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US 12,183,676 B2Granted
Semiconductor device for RF integrated circuit
AssigneeMonde Wireless Inc.
InventorsBrian Romanczyk, Matthew Guidry
Life of this patent
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Abstract
In order to reduce costs as well as to effectively dissipate heat in certain RF circuits, a semiconductor device of the circuit can include one or more active devices such as transistors, diodes, and/or varactors formed of a first semiconductor material system integrated onto (e.g., bonded to) a base substrate formed of a second semiconductor material system that includes other circuit components. The first semiconductor material system can, for example, be the III-V or III-N semiconductor system, and the second semiconductor material system can, for example be silicon.
Claims20
A semiconductor device, comprising:
- a base substrate comprising a front side and a back side opposite the front side;
- and
- a transistor structure connected to the base substrate, the transistor structure comprising:
- a III-N material structure, comprising:
- a III-N barrier layer;
- a III-N channel layer on an N-face of the III-N barrier layer, wherein the III-N barrier layer has a larger bandgap than the III-N channel layer;
- and
- a 2DEG channel in the III-N channel layer adjacent to the interface between the III-N channel layer and the III-N barrier layer;
- and
- a plurality of contacts, the plurality of contacts comprising a source contact, a drain contact, and a gate contact, wherein the source, gate, and drain contacts are on an opposite side of the III-N channel layer from the III-N barrier layer, and the source and drain contacts are electrically connected to the 2DEG channel;
- wherein a top of the transistor structure is bonded to the front side of the base substrate;
- wherein at least one contact of the plurality of contacts comprises a plurality of fingers that are electrically isolated from one another within the transistor structure, wherein the fingers are electrically coupled to one another within the semiconductor device by virtue of one or more electrical connections within a base structure made by the top of the transistor structure being bonded to the front side of the base structure, such that the semiconductor device is configured as a radio frequency transistor.
9 more elements
Dependencies are inferred from the claim text.