# US 12,183,767 B2 · Complementary metal-oxide-semiconductor image sensor and method of making

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- Number: US 12,183,767 B2
- Document ID: US12183767B2
- Status: Granted
- Kind: B2
- Application number: 18/151,917
- Filed: 2023-01-09
- Published: 2023-06-22
- Granted: 2024-12-31
- Earliest claimed: 2017-09-28
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Bo-Tsung Tsai
- Web page: https://patentgrep.com/patent/US12183767B2

## CPC

- H10F 39/014: {of CMOS image sensors}
- H10F 39/8033: {Photosensitive area}
- H10F 39/80373: {characterised by the gate of the transistor}
- H10F 39/80377: {characterised by the channel of the transistor, e.g. channel having a doping gradient}
- H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence)
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/21: {of electrically active species}
- H10P 30/22: using masks
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes an isolation structure in the protrusion, wherein the isolation structure surrounds the protrusion doping region. The pixel further includes a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion.

## Claims

### Claim 1

A pixel, comprising:
a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk;
a protrusion doping region in the protrusion;
an isolation structure in the protrusion, wherein the isolation structure surrounds the protrusion doping region; and
a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion.

### Claim 2 (depends on 1)

The pixel of claim 1, wherein a width of the photosensitive device in the protrusion is greater than a width of the protrusion doping region.

### Claim 3 (depends on 1)

The pixel of claim 1, wherein the isolation structure comprises a first dopant having a first dopant type.

### Claim 4 (depends on 3)

The pixel of claim 3, further comprising a first doped region in the bulk, wherein the first doped region comprises a second dopant having a second dopant type, and the second dopant type is opposite the first dopant type.

### Claim 5 (depends on 1)

The pixel of claim 1, wherein a depth of the isolation structure in the protrusion is less than a depth of the protrusion doping region.

### Claim 6 (depends on 1)

The pixel of claim 1, further comprising a dielectric layer over the protrusion.

### Claim 7 (depends on 6)

The pixel of claim 6, wherein the dielectric layer covers the isolation structure.

### Claim 8 (depends on 6)

The pixel of claim 6, wherein the dielectric layer exposes the protrusion doping region.

### Claim 9 (depends on 1)

The pixel of claim 1, further comprising a bulk isolation structure in the bulk.

### Claim 10

A pixel, comprising:
a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk;
a protrusion doping region in the protrusion;
an isolation structure in the bulk; and
a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion, and the isolation structure is above a portion of the photosensitive device in the bulk.

### Claim 11 (depends on 10)

The pixel of claim 10, wherein the isolation structure directly contacts the photosensitive device.

### Claim 12 (depends on 10)

The pixel of claim 10, wherein the protrusion doping region is separated from the isolation structure.

### Claim 13 (depends on 10)

The pixel of claim 10, wherein the isolation structure comprises a first dopant having a first dopant type.

### Claim 14 (depends on 13)

The pixel of claim 13, further comprising a first doped region in the bulk, wherein the first doped region comprises a second dopant having a second dopant type, and the second dopant type is opposite the first dopant type.

### Claim 15 (depends on 10)

The pixel of claim 10, further comprising a bulk doping region in the bulk, wherein the isolation structure is between the bulk doping region and the photosensitive device.

### Claim 16 (depends on 15)

The pixel of claim 15, wherein a dopant type of the isolation structure is a same dopant type as the bulk doping region.

### Claim 17

A pixel, comprising:
a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk;
a protrusion doping region in the protrusion; and
a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion, and the photosensitive device extends across less than an entire width of the protrusion.

### Claim 18 (depends on 17)

The pixel of claim 17, further comprising an isolation structure in the protrusion, wherein the protrusion doping region directly contacts the isolation structure.

### Claim 19 (depends on 17)

The pixel of claim 17, further comprising an isolation structure in the bulk, wherein the photosensitive device directly contacts the isolation structure.

### Claim 20 (depends on 17)

The pixel of claim 17, wherein the photosensitive device extends along a single sidewall of the protrusion.