# US 12,183,650 B2 · Heat extraction path from a laser die using a highly conductive thermal interface material in an optical transceiver

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- Number: US 12,183,650 B2
- Document ID: US12183650B2
- Status: Granted
- Kind: B2
- Application number: 17/131,642
- Filed: 2020-12-22
- Published: 2022-06-23
- Granted: 2024-12-31
- Earliest claimed: 2020-12-22
- Assignees: Intel Corporation
- Applicants: Intel Corporation
- Inventors: Aditi Mallik; Chen Zhuang; Raghuram Narayan
- Web page: https://patentgrep.com/patent/US12183650B2

## CPC

- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 90/401: {characterised by multiple insulating or insulated package substrates, interposers or RDLs}
- H01S 5/02469: {Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC}
- H01S 5/02476: {Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements}
- H10W 40/10: Arrangements for heating
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 40/77: Auxiliary members characterised by their shape
- H01S 5/02345: Wire-bonding
- H01S 5/0239: Combinations of electrical or optical elements
- H01S 5/02438: {Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A semiconductor package comprises a substrate and a ceramic carrier mounted to the substrate. An integrated circuit (IC) die is mounted to the ceramic carrier. A heat extraction path away from the IC die comprises: i) a thermal interface material over the IC die, the thermal interface material having a thickness of approximately 25 to 80 um; ii) an integrated heat spreader over the thermal interface material; iii) a ceramic carrier plate over the integrated heat spreader; and iv) an electrically conductive thermal pad between the ceramic carrier plate and a housing of the semiconductor package.

## Claims

### Claim 1

A semiconductor package, comprising:
a substrate;
a ceramic carrier mounted to the substrate;
an integrated circuit (IC) die mounted to the ceramic carrier; and
a heat extraction path away from the IC die, the heat extraction path comprising:
a thermal interface material over the IC die, the thermal interface material having a thickness of approximately 25 to 80 um;
an integrated heat spreader over the thermal interface material;
a ceramic carrier plate over the integrated heat spreader; and
an electrically conductive thermal gap pad between the ceramic carrier plate and a housing of the semiconductor package.

### Claim 2 (depends on 1)

The semiconductor package of claim 1, wherein the heat extraction path further comprises at least one of an integrated passive device (IPD) or a heat sink die (HSD).

### Claim 3 (depends on 2)

The semiconductor package of claim 2, wherein the at least one of the IPD or the HSD is mounted to a top surface of the IC die via copper pillars.

### Claim 4 (depends on 3)

The semiconductor package of claim 3, wherein the IPD is on a first portion of the IC die, and the HSD is over a second portion of the IC die.

### Claim 5 (depends on 2)

The semiconductor package of claim 2, wherein the thermal interface material is over the at least one of the IPD or the HSD.

### Claim 6 (depends on 5)

The semiconductor package of claim 5, wherein the thermal interface material (TIM) is over both the IPD or the HSD and a gap exist between a first portion of the TIM over the IPD and a second portion of the TIM over the HSD.

### Claim 7 (depends on 1)

The semiconductor package of claim 1, wherein the integrated heat spreader comprises copper.

### Claim 8 (depends on 7)

The semiconductor package of claim 7, wherein the integrated heat spreader is approximately 1.6 millimeters in thickness.

### Claim 9 (depends on 1)

The semiconductor package of claim 1, wherein the ceramic carrier plate comprises aluminum nitride (AlN).

### Claim 10 (depends on 9)

The semiconductor package of claim 9, wherein the ceramic carrier plate is approximately 0.38 mm in thickness.

### Claim 11 (depends on 1)

The semiconductor package of claim 1, wherein the electrically conductive thermal gap pad is approximately 0.6 millimeters in thickness.

### Claim 12 (depends on 1)

The semiconductor package of claim 1, wherein the heat extraction path maintains an operating temperature on a top of the IC die that is within a 6-7° C. temperature delta with an operating temperature of the housing.

### Claim 13

An optical transceiver package, comprising:
a printed circuit board assembly (PCBA);
a ceramic carrier or a silicon interposer mounted to the PCBA;
a laser die mounted to the ceramic carrier or the silicon interposer; and
a heat extraction path away from the laser die, the heat extraction path comprising:
an integrated passive device (IPD) on a first portion of the laser die;
a heat sink die (HSD) over a second portion of the laser die;
a thermal interface material over both the IPD and the HSD;
a copper integrated heat spreader (IHS) over the thermal interface material;
a ceramic carrier plate over the copper integrated heat spreader; and
an electrically conductive thermal gap pad between the ceramic carrier plate and a housing of the optical transceiver package.

### Claim 14 (depends on 13)

The optical transceiver package of claim 13, wherein the thermal interface material is approximately 25 to 80 um in thickness.

### Claim 15 (depends on 13)

The optical transceiver package of claim 13 wherein the thermal interface material (TIM) is over both the IPD or the HSD, and a gap exist between a first portion of the TIM over the IPD and a second portion of the TIM over the HSD.

### Claim 16 (depends on 13)

The optical transceiver package of claim 13, further comprising a laser driver die mounted adjacent to the laser die on the PCBA.

### Claim 17 (depends on 16)

The optical transceiver package of claim 16, wherein the copper integrated heat spreader (IHS) extends over both the laser driver die and the laser die.

### Claim 18 (depends on 13)

The optical transceiver package of claim 13, wherein the copper IHS includes at least one portion connected to PCBA ground.

### Claim 19 (depends on 13)

The optical transceiver package of claim 13, wherein the copper IHS is approximately 1.6 millimeters in thickness.

### Claim 20 (depends on 13)

The optical transceiver package of claim 13, wherein the ceramic carrier plate comprises aluminum nitride (AlN).

### Claim 21 (depends on 13)

The optical transceiver package of claim 13, wherein the ceramic carrier plate is approximately 0.38 mm in thickness.

### Claim 22 (depends on 13)

The optical transceiver package of claim 13, wherein the electrically conductive thermal gap pad is approximately 0.6 millimeters in thickness.

### Claim 23 (depends on 13)

The optical transceiver package of claim 13, wherein the heat extraction path maintains an operating temperature on a top of the laser die that is within a 6-7° C. temperature delta with an operating temperature of the housing.