (depends on 1)

The semiconductor device assembly of claim 1, further comprising a thermally conductive dielectric material,
the first portion of the semiconductor substrate, the second portion of the semiconductor substrate and the dielectric material disposed in the isolation trench each being disposed on a same surface of the thermally conductive dielectric material.

### Claim 6 (depends on 5)

The semiconductor device assembly of claim 5, wherein the thermally conductive dielectric material includes at least one of:
a nitride ceramic material; or
a diamond coat material.

### Claim 7 (depends on 5)

The semiconductor device assembly of claim 5, wherein the thermally conductive dielectric material is a deposited material.

### Claim 8 (depends on 1)

The semiconductor device assembly of claim 1, wherein:
the continuous semiconductor device layer includes gallium nitride (GaN); and
the semiconductor substrate includes silicon.

### Claim 9 (depends on 1)

The semiconductor device assembly of claim 1, wherein the isolation trench is disposed around the first portion of the semiconductor substrate and around the second portion of the semiconductor substrate.

### Claim 10 (depends on 1)

The semiconductor device assembly of claim 1, wherein the dielectric material disposed in the isolation trench includes a molding compound.

### Claim 11 (depends on 1)

The semiconductor device assembly of claim 1, wherein the dielectric material disposed in the isolation trench includes at least one of an oxide material, a nitride material, an organic material, or a ceramic material.

### Claim 12 (depends on 1)

The semiconductor device assembly of claim 1, wherein the semiconductor device assembly is singulated along a portion of the isolation trench.

### Claim 13

A semiconductor device assembly comprising:
a first portion of a semiconductor substrate;
a second portion of the semiconductor substrate, the semiconductor substrate excluding a buried oxide layer;
a thermally conductive dielectric layer disposed on:
a surface of the first portion of the semiconductor substrate;
a surface of the second portion of the semiconductor substrate; and
a surface of a dielectric material disposed in an isolation trench, the isolation trench between disposed between the first portion of the semiconductor substrate and the second portion of the semiconductor substrate; and
a continuous semiconductor device layer having a first surface disposed on:
the first portion of the semiconductor substrate opposite the thermally conductive dielectric layer;
the second portion of the semiconductor substrate opposite the thermally conductive dielectric layer; and
the dielectric material opposite the thermally conductive dielectric layer,
the continuous semiconductor device layer having second surface opposite the first surface, the second surface including:
a first semiconductor device disposed above the first portion of the semiconductor substrate; and
a second semiconductor device disposed above the second portion of the semiconductor substrate,
the second semiconductor device being electrically coupled with the first semiconductor device.

### Claim 14 (depends on 13)

The semiconductor device assembly of claim 13, wherein the surface of the second portion of the semiconductor substrate is coplanar with the surface of the first portion of the semiconductor substrate.

### Claim 15 (depends on 13)

The semiconductor device assembly of claim 13, wherein the dielectric material includes a molding compound, the molding compound being further disposed on:
at least a portion of the first semiconductor device; and
at least a portion of the second semiconductor device.

### Claim 16 (depends on 13)

The semiconductor device assembly of claim 13, wherein the isolation trench is disposed around:
the first portion of the semiconductor substrate; and
the second portion of the semiconductor substrate.

### Claim 17 (depends on 13)

The semiconductor device assembly of claim 13, wherein:
the first semiconductor device includes a first gallium-nitride (GaN) transistor;
the second semiconductor device includes a second GaN transistor; and
the semiconductor substrate is a silicon substrate having a 111 crystal orientation.

### Claim 18 (depends on 13)

The semiconductor device assembly of claim 13, wherein:
the semiconductor substrate includes a first semiconductor material; and
the continuous semiconductor device layer includes a second semiconductor material that is different than the first semiconductor material.

### Claim 19 (depends on 1)

The semiconductor device assembly of claim 1, wherein the dielectric material disposed in the isolation trench includes at least one of:
a molding compound;
an oxide material;
a nitride material; an organic material; or
a ceramic material.

### Claim 20 (depends on 13)

The semiconductor device assembly of claim 13, wherein the thermally conductive dielectric layer includes at least one of:
a nitride ceramic material;
a diamond coat material; or
a deposited material.