# US 12,183,687 B2 · Semiconductor device and method using an EMI-absorbing metal bar

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- Number: US 12,183,687 B2
- Document ID: US12183687B2
- Status: Granted
- Kind: B2
- Application number: 17/658,240
- Filed: 2022-04-06
- Published: 2023-10-12
- Granted: 2024-12-31
- Earliest claimed: 2022-04-06
- Assignees: STATS ChipPAC Pte. Ltd.
- Applicants: STATS ChipPAC Pte. Ltd.
- Inventors: KyouYong Han; WonJung Kim; WoongHui Park
- Web page: https://patentgrep.com/patent/US12183687B2

## CPC

- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/273: {the arrangements being between laterally adjacent chips, e.g. walls between chips}
- H10W 42/276: {the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation}
- H10W 90/00: Package configurations
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/685: comprising multiple insulating layers
- H10W 72/072: {of bump connectors}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device has a substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. A metal bar has an EMI-absorbing material disposed over the metal bar. The metal bar is disposed over the substrate between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first semiconductor die, second semiconductor die, and metal bar. A shielding layer is formed over the encapsulant.

## Claims

### Claim 1

A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first semiconductor die and second semiconductor die over the substrate;
providing a metal bar;
disposing an EMI-absorbing material over the metal bar;
disposing the metal bar over the substrate between the first semiconductor die and second semiconductor die after disposing the EMI-absorbing material over the metal bar;
depositing an encapsulant over the first semiconductor die, second semiconductor die, and metal bar; and
forming a shielding layer over the encapsulant.

### Claim 2 (depends on 1)

The method of claim 1, further including forming a trench in the encapsulant prior to forming the shielding layer.

### Claim 3 (depends on 1)

The method of claim 1, further including forming a protection layer over the EMI-absorbing material.

### Claim 4 (depends on 1)

The method of claim 1, further including forming a wetting layer between the metal bar and EMI-absorbing material.

### Claim 5 (depends on 1)

The method of claim 1, wherein the EMI-absorbing material includes nickel.

### Claim 6 (depends on 1)

The method of claim 1, wherein the EMI-absorbing material includes a polymeric base and magnetic metal flakes disposed in the polymeric base.

### Claim 7 (depends on 1)

The method of claim 1, wherein the shielding layer physically contacts the metal bar.

### Claim 8

A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first electronic component and second electronic component over the substrate;
providing a metal bar;
disposing an EMI-absorbing material over the metal bar to form an EMI-absorbing metal bar; and
disposing the metal bar over the substrate between the first electronic component and second electronic component after disposing the EMI-absorbing material over the metal bar.

### Claim 9 (depends on 8)

The method of claim 8, further including forming a shielding layer over the first electronic component, second electronic component, and EMI-absorbing metal bar.

### Claim 10 (depends on 9)

The method of claim 9, wherein the shielding layer physically contacts the EMI-absorbing metal bar.

### Claim 11 (depends on 8)

The method of claim 8, further including forming a protection layer over the EMI-absorbing material.

### Claim 12 (depends on 11)

The method of claim 11, further including forming a wetting layer between the metal bar and EMI-absorbing material.

### Claim 13 (depends on 12)

The method of claim 12, wherein the protection layer and wetting layer both include stainless steel.

### Claim 14 (depends on 8)

The method of claim 8, wherein the EMI-absorbing material includes nickel.

### Claim 15 (depends on 8)

The method of claim 8, further including:
depositing an encapsulant over the substrate, metal bar, and EMI-absorbing material; and
forming a shielding layer over the encapsulant.

### Claim 16

A method of making a semiconductor device, comprising:
providing a substrate;
providing a metal bar;
disposing an EMI-absorbing material over the metal bar to form an EMI-absorbing metal bar; and
disposing the metal bar over the substrate after disposing the EMI-absorbing material over the metal bar.

### Claim 17 (depends on 16)

The method of claim 16, further including:
depositing an encapsulant over the EMI-absorbing metal bar and substrate; and
forming a shielding layer over the encapsulant.

### Claim 18 (depends on 17)

The method of claim 17, wherein the shielding layer physically contacts the EMI-absorbing metal bar.

### Claim 19 (depends on 16)

The method of claim 16, further including forming a protection layer over the EMI-absorbing material.

### Claim 20 (depends on 19)

The method of claim 19, further including forming a wetting layer between the metal bar and EMI- absorbing material.

### Claim 21 (depends on 16)

The method of claim 16, wherein the EMI-absorbing material includes nickel.