# US 12,183,779 B2 · Integrated circuit and method of forming the same

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- Number: US 12,183,779 B2
- Document ID: US12183779B2
- Status: Granted
- Kind: B2
- Application number: 17/462,016
- Filed: 2021-08-31
- Published: 2023-03-02
- Granted: 2024-12-31
- Earliest claimed: 2021-08-31
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Ming-Che Lee; Sheng-Chau Chen; Cheng-Yuan Tsai
- Web page: https://patentgrep.com/patent/US12183779B2

## CPC

- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/716: {having vertical extensions}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/075: {of multilayered thin functional dielectric layers}
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/496: {Capacitor integral with wiring layers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided are an integrated circuit (IC) and a method of forming the same. The IC includes a substrate; a conductive layer, disposed on the substrate; a barrier layer, disposed on the conductive layer; an etching stop layer, covering a sidewall of the barrier layer and extending on a first portion of a top surface of the barrier layer; and at least one capacitor structure, disposed on a second portion of the top surface of the barrier layer.

## Claims

### Claim 1

An integrated circuit (IC), comprising:
a substrate;
a conductive layer, disposed on the substrate;
a barrier layer, disposed on the conductive layer, wherein a first portion of a top surface of the conductive layer is covered by the barrier layer, and a second portion of the top surface of the conductive layer is exposed by the barrier layer;
an etching stop layer, covering a sidewall of the barrier layer and extending on a first portion of a top surface of the barrier layer; and
at least one capacitor structure, disposed on a second portion of the top surface of the barrier layer.

### Claim 2 (depends on 1)

The IC of claim 1, wherein the etching stop layer is in physical contact with a lower sidewall of the at least one capacitor structure.

### Claim 3 (depends on 1)

The IC of claim 1, further comprising:
a first dielectric layer, laterally surrounding the conductive layer, wherein the etching stop layer covers a top surface of the first dielectric layer and the second portion of the top surface of the conductive layer; and
a second dielectric layer, disposed on the etching stop layer, so that the etching stop layer is disposed between the first and second dielectric layers, wherein a composite layer constituted by the second dielectric layer and the etching stop layer comprises opposing sidewalls that define at least one trench, and the at least one capacitor structure is disposed within the at least one trench.

### Claim 4 (depends on 3)

The IC of claim 3, wherein the at least one capacitor structure comprises:
a lower electrode, lining a surface of the at least one trench, and electrically connected to the conductive layer by contacting the second portion of the top surface of the barrier layer;
an upper electrode, disposed over the lower electrode; and
a capacitor dielectric layer, disposed between the lower electrode and the upper electrode to separate the lower electrode from the upper electrode.

### Claim 5 (depends on 4)

The IC of claim 4, wherein the lower electrode is in physical contact with the opposing sidewalls of the composite layer constituted by the second dielectric layer and the etching stop layer.

### Claim 6 (depends on 1)

The IC of claim 1, wherein a contact area between the barrier layer and the conductive layer is greater than a contact area between the barrier layer and the at least one capacitor structure.

### Claim 7 (depends on 3)

The IC of claim 3, wherein the at least one capacitor structure comprises:
a first capacitor region, disposed within a first trench defined by opposing first sidewalls of the composite layer constituted by the second dielectric layer and the etching stop layer; and
a second capacitor region, disposed within a second trench defined by opposing second sidewalls of the composite layer constituted by the second dielectric layer and the etching stop layer, wherein a lower electrode of the at least one capacitor structure continuously extends from a surface of the first trench to cover a surface of the second trench.

### Claim 8 (depends on 1)

The IC of claim 1, wherein the substrate comprises a pixel region and a logic region, the at least one capacitor structure is disposed over the substrate in the pixel region, and a photodetector is further disposed in the substrate in the pixel region.

### Claim 9

A semiconductor structure, comprising:
a first substrate;
a photodetector, disposed in the first substrate;
an interconnect structure, disposed on the first substrate, wherein the interconnect structure comprises:
an interlayer dielectric layer, comprising opposing first sidewalls that at least partially define a first trench overlying the photodetector;
a lower conductive line, embedded in the interlayer dielectric layer, and disposed between the photodetector and the first trench; and
a barrier layer, disposed between the lower conductive line and the first trench, wherein a portion of a top surface of the barrier layer is exposed by the first trench, wherein a first portion of a top surface of the lower conductive line is covered by the barrier layer, and a second portion of the top surface of the lower conductive line is exposed by the barrier layer; and
a first capacitor, disposed within the first trench to contact the portion of the top surface of the barrier layer exposed by the first trench.

### Claim 10 (depends on 9)

The semiconductor structure of claim 9, wherein the interconnect structure further comprises: an etching stop layer covering a sidewall of the barrier layer and extending on another portion of the top surface of the barrier layer that is uncovered by the first capacitor.

### Claim 11 (depends on 10)

The semiconductor structure of claim 10, wherein the etching stop layer is in physical contact with a lower sidewall of the first capacitor.

### Claim 12 (depends on 9)

The semiconductor structure of claim 9, wherein the interconnect structure comprises: an upper conductive line disposed on the first capacitor,
wherein the interlayer dielectric layer comprises a plurality of dielectric layers, and a plurality of conductive lines are arranged in the plurality of dielectric layers,
wherein the first capacitor penetrates through the plurality of dielectric layers to connect the upper conductive line and the lower conductive line.

### Claim 13 (depends on 9)

The semiconductor structure of claim 9, wherein the first capacitor comprises:
a lower electrode, disposed within the first trench, and electrically connected to the lower conductive line by contacting the portion of the top surface of the barrier layer;
an upper electrode, disposed over the lower electrode; and
a capacitor dielectric layer, disposed between the lower electrode and the upper electrode to separate the lower electrode from the upper electrode.

### Claim 14 (depends on 13)

The semiconductor structure of claim 13, the lower electrode has a U-shaped profile within the first trench, and the upper electrode has a T-shaped profile.

### Claim 15 (depends on 9)

The semiconductor structure of claim 9, wherein the interlayer dielectric layer further comprises opposing second sidewalls that at least partially define a second trench laterally offset from the first trench, wherein a second capacitor is disposed within the second trench.

### Claim 16 (depends on 9)

The semiconductor structure of claim 9, further comprising:
a second substrate, bonded to the first substrate, so that the interconnect structure is disposed between the first and second substrates;
a metal grid, disposed on a backside of the first substrate, wherein the metal grid laterally surrounds the photodetector in a top view;
a color filter film, disposed on the metal grid; and
a microlens, disposed on the color filter film and corresponding the photodetector.

### Claim 17

A method of forming a semiconductor structure, comprising:
forming a first dielectric layer on a first substrate;
forming a conductive layer in the first dielectric layer;
forming a barrier material on the first dielectric layer and the conductive layer;
patterning a barrier material to form a barrier layer on the conductive layer, wherein a first portion of a top surface of the conductive layer is covered by the barrier layer, and a second portion of the top surface of the conductive layer is exposed by the barrier layer;
forming an etching stop layer to cover the first dielectric layer and a sidewall and a top surface of the barrier layer;
forming a second dielectric layer on the etching stop layer;
removing a portion of the second dielectric layer and a portion of the etching stop layer to form a trench in the second dielectric layer and the etching stop layer, wherein the trench exposes a second portion of the top surface of the barrier layer, while the etching stop layer extends on a first portion of the top surface of the barrier layer; and
forming a capacitor structure within the trench, so that the capacitor structure is disposed on the second portion of the top surface of the barrier layer.

### Claim 18 (depends on 17)

The method of claim 17, wherein the forming the capacitor structure comprises:
forming a lower electrode material on the barrier, the lower electrode material overlying the second dielectric layer and lining a surface of the trench;
forming a capacitor dielectric material, the capacitor dielectric material overlying the lower electrode material and lining the surface of the trench;
forming an upper electrode material, the upper electrode material overlying the capacitor dielectric material and lining the surface of the trench; and
patterning the upper electrode material to form an upper electrode, and patterning the capacitor dielectric material and the lower electrode material to form a capacitor dielectric layer and a lower electrode, wherein a length of the capacitor dielectric layer and the lower electrode extending on the second dielectric layer is greater than a length of the upper electrode extending on the second dielectric layer.

### Claim 19 (depends on 17)

The method of claim 17, wherein the barrier layer has a bottom width greater than a width of the trench.

### Claim 20 (depends on 17)

The method of claim 17, further comprising:
forming a photodetector in the first substrate before forming the first dielectric layer, wherein the photodetector corresponds the capacitor structure;
bonding a second substrate onto the first substrate after forming the capacitor structure, so that the capacitor structure is located between the second substrate and the first substrate;
thinning a backside of the first substrate to expose the photodetector;
forming a metal grid on a thinned backside of the first substrate;
forming a color filter film on the metal grid; and
forming a microlens on the color filter film.