# US 12,183,656 B2 · Thermally conductive sheet and method of manufacturing semiconductor device

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- Number: US 12,183,656 B2
- Document ID: US12183656B2
- Status: Granted
- Kind: B2
- Application number: 17/818,044
- Filed: 2022-08-08
- Published: 2022-12-01
- Granted: 2024-12-31
- Earliest claimed: 2022-08-08
- Assignees: Resonac Corporation
- Applicants: Resonac Corporation
- Inventors: Mika Kobune; Michiaki Yajima
- Web page: https://patentgrep.com/patent/US12183656B2

## CPC

- H10W 40/251: {Organics}
- H10W 40/037: {Assembling together parts thereof}
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 40/226: {characterised by projecting parts, e.g. fins to increase surface area (leadframes for cooling H10W70/461)}
- H10W 40/77: Auxiliary members characterised by their shape
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a semiconductor device includes adhering together a heat dissipating body and a plurality of heat generating bodies via a thermally conductive sheet, by applying pressure to the heat dissipating body and the plurality of heat generating bodies in a thickness direction of the thermally conductive sheet with the thermally conductive sheet disposed therebetween, the thermally conductive sheet having a compression modulus of 1.40 MPa or less under a compressive stress of 0.10 MPa at 150° C.

## Claims

### Claim 1

A semiconductor device, comprising:
a thermally conductive sheet having a compression modulus of from 0.50 to 1.40 MPa under a compressive stress of 0.10 MPa at 150° C.,
the thermally conductive sheet adhering together a heat dissipating body and a plurality of heat generating bodies of the semiconductor device, by being disposed between the heat dissipating body and the plurality of heat generating bodies.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the thermally conductive sheet has a thermal conductivity of 7 W/(mK) or higher, the thermal conductivity being obtained using a thermal resistance measured by a steady state method.