# US 12,183,762 B2 · Image sensing device

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- Number: US 12,183,762 B2
- Document ID: US12183762B2
- Status: Granted
- Kind: B2
- Application number: 17/870,540
- Filed: 2022-07-21
- Published: 2023-02-16
- Granted: 2024-12-31
- Earliest claimed: 2021-08-12
- Assignees: SK hynix Inc.
- Applicants: SK hynix Inc.
- Inventors: Jae Hyung Jang; Jong Chae Kim; Jae Won Lee
- Web page: https://patentgrep.com/patent/US12183762B2

## CPC

- H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}
- G01S 7/4863: Detector arrays, e.g. charge-transfer gates
- G01S 17/894: Three-dimensional [3D] imaging with simultaneous measurement of time-of-flight at a two-dimensional [2D] array of receiver pixels, e.g. time-of-flight cameras or flash lidar
- H04N 25/63: applied to dark current
- H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01S: RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION

## Abstract

An image sensing device may include a pixel array. The pixel array includes a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light, a bias field region doped with impurities and disposed along an edge of the sensing region and a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.

## Claims

### Claim 1

An image sensing device comprising:
a pixel array
wherein the pixel array includes:
a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light;
a bias field region doped with impurities and disposed along an edge of the sensing region; and
a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.

### Claim 2 (depends on 1)

The image sensing device according to claim 1, wherein the pixel array further includes:
a passivation region formed to overlap the sensing region,
wherein the pixel array is formed in a semiconductor layer, wherein the bias field region is located at a first depth within the semiconductor layer and the passivation region is located at a second depth within the semiconductor layer, and wherein the first depth is greater than the second depth.

### Claim 3 (depends on 2)

The image sensing device according to claim 2, wherein:
the bias field region is formed to surround the passivation region; and
the bias field region is formed to contact the contact portion.

### Claim 4 (depends on 2)

The image sensing device according to claim 2, wherein:
the bias field region is disposed along an edge of the passivation region; and
the passivation region is formed to overlap the bias field region.

### Claim 5 (depends on 1)

The image sensing device according to claim 1, wherein each of the unit pixels includes:
a control region configured to generate a current in the semiconductor layer in which the unit pixels are disposed; and
a detection region configured to capture the photocharges moving by the current.

### Claim 6 (depends on 5)

The image sensing device according to claim 5, wherein:
a demodulation control signal is applied to the control region,
wherein the demodulation control signal is formed by repeating a first voltage and a second voltage at predetermined time intervals.

### Claim 7 (depends on 6)

The image sensing device according to claim 6, wherein:
the demodulation control signal is any one of two different demodulation control signals having a phase difference of 180 degrees therebetween.

### Claim 8 (depends on 6)

The image sensing device according to claim 6, wherein:
the demodulation control signal is any one of four different demodulation control signals having a phase difference of 90 degrees therebetween.

### Claim 9 (depends on 6)

The image sensing device according to claim 6, wherein:
the photocharges move in a direction from the bias field region to the control region.

### Claim 10 (depends on 6)

The image sensing device according to claim 6, wherein:
the bias voltage is lower than each of the first voltage and the second voltage.

### Claim 11

An image sensing device comprising:
a sensing region including a plurality of unit pixels, each unit pixel including a control region for receiving a first voltage or a second voltage and a detection region for capturing electrons moving by the first voltage or the second voltage;
a bias field region disposed along an edge of the sensing region;
a contact portion connected to the bias field region to apply a bias voltage to the bias field region; and
a bias voltage controller configured to transfer the bias voltage to the contact portion,
wherein the bias voltage is lower than each of the first voltage and the second voltage.

### Claim 12 (depends on 11)

The image sensing device according to claim 11, further comprising:
a passivation region formed to overlap the sensing region,
wherein the bias field region is located at a first depth within a semiconductor layer and the passivation region is located at a second depth within the semiconductor layer, and wherein the first depth is greater than the second depth.

### Claim 13 (depends on 12)

The image sensing device according to claim 12, wherein:
the bias field region is formed to surround the passivation region; and
the bias field region is formed to contact the contact portion.

### Claim 14 (depends on 12)

The image sensing device according to claim 12, wherein:
the bias field region is disposed along an edge of the passivation region; and
the passivation region is formed to overlap the bias field region.

### Claim 15

An image sensing device comprising:
a sensing region including a plurality of unit pixels formed in a substrate to generate the photocharges and capture the generated photocharges;
a bias field region doped with a first impurity and formed from a surface of the substrate to a first depth in the substrate along an edge of the sensing region;
a passivation region doped with a first impurity and formed from the surface of the substrate to a second depth in the substrate over the sensing region; and
a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharges,
wherein the first depth is greater than the second depth.

### Claim 16 (depends on 15)

The image sensing device according to claim 15, wherein:
the bias field region is formed to surround the passivation region; and
the bias field region is formed to contact the contact portion.

### Claim 17 (depends on 15)

The image sensing device according to claim 15, wherein:
the bias field region is disposed along an edge of the passivation region; and
the passivation region is formed to overlap the bias field region.

### Claim 18 (depends on 15)

The image sensing device according to claim 15, wherein each of the unit pixels includes:
a control region configured to generate a current in the semiconductor layer in which the unit pixels are disposed; and
a detection region configured to capture the photocharges moving by the current.