# US 12,183,651 B2 · Semiconductor device

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- Number: US 12,183,651 B2
- Document ID: US12183651B2
- Status: Granted
- Kind: B2
- Application number: 17/977,957
- Filed: 2022-10-31
- Published: 2023-04-13
- Granted: 2024-12-31
- Earliest claimed: 2015-02-09
- Assignees: Amkor Technology Japan, Inc.
- Applicants: Amkor Technology Japan, Inc.
- Inventors: Masao Hirobe
- Web page: https://patentgrep.com/patent/US12183651B2

## CPC

- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 76/12: characterised by their shape
- H10W 76/60: Seals
- H10W 40/258: {Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)}
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/353: {not comprising solid metals or solid metalloids, e.g. ceramics}
- H10W 72/354: {comprising polymers}
- H10W 72/877: {Bump connectors and die-attach connectors}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

There is provided a semiconductor device including a substrate whose surface is made of an insulation material, a semiconductor chip flip-chip connected on the substrate, and a heat sink bonded to the semiconductor chip via a thermal interface material and fixed to the substrate outside the semiconductor chip, in which the heat sink has a protrusion part protruding toward the substrate and bonded to the substrate via a conductive resin between a part bonded to semiconductor chip and a part fixed to the substrate and the heat sink has a stress absorbing part. According to the present invention, the protrusion part of the heat sink is prevented from being peeled off from the substrate at the part where the protrusion part of the heat sink is bonded to the substrate.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
a semiconductor chip on a first side of the substrate;
an underfill between the semiconductor chip and the first side of the substrate; and
a heatsink over the semiconductor chip, wherein the heatsink comprises:
a central portion over the semiconductor chip;
a fixing part coupled to the first side of the substrate;
a protrusion part coupled to the first side of the substrate between the fixing part and the semiconductor chip; and
a recessed groove between the central portion and the fixing part; and
a thermal interface material (TIM) between the central portion of the heatsink and the semiconductor chip, wherein the recessed groove is free of the underfill, and the TIM is discrete from the underfill;
wherein a thickness of the heatsink at the recessed groove is less than a thickness of the heatsink between the protrusion part and the fixing part, and the thickness at the recessed groove is less than a thickness of the central portion of the heatsink; and
wherein the underfill covers a lateral side of the semiconductor chip and a top side of the underfill is at a same level as a top side of the semiconductor chip.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein:
the recessed groove comprises a through hole in the heatsink.

### Claim 3 (depends on 2)

The semiconductor device of claim 2, wherein:
the through hole is adjacent to the protrusion part.

### Claim 4 (depends on 2)

The semiconductor device of claim 2, wherein:
the heatsink comprises a first side and a second side opposite to the first side;
the first side of the heatsink faces the substrate; and
the through hole extends from the first side of the heatsink to the second side of the heatsink.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein:
the recessed groove is U-shaped.

### Claim 6

A semiconductor device, comprising:
a substrate;
a semiconductor chip on a first side of the substrate;
a lid on the first side of the substrate and over the semiconductor chip, wherein the lid comprises:
a fixing part coupled to the first side of the substrate;
a protrusion part coupled to the first side of the substrate between the fixing part and the semiconductor chip; and
a recessed groove between the semiconductor chip and the protrusion part, wherein a thickness of the lid at the recessed groove is less than a thickness of the lid at a central portion of the lid located over the semiconductor chip, and the central portion of the lid extends beyond a footprint of the semiconductor chip;
a thermal interface material (TIM) between the central portion of the lid and the semiconductor chip; and
an underfill between the semiconductor chip and the first side of the substrate, wherein the underfill fully covers a lateral side of the semiconductor chip, and a top side of the underfill is flush with a top side of the semiconductor chip.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein:
a rigidity of the lid at the recessed groove is less than the rigidity of the lid between the protrusion part and the fixing part.

### Claim 8 (depends on 6)

The semiconductor device of claim 6, wherein:
a sidewall of the recessed groove is contiguous with a sidewall of the protrusion part.

### Claim 9 (depends on 6)

The semiconductor device of claim 6, wherein:
the recessed groove is free of the underfill.

### Claim 10 (depends on 6)

The semiconductor device of claim 6, wherein:
the recessed groove comprises a through hole in the lid.

### Claim 11 (depends on 10)

The semiconductor device of claim 10, wherein:
the through hole is adjacent to the protrusion part.

### Claim 12 (depends on 10)

The semiconductor device of claim 10, wherein:
the through hole extends from a first side of the lid to a second side of the lid.

### Claim 13 (depends on 12)

The semiconductor device of claim 12, wherein:
the first side of the lid faces the substrate, and the second side of the lid is opposite to the first side of the lid.

### Claim 14 (depends on 6)

The semiconductor device of claim 6, wherein:
the recessed groove is U-shaped.

### Claim 15

A semiconductor device, comprising:
a substrate;
a semiconductor chip on a first side of the substrate;
a lid on the first side of the substrate and over the semiconductor chip, wherein the lid comprises:
a fixing part coupled to the first side of the substrate;
a central portion over the semiconductor chip; and
a recessed groove between the central portion and the fixing part, wherein a thickness of the lid at the recessed groove is less than a thickness of the lid at the central portion of the lid and less than a thickness of the lid adjacent to the fixing part;
an underfill between the semiconductor chip and the first side of the substrate; and
a thermal interface material (TIM) between the central portion of the lid and the semiconductor chip;
wherein the underfill covers a lateral side of the semiconductor chip and a top side of the underfill is at a same level as a top side of the semiconductor chip.

### Claim 16 (depends on 15)

The semiconductor device of claim 15, wherein:
the recessed groove comprises a through hole in the lid.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, wherein:
the lid comprises a first side and a second side opposite to the first side;
the first side of the lid faces the substrate; and
the through hole extends from the first side of the lid to the second side of the lid.

### Claim 18 (depends on 15)

The semiconductor device of claim 15, wherein:
the recessed groove is free of the underfill.

### Claim 19 (depends on 15)

The semiconductor device of claim 15, wherein:
the recessed groove is U-shaped.