# US 12,183,684 B2 · Semiconductor device packaging methods > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,684 B2 - Document ID: US12183684B2 - Status: Granted - Kind: B2 - Application number: 17/511,380 - Filed: 2021-10-26 - Published: 2023-04-27 - Granted: 2024-12-31 - Earliest claimed: 2021-10-26 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Mukhles Sowwan; Samer Banna - Web page: https://patentgrep.com/patent/US12183684B2 ## CPC - H10W 70/65: Shapes or dispositions of interconnections - H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) - H10W 70/095: {of vias therein} - H10W 70/611: {for connecting multiple chips together} - H10W 70/685: comprising multiple insulating layers - H10W 90/00: Package configurations - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 70/614: {the multiple chips being integrally enclosed} - H10W 70/635: {Through-vias} - H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills - H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts} - H10W 90/722: {between stacked chips} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor device package. In certain embodiments, a glass or silicon substrate is patterned by laser ablation to form structures for subsequent formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor device package, which may have one or more embedded dies therein. In certain embodiments, an insulating layer is formed over the substrate by laminating a pre-structured insulating film thereon. The insulating film may be pre-structured by laser ablation to form structures therein, followed by selective curing of sidewalls of the formed structures. ## Claims ### Claim 1 A method of forming a semiconductor device package, comprising: placing a pre-structured insulating film over a patterned substrate, the pre-structured insulating film comprising a flowable, polymer-based dielectric material, wherein the patterned substrate comprises one or more features formed in a silicon substrate, the one or more features comprising a first via and a cavity, wherein a semiconductor die is placed into the cavity prior to placement of the pre-structured insulating film over the patterned substrate, and the pre-structured insulating film further comprising a second via formed therein, the second via aligned with the first via upon placement of the pre-structured insulating film; laminating the pre-structured insulating film onto the patterned substrate; curing the pre-structured insulating film; and forming a conductive layer extending through the first via and the second via. ### Claim 2 (depends on 1) The method of claim 1, further comprising forming the first via in the patterned substrate via a laser ablation process. ### Claim 3 (depends on 1) The method of claim 1, further comprising: structuring an insulating film to form the pre-structured insulating film, the structuring comprising: patterning one or more features into the insulating film via laser ablation, the one or more features comprising the second via; and selectively curing sidewalls of the features patterned into the insulating film to harden the sidewalls. ### Claim 4 (depends on 1) The method of claim 1, wherein the pre-structured insulating film comprises an epoxy resin. ### Claim 5 (depends on 4) The method of claim 4, wherein the epoxy resin comprises ceramic particles. ### Claim 6 (depends on 1) The method of claim 1, wherein lamination of the pre-structured insulating film onto the patterned substrate causes the flowable, polymer-based dielectric material to fill gaps between surfaces of the semiconductor die and surfaces of the cavity. ### Claim 7 A method of forming a semiconductor device package, comprising: patterning one or more features into a silicon substrate, the one or more features comprising at least a first via and a cavity, wherein a semiconductor die is placed into the cavity prior to placement of the pre-structured insulating film over the patterned substrate; placing the silicon substrate onto a first pre-structured insulating film, the first pre-structured insulating film comprising a second via, the second via aligned with the first via upon placement of the silicon substrate; placing a second pre-structured insulating film over the silicon substrate, the second pre-structured insulating film comprising a third via, the third via aligned with the first via upon placement of the second pre-structured insulating film; laminating the first pre-structured insulating film and the second pre-structured insulating film onto the silicon substrate; curing the first pre-structured insulating film and the second pre-structured insulating film; and forming a conductive layer extending through at least the first via, the second via, and the third via. ### Claim 8 (depends on 7) The method of claim 7, wherein the silicon substrate is pattered via laser ablation. ### Claim 9 (depends on 7) The method of claim 7, further comprising: structuring an insulating film to form the first or second pre-structured insulating film, the structuring comprising: patterning one or more features into the insulating film via laser ablation, the one or more features comprising the second via; and selectively curing sidewalls of the features patterned into the insulating film to harden the sidewalls. ### Claim 10 (depends on 7) The method of claim 7, wherein the first or second pre-structured insulating film comprises an epoxy resin. ### Claim 11 (depends on 10) The method of claim 10, wherein the epoxy resin comprises ceramic particles. ### Claim 12 (depends on 7) The method of claim 7, wherein lamination of the pre-structured insulating film onto the silicon substrate causes the flowable, polymer-based dielectric material to fill gaps between surfaces of the semiconductor die and surfaces of the cavity. ### Claim 13 A method of forming a semiconductor device package, comprising: patterning one or more features into a silicon substrate, the one or more features comprising at least a first via; placing the silicon substrate onto a first pre-structured insulating film, the first pre-structured insulating film comprising a second via, the second via aligned with the first via upon placement of the silicon substrate; exposing the first pre-structured insulating film and the silicon substrate to a first lamination process; placing a second pre-structured insulating film over the silicon substrate, the second pre-structured insulating film comprising a third via, the third via aligned with the first via upon placement of the second pre-structured insulating film; exposing the first pre-structured insulating film, the substrate, and the second pre-structured insulating film to a second lamination process; curing the first pre-structured insulating film and the second pre-structured insulating film; and forming a conductive layer extending through at least the first via, the second via, and the third via. ### Claim 14 (depends on 13) The method of claim 13, further comprising: structuring an insulating film to form the first or second pre-structured insulating film, the structuring comprising: patterning one or more features into the insulating film via laser ablation, the one or more features comprising the second via; and selectively curing sidewalls of the features patterned into the insulating film to harden the sidewalls. ### Claim 15 (depends on 13) The method of claim 13, wherein the first pre-structured insulating film or the second pre-structured insulating film comprises an epoxy resin. ### Claim 16 (depends on 15) The method of claim 15, wherein the epoxy resin comprises ceramic particles. ### Claim 17 (depends on 13) The method of claim 13, wherein the one or more features patterned into the silicon substrate further comprise a cavity, and wherein a semiconductor die is placed within the cavity prior to placement of the first pre-structured insulating film or the second pre-structured insulating film over the silicon substrate. ### Claim 18 (depends on 17) The method of claim 17, wherein lamination of the pre-structured insulating film onto the substrate causes the flowable, polymer-based dielectric material to fill gaps between surfaces of the semiconductor die and surfaces of the cavity.