# US 12,183,746 B2 · Display device

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- Number: US 12,183,746 B2
- Document ID: US12183746B2
- Status: Granted
- Kind: B2
- Application number: 18/306,975
- Filed: 2023-04-25
- Published: 2023-08-24
- Granted: 2024-12-31
- Earliest claimed: 2020-05-26
- Assignees: Innolux Corporation
- Applicants: Innolux Corporation
- Inventors: Ming-Jou Tai; Chia-Hao Tsai
- Web page: https://patentgrep.com/patent/US12183746B2

## CPC

- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 86/431: {having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT]
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An electronic device includes a substrate, a scan line, a transistor, a first insulating layer, a pad, a second insulating layer, and an electrode. The scan line is disposed on the substrate and extends in a first direction. The transistor is disposed on the substrate and includes a drain. The first insulating layer is disposed on the transistor and includes a first contact hole. The pad is disposed on the first insulating layer and adjacent to the scan line, and the pad contacts the drain through the first contact hole. The second insulating layer is disposed on the pad and includes a second contact hole. The electrode is disposed on the second insulating layer and contacts the pad through the second contact hole. The pad overlaps the first contact hole and second contact hole continuously in a direction perpendicular to the first direction.

## Claims

### Claim 1

An electronic device, comprising:
a substrate;
a scan line disposed on the substrate and extending in a first direction;
a transistor disposed on the substrate and comprising a drain electrode and a semiconductor layer, wherein the drain electrode and the semiconductor layer are different layers;
a first insulating layer disposed on the transistor and comprising a first contact hole;
a pad disposed on the first insulating layer and adjacent to the scan line, wherein the pad contacts the drain electrode through the first contact hole;
a second insulating layer disposed on the pad and comprising a second contact hole; and
an electrode disposed on the second insulating layer and contacting the pad through the second contact hole;
wherein the pad overlaps the first contact hole and the second contact hole continuously in a direction different from the first direction,
wherein the semiconductor layer has a U-shaped portion,
wherein there is a distance between the first contact hole and the second contact hole in a top view of the electronic device, and the distance is greater than zero,
wherein the first contact hole and the second contact hole are respectively disposed on two opposite sides of the scan line in the top view of the electronic device.

### Claim 2 (depends on 1)

The electronic device according to claim 1, wherein an area of the pad is larger than an area of the drain electrode.

### Claim 3 (depends on 1)

The electronic device according to claim 1, wherein in a top view of the electronic device, the first contact hole does not overlap the second contact hole.

### Claim 4 (depends on 1)

The electronic device according to claim 1, wherein the pad comprises a metal material.

### Claim 5 (depends on 1)

The electronic device according to claim 1, wherein the semiconductor layer has a bent portion.

### Claim 6 (depends on 1)

The electronic device according to claim 1, further comprising a data line extending in the direction perpendicular to the first direction, wherein a portion of the semiconductor layer is overlapped with the data line.

### Claim 7 (depends on 1)

The electronic device according to claim 1, wherein the semiconductor layer comprises a material of amorphous silicon, polysilicon, or metal oxide.

### Claim 8 (depends on 1)

The electronic device according to claim 1, wherein the transistor has a top gate structure.