Through electrode substrate and semiconductor device

A through electrode substrate comprising:

• a substrate having a first face and a second face, the substrate having a through hole extending through between the first face and the second face, a diameter of the through hole not having a minimum value inside of the through hole, such that the inside of the through hole is defined by an area between a top edge of a first opening of the through hole and a bottom edge of a second opening of the through hole;
• and
• a conductor arranged along an inner face of the through hole, wherein
• an insulation region surrounded by the conductor is arranged inside the through hole,
• the through hole has a shape such that a first inclination angle to an eighth inclination angle at a first position to an eighth position are decreasing gradually,
• each of the first inclination angle to the eighth inclination angle is an angle of the inner face with respect to a center axis of the through hole, and an angle expanding toward the first face is defined as a positive, and
• the first position to the eighth position corresponds to positions at distances of 6.25%, 18.75%, 31.25%, 43.75%, 56.25%, 68.75%, 81.25%, and 93.75%, respectively, from the first face in a section from the first face to the second face.