# US 12,183,654 B2 · Insulating substrate and power module using the same

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- Number: US 12,183,654 B2
- Document ID: US12183654B2
- Status: Granted
- Kind: B2
- Application number: 18/348,049
- Filed: 2023-07-06
- Published: 2023-11-02
- Granted: 2024-12-31
- Earliest claimed: 2020-10-13
- Assignees: Hyundai Motor Company; Kia Corporation
- Applicants: Hyundai Motor Company; Kia Corporation
- Inventors: Hyeon Uk Kim; Jun Hee Park; Sung Won Park
- Web page: https://patentgrep.com/patent/US12183654B2

## CPC

- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 40/25: characterised by their materials
- H10W 40/778: {in encapsulations}
- H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)}
- H10W 40/10: Arrangements for heating
- H10W 40/47: by flowing liquids, e.g. forced water cooling
- H10W 72/07354: {changes in dispositions}
- H10W 72/347: {Dispositions of multiple die-attach connectors}
- H10W 72/865: {Die-attach connectors and bond wires}
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 74/114: {by a substrate and the encapsulations}
- H10W 76/138: having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W 90/811: {Multiple chips on leadframes}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An insulating substrate provided between the semiconductor chip and a cooler in the dual-side cooled power module includes: an inner metal layer configured to face the semiconductor chip; an outer metal layer configured to face the cooler; and an insulating layer interposed between the inner metal layer and the outer metal layer, wherein at least one inner thermal spreader of a plurality of inner thermal spreader is inserted into the inner metal layer.

## Claims

### Claim 1

An insulating substrate provided between a semiconductor chip and a cooler in a power module, the insulating substrate comprising:
an inner metal layer configured to face the semiconductor chip;
an outer metal layer configured to face the cooler; and
an insulating layer interposed between the inner metal layer and the outer metal layer,
wherein at least one inner thermal spreader of a plurality of inner thermal spreader is inserted into the inner metal layer,
wherein the inner thermal spreader is disposed on a virtual surface where the inner thermal spreader is disposed inside the inner metal layer, including at least an edge of a virtual area transferred vertically from an area in which the semiconductor chip is disposed, along a periphery of the virtual area.

### Claim 2 (depends on 1)

The insulating substrate of claim 1, wherein the inner metal layer is formed as an inner metal plate that is formed of a copper (Cu) material in a plate shape, and
the inner thermal spreader is formed of a material including at least graphite, and disposed parallel to a surface facing the semiconductor chip among surfaces of the inner metal plate.

### Claim 3 (depends on 2)

The insulating substrate of claim 2, wherein the inner thermal spreader is formed of a graphene.

### Claim 4 (depends on 2)

The insulating substrate of claim 2, wherein the inner thermal spreader is disposed parallel to a center point of the inner metal plate corresponding to a thickness direction.

### Claim 5 (depends on 1)

The insulating substrate of claim 1, wherein at least one outer thermal spreader of a plurality of outer thermal spreader is inserted into the outer metal layer.

### Claim 6 (depends on 5)

The insulating substrate of claim 5, wherein the outer metal layer is formed as an outer metal plate that is formed of a copper (Cu) material in a plate shape, and the outer thermal spreader is formed of a material including at least graphite, and disposed parallel to a surface facing the semiconductor chip among surfaces of the outer metal plate.

### Claim 7 (depends on 6)

The insulating substrate of claim 6, wherein the outer thermal spreader is formed of a graphene.

### Claim 8

A power module in which a semiconductor chip is provided between a pair of coolers, the power module comprising:
a pair of insulating substrates provided between the semiconductor chip and the pair of coolers, respectively,
each of the insulating substrates including:
an inner metal layer configured to face the semiconductor chip and having at least one inner thermal spreader inserted into the inner metal layer;
an outer metal layer configured to face a corresponding cooler; and
an insulating layer interposed between the inner metal layer and the outer metal layer,
wherein the inner thermal spreader is disposed on a virtual surface where the inner thermal spreader is disposed inside the inner metal layer, including at least an edge of a virtual area transferred vertically from an area in which the semiconductor chip is disposed, along a periphery of the virtual area.

### Claim 9 (depends on 8)

The power module of claim 8, further comprising:
a signal lead configured to transmit and receive a signal to and from the semiconductor chip;
a wire connecting the semiconductor chip and the signal lead; and
a spacer disposed between the semiconductor chip and the pair of insulating substrates.

### Claim 10 (depends on 8)

The power module of claim 8, wherein the inner metal layer is formed as an inner metal plate that is formed of a copper (Cu) material in a plate shape, and
the inner thermal spreader is formed of a material including at least graphite, and disposed parallel to a surface facing the semiconductor chip among surfaces of the inner metal plate.

### Claim 11 (depends on 10)

The power module of claim 10, wherein the inner thermal spreader is formed of a graphene.

### Claim 12 (depends on 8)

The power module of claim 8, wherein at least one outer thermal spreader of a plurality of outer thermal spreader is inserted into the outer metal layer.

### Claim 13 (depends on 12)

The power module of claim 12, wherein the outer metal layer is formed as an outer metal plate that is formed of a copper (Cu) material in a plate shape, and
the outer thermal spreader is formed of a material including at least graphite, and disposed parallel to a surface facing the semiconductor chip among surfaces of the outer metal plate.

### Claim 14 (depends on 13)

The power module of claim 13, wherein the outer thermal spreader is formed of a graphene.