# US 12,183,760 B2 · Imaging device

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- Number: US 12,183,760 B2
- Document ID: US12183760B2
- Status: Granted
- Kind: B2
- Application number: 18/398,746
- Filed: 2023-12-28
- Published: 2024-06-20
- Granted: 2024-12-31
- Earliest claimed: 2019-06-26
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: Takeyoshi Komoto; Masahiko Nakamizo; Toshiaki Ono; Tomonori Yamashita
- Web page: https://patentgrep.com/patent/US12183760B2

## CPC

- H10F 39/811: {Interconnections}
- H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}
- H04N 25/00: Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N 25/75: Circuitry for providing, modifying or processing image signals from the pixel array
- H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
- H04N 25/79: Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
- H10F 39/018: {of hybrid image sensors}
- H10F 39/182: {Colour image sensors}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/809: {of hybrid image sensors}
- H10W 20/423: {Shielding layers}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An imaging device of an embodiment has a first substrate, a second substrate, a wire, and a trench. The first substrate has a pixel having a photodiode and a floating diffusion that holds a charge converted by the photodiode. The second substrate has a pixel circuit that reads a pixel signal based on the charge held in the floating diffusion in the pixel, and is stacked on the first substrate. The wire penetrates the first substrate and the second substrate in a stacking direction, and electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate. The trench is formed at least in the second substrate, runs in parallel with the wire, and has a depth equal to or greater than the thickness of a semiconductor layer in the second substrate.

## Claims

### Claim 1

An imaging device, comprising:
a first substrate that has a pixel having a photodiode and a floating diffusion that holds a charge converted by the photodiode;
a second substrate that has a pixel circuit and is stacked on the first substrate, the pixel circuit reading a pixel signal based on the charge held in the floating diffusion in the pixel,
wherein the second substrate is stacked on the first substrate;
a floating diffusion conductor that includes at least a first wiring in the first substrate and a second wiring in the second substrate and electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate; and
a wire that electrically connects a gate of the amplification transistor and the floating diffusion.

### Claim 2 (depends on 1)

The imaging device according to claim 1, wherein the gate of the amplification transistor is connected to the floating diffusion conductor.

### Claim 3 (depends on 1)

The imaging device according to claim 1, further comprising a selection transistor provided in the pixel circuit of the second substrate, wherein a source of the amplification transistor is connected to a drain of the selection transistor.

### Claim 4 (depends on 1)

The imaging device according to claim 1, further comprising a shield wire, wherein the shield wire includes a first portion and a second portion.

### Claim 5 (depends on 4)

The imaging device according to claim 4, wherein the first portion of the shield wire is provided on a first side of the floating diffusion conductor and the second portion of the shield wire is provided on a second side of the floating diffusion conductor, opposite to the first side.

### Claim 6 (depends on 5)

The imaging device according to claim 5, wherein the first portion of the shield wire and the second portion of the shield wire are provided around a periphery of the floating diffusion conductor.

### Claim 7 (depends on 5)

The imaging device according to claim 5, wherein the first portion of the shield wire and the second portion of the shield wire are provided in parallel with the floating diffusion conductor.

### Claim 8 (depends on 5)

The imaging device according to claim 5, wherein the first substrate includes a semiconductor layer and a first wiring layer and the second substrate includes the pixel circuit and a second wiring layer, and wherein the first wiring layer and the second wiring layer are provided between the semiconductor layer and the pixel circuit.

### Claim 9 (depends on 8)

The imaging device according to claim 8, wherein each of the first portion of the shield wire and the second portion of the shield wire extend through each of the first wiring layer and the second wiring layer.

### Claim 10 (depends on 9)

The imaging device according to claim 9, wherein the first wiring layer and the second wiring layer are coupled by a copper-copper junction.

### Claim 11 (depends on 10)

The imaging device according to claim 10, wherein each of the first portion of the shield wire and the second portion of the shield wire extend through each of the first wiring layer and the second wiring layer through the copper-copper junction.

### Claim 12 (depends on 4)

The imaging device according to claim 4, wherein the shield wire is electrically connected to a source of the amplification transistor.

### Claim 13 (depends on 1)

The imaging device according to claim 1, wherein a coupling capacitance between the floating diffusion and a source of the amplification transistor is larger than a coupling capacitance between the floating diffusion and the floating diffusion conductor.

### Claim 14 (depends on 1)

The imaging device according to claim 1, wherein the first wiring of the floating diffusion conductor contacts the second wiring of the floating diffusion conductor at an interface between the first substrate and the second substrate.

### Claim 15

An electronic equipment, comprising:
an optical system;
an imaging device that receives light from the optical system, the imaging device, comprising:
a first substrate that has a pixel having a photodiode and a floating diffusion that holds a charge converted by the photodiode;
a second substrate that has a pixel circuit and is stacked on the first substrate, the pixel circuit reading a pixel signal based on the charge held in the floating diffusion in the pixel,
wherein the second substrate is stacked on the first substrate;
a floating diffusion conductor that penetrates the first substrate and the second substrate and electrically connects the floating diffusion in the first substrate to an amplification transistor in the pixel circuit of the second substrate; and
a wire that electrically connects a gate of the amplification transistor and the floating diffusion; and
a digital signal processor that processes signals received from the imaging device.

### Claim 16 (depends on 15)

The electronic equipment according to claim 15, wherein the gate of the amplification transistor is connected to the floating diffusion conductor.

### Claim 17 (depends on 15)

The electronic equipment according to claim 15, further comprising a selection transistor provided in the pixel circuit of the second substrate, wherein a source of the amplification transistor is connected to a drain of the selection transistor.

### Claim 18 (depends on 15)

The electronic equipment according to claim 15, further comprising a shield wire, wherein the shield wire includes a first portion and a second portion.

### Claim 19 (depends on 18)

The electronic equipment according to claim 18, wherein the first portion of the shield wire is provided on a first side of the floating diffusion conductor and the second portion of the shield wire is provided on a second side of the floating diffusion conductor, opposite to the first side.

### Claim 20 (depends on 19)

The electronic equipment according to claim 19, wherein the first portion of the shield wire and the second portion of the shield wire are provided around a periphery of the floating diffusion conductor.

### Claim 21 (depends on 19)

The electronic equipment according to claim 19, wherein the first portion of the shield wire and the second portion of the shield wire are provided in parallel with the floating diffusion conductor.

### Claim 22 (depends on 19)

The electronic equipment according to claim 19, wherein the first substrate includes a semiconductor layer and a first wiring layer and the second substrate includes the pixel circuit and a second wiring layer and wherein the first wiring layer and the second wiring layer are provided between the semiconductor layer and the pixel circuit.