# US 12,183,780 B2 · Metal-to-semiconductor contact including a 2D crystal material layer

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- Number: US 12,183,780 B2
- Document ID: US12183780B2
- Status: Granted
- Kind: B2
- Application number: 17/465,213
- Filed: 2021-09-02
- Published: 2022-08-04
- Granted: 2024-12-31
- Earliest claimed: 2021-01-29
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Yeonchoo Cho; Kyung-Eun Byun; Keunwook Shin; Hyeonjin Shin
- Web page: https://patentgrep.com/patent/US12183780B2

## CPC

- H10D 62/40: Crystalline structures
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 62/832: being Group IV materials comprising two or more elements, e.g. SiGe
- H10D 62/8325: {Silicon carbide}
- H10D 62/882: {Graphene}
- H10D 64/01: Manufacture or treatment
- H10D 64/251: {Source or drain electrodes for field-effect devices}
- H10D 64/662: {the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures}
- H10W 20/498: {Resistive arrangements or effects of, or between, wiring layers}
- H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence)
- H10D 30/637: {Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs}
- H10D 62/881: {being a two-dimensional material}
- H10D 64/647: {Schottky drain or source electrodes for IGFETs}
- H10H 20/832: characterised by their material
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor device is provided. The semiconductor device includes a metal layer, a semiconductor layer in electrical contact with the metal layer, a two-dimensional (2D) material layer disposed between the metal layer and the semiconductor layer and having a 2D crystal structure, and a metal compound layer disposed between the 2D material layer and the semiconductor layer.

## Claims

### Claim 1

A semiconductor device comprising:
a metal layer;
a semiconductor layer in electrical contact with the metal layer;
a two-dimensional (2D) material layer between the metal layer and the semiconductor layer and having a 2D crystal structure; and
a metal compound layer between the 2D material layer and the semiconductor layer,
wherein a first surface of the metal compound layer contacts the 2D material layer and a second surface different from the first surface of the metal compound layer contacts the semiconductor layer, and
wherein a difference of a reaction energy between a metal included in the metal compound layer and oxygen to a reaction energy between a semiconductor included in the semiconductor layer and oxygen is 2 eV or less,
wherein the 2D material layer includes nanocrystalline graphene (nc-G), and
wherein the metal compound layer includes both a metal oxide and a metal silicide.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the reaction energy between the metal included in the metal compound layer and oxygen is greater than the reaction energy between the semiconductor included in the semiconductor layer and oxygen.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the metal included in the metal compound layer includes at least one of magnesium (Mg), aluminum (Al), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), zirconium (Zr), niobium (Nb), molybdenum (Mo), lead (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), lanthanum (La), hafnium (Hf), tantalum (Ta), tungsten (W), iridium (Ir), platinum (Pt), gold (Au), bismuth (Bi), and ruthenium (Ru).

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein a thickness of the metal compound layer is about 5 nm or less.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the metal compound layer includes a metal-semiconductor compound.

### Claim 6 (depends on 5)

The semiconductor device of claim 5, wherein the semiconductor included in the metal-semiconductor compound is the same as a semiconductor included in the semiconductor layer.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, wherein the 2D material layer contacts both the metal layer and the metal compound layer.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the metal layer includes first and second metal layers apart from each other.

### Claim 9 (depends on 1)

The semiconductor device of claim 1, further comprising:
an insulating layer on the semiconductor layer; and
an electrode on the insulating layer.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, wherein the 2D material layer includes a transition metal dichalcogenide (TMD) compound.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein the TMD compound includes at least one of MoS2, WS2, TaS2, HfS2, ReS2, TiS2, NbS2, SnS2, MoSe2, WSe2, TaSe2, HfSe2, ReSe2, TiSe2, NbSe2, SnSe2, MoTe2, WTe2, TaTe2, HfTe2, ReTe2, TiTe2, NbTe2, and SnTe2.

### Claim 12 (depends on 1)

The semiconductor device of claim 1, wherein the 2D material layer includes at least one of TiOx, NbOx, MnOx, VaOx, MnO3, TaO3, WO3, MoCl2, CrCl3, RuCl3, BiI3, PbCl4, GeS, GaS, GeSe, GaSe, PtSe2, In2Se3, GaTe, InS, InSe, InTe, hexagonal BN (h-BN), and phosphorene.

### Claim 13 (depends on 1)

The semiconductor device of claim 1, wherein the 2D material layer has a doped structure having at least one of a substitution of some of elements included in the 2D crystal structure with other elements or having another element combined to the 2D crystal structure.

### Claim 14 (depends on 1)

The semiconductor device of claim 1, wherein a thickness of the 2D material layer is an integral multiple of a thickness of a 2D crystal structure of a single layer.

### Claim 15 (depends on 1)

The semiconductor device of claim 1, wherein the semiconductor layer includes at least one of silicon, germanium, a Group III-V compound semiconductor, a Group II-VI compound semiconductor, a Group IV-VI compound semiconductor, a Group IV-IV compound semiconductor, an oxide semiconductor, and a semiconductor having a 2D crystal structure having a band gap.

### Claim 16 (depends on 1)

The semiconductor device of claim 1, wherein a surface of the semiconductor layer in electrical contact with the metal layer includes an element having an electron affinity of 4 eV or more.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, wherein the element having an electron affinity of 4 eV or more includes a halogen element.