# US 12,183,669 B2 · Configurable metal—insulator—metal capacitor and devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,669 B2 - Document ID: US12183669B2 - Status: Granted - Kind: B2 - Application number: 17/554,971 - Filed: 2021-12-17 - Published: 2023-06-22 - Granted: 2024-12-31 - Earliest claimed: 2021-12-17 - Assignees: MACOM Technology Solutions Holdings, Inc. - Applicants: Wolfspeed, Inc. - Inventors: Jeremy Fisher - Web page: https://patentgrep.com/patent/US12183669B2 ## CPC - H10W 20/496: {Capacitor integral with wiring layers} - H10D 1/68: Capacitors having no potential barriers - H10D 1/692: {Electrodes} - H10D 84/212: {of only capacitors} - H10W 20/42: Vias, e.g. via plugs - H10W 44/601: {Capacitive arrangements (H10W44/20 takes precedence)} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A metal-insulator-metal (MIM) capacitor component that includes a substrate, where the metal-insulator-metal (MIM) capacitor component is configured to form a first capacitor with a top metal and a first bottom metal having a dielectric layer therebetween; and where the metal-insulator-metal (MIM) capacitor component is configured to form a second capacitor with the top metal and a second bottom metal having the dielectric layer therebetween. Additionally, the top metal, the dielectric layer, the first bottom metal, and the second bottom metal are arranged on the substrate. ## Claims ### Claim 1 A metal-insulator-metal (MIM) capacitor component comprising: a substrate; a first bottom metal arranged on the substrate; a second bottom metal arranged on the substrate; a dielectric layer arranged on the first bottom metal and the second bottom metal; a top metal arranged on the dielectric layer; a first metallization layer electrically coupled to the first bottom metal and arranged beneath the substrate; and a second metallization layer electrically coupled to the second bottom metal and arranged beneath the substrate, wherein the first metallization layer and the second metallization layer are located on a lower surface of the substrate; wherein the metal-insulator-metal (MIM) capacitor component is configured to form a first capacitor with the top metal and the first bottom metal having the dielectric layer therebetween; wherein the metal-insulator-metal (MIM) capacitor component is configured to form a second capacitor with the top metal and the second bottom metal having the dielectric layer therebetween; and wherein the top metal, the dielectric layer, the first bottom metal, and the second bottom metal are arranged on the substrate. ### Claim 2 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 wherein a center portion of the top metal along a first axis is arranged between and vertically above the first bottom metal and the second bottom metal, wherein the top metal is arranged on the dielectric layer, the first bottom metal is arranged on the substrate, and the second bottom metal is arranged on the substrate. ### Claim 3 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 wherein the substrate comprises silicon carbide (SIC). ### Claim 4 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 wherein the first bottom metal and the second bottom metal are arranged on an upper surface of the substrate. ### Claim 5 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 wherein: the dielectric layer is arranged on the first bottom metal and the second bottom metal; and the top metal is arranged on the dielectric layer. ### Claim 6 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 wherein the dielectric layer is segmented. ### Claim 7 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 further comprising: a first electrical connection configured to electrically connect the first metallization layer to the first bottom metal; and a second electrical connection configured to electrically connect the second metallization layer to the second bottom metal. ### Claim 8 (depends on 7) The metal-insulator-metal (MIM) capacitor component according to claim 7 wherein the first electrical connection and the second electrical connection comprise vias. ### Claim 9 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 wherein the metal-insulator-metal (MIM) capacitor component is configured to be implemented as a shunt capacitor. ### Claim 10 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 wherein the metal-insulator-metal (MIM) capacitor component is configured to be implemented as a series capacitor. ### Claim 11 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 wherein the first metallization layer is configured to form a first connection, the top metal is configured to form a second connection, and the second metallization layer is configured to form a third connection. ### Claim 12 (depends on 1) The metal-insulator-metal (MIM) capacitor component according to claim 1 further comprising a plurality of the top metal, the first bottom metal, and the second bottom metal configured to implement multiple separate capacitor implementations. ### Claim 13 (depends on 1) A device comprising the metal-insulator-metal (MIM) capacitor component according to claim 1 and further comprising: a support component that comprises at least one of the following: a printed circuit board, a Monolithic Microwave Integrated Circuit (MMIC), and a support; and one or more connections on a surface of the support component configured to connect to the metal-insulator-metal (MIM) capacitor component. ### Claim 14 (depends on 1) A device comprising the metal-insulator-metal (MIM) capacitor component according to claim 1 implemented as part of at least one of the following: a ladder configuration, a voltage multiplier configuration, and/or a voltage divider configuration. ### Claim 15 A metal-insulator-metal (MIM) capacitor component comprising: a substrate; a first bottom metal arranged on the substrate; a second bottom metal arranged on the substrate; a dielectric layer arranged on the first bottom metal and the second bottom metal; a top metal arranged on the dielectric layer; a first metallization layer electrically coupled to the first bottom metal and arranged beneath the substrate; and a second metallization layer electrically coupled to the second bottom metal and arranged beneath the substrate, wherein the first metallization layer and the second metallization layer are located on a lower surface of the substrate; wherein the top metal and the first bottom metal are configured to form a first capacitor; wherein the top metal and the second bottom metal are configured to form a second capacitor; and wherein the top metal, the dielectric layer, the first bottom metal, and the second bottom metal are arranged on the substrate. ### Claim 16 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 wherein a center portion of the top metal along a first axis is arranged between the first bottom metal and the second bottom metal, wherein the top metal is arranged on the dielectric layer, the first bottom metal is arranged on the substrate, and the second bottom metal is arranged on the substrate. ### Claim 17 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 wherein the substrate comprises silicon carbide (SiC). ### Claim 18 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 wherein the first bottom metal and the second bottom metal are arranged on an upper surface of the substrate. ### Claim 19 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 wherein: the dielectric layer is arranged on the first bottom metal and the second bottom metal; and the top metal is arranged on the dielectric layer. ### Claim 20 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 wherein the dielectric layer is segmented. ### Claim 21 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 further comprising: a first electrical connection configured to electrically connect the first metallization layer to the first bottom metal; and a second electrical connection configured to electrically connect the second metallization layer to the second bottom metal. ### Claim 22 (depends on 21) The metal-insulator-metal (MIM) capacitor component according to claim 21 wherein the first electrical connection and the second electrical connection comprise vias. ### Claim 23 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 wherein the metal-insulator-metal (MIM) capacitor component is configured to be implemented as a shunt capacitor. ### Claim 24 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 wherein the metal-insulator-metal (MIM) capacitor component is configured to be implemented as a series capacitor. ### Claim 25 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 wherein the first metallization layer is configured to form a first connection, the top metal is configured to form a second connection, and the second metallization layer is configured to form a third connection. ### Claim 26 (depends on 15) The metal-insulator-metal (MIM) capacitor component according to claim 15 further comprising a plurality of the top metal, the first bottom metal, and the second bottom metal configured to implement multiple separate capacitor implementations. ### Claim 27 (depends on 15) A device comprising the metal-insulator-metal (MIM) capacitor component according to claim 15 and further comprising: a support component that comprises at least one of the following: a printed circuit board, a Monolithic Microwave Integrated Circuit (MMIC), and a support; and one or more connections on a surface of the support component configured to connect to the metal-insulator-metal (MIM) capacitor component. ### Claim 28 (depends on 15) A device comprising the metal-insulator-metal (MIM) capacitor component according to claim 15 implemented as part of at least one of the following: a ladder configuration, a voltage multiplier configuration, and/or a voltage divider configuration.