# US 12,183,642 B2 · Film-thickness measuring method, method of detecting notch portion, and polishing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,642 B2 - Document ID: US12183642B2 - Status: Granted - Kind: B2 - Application number: 17/694,125 - Filed: 2022-03-14 - Published: 2022-10-27 - Granted: 2024-12-31 - Earliest claimed: 2021-03-17 - Assignees: Ebara Corporation - Applicants: Ebara Corporation - Inventors: Osamu Nabeya; Shingo Togashi; Keisuke Namiki - Web page: https://patentgrep.com/patent/US12183642B2 ## CPC - B24B 37/005: Control means for lapping machines or devices - H10P 74/238: {comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement} - H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices - H10P 72/0472: {comprising at least one polishing chamber} - H10P 72/7618: {characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel} - H10P 52/403: {of conductive or resistive materials} - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A polishing method capable of accurately determining a polishing end point of a substrate is disclosed. The method is a film-thickness measuring method for a substrate W using a film-thickness measuring device, at least a part of which being mounted in a polishing table configured to support the polishing pad. The method includes measuring film thicknesses of the substrate W, while rotating the substrate W on a polishing surface of the polishing pad by a polishing head and controlling a position of the film-thickness measuring device relative to the polishing head. ## Claims ### Claim 1 A film-thickness measuring method for a substrate using a film-thickness measuring device, at least a part of the film-thickness measuring device being mounted to a polishing table that supports a polishing pad, said method comprising: measuring film thicknesses of the substrate, while rotating the substrate on a polishing surface of the polishing pad by a polishing head and controlling a position of the film-thickness measuring device relative to the polishing head, wherein controlling the position of the film-thickness measuring device relative to the polishing head comprises controlling, in synchronization with the polishing head, at least one of an oscillating motor that oscillates the polishing head along the polishing surface and a table motor that rotates the polishing table. ### Claim 2 (depends on 1) The film-thickness measuring method according to claim 1, wherein during the measuring of the film thicknesses of the substrate, pressures in a plurality of pressure chambers formed by an elastic membrane of the polishing head are regulated such that the polishing head presses the substrate against the polishing surface. ### Claim 3 (depends on 2) The film-thickness measuring method according to claim 2, wherein the pressures in the plurality of pressure chambers are regulated such that an outer portion of the substrate is pressed against the polishing surface while a central portion of the substrate is attracted. ### Claim 4 (depends on 1) The film-thickness measuring method according to claim 1, wherein the film-thickness measuring device is an optical film-thickness measuring device or an eddy-current-type film-thickness measuring device. ### Claim 5 (depends on 1) The film-thickness measuring method according to claim 1, wherein an area where the film thicknesses are measured is a periphery of the substrate. ### Claim 6 (depends on 5) The film-thickness measuring method according to claim 5, wherein controlling the position of the film-thickness measuring device relative to the polishing head comprises controlling the position of the film-thickness measuring device relative to the polishing head based on a rotation angle of the polishing head such that a measuring position for the film thicknesses traces a path extending in a circumferential direction of the periphery. ### Claim 7 (depends on 5) The film-thickness measuring method according to claim 5, wherein: controlling the position of the film-thickness measuring device relative to the polishing head comprises controlling the position of the film-thickness measuring device relative to the polishing head such that a measuring position for the film thicknesses moves in a radial direction of the substrate in a plurality of regions arranged in a circumferential direction of the substrate; and the plurality of regions include at least the periphery of the substrate. ### Claim 8 (depends on 5) The film-thickness measuring method according to claim 5, wherein controlling the position of the film-thickness measuring device relative to the polishing head comprises controlling the position of the film-thickness measuring device relative to the polishing head such that a measuring position for the film thicknesses moves in a circumferential direction of the substrate while meandering in a region including at least the periphery of the substrate. ### Claim 9 (depends on 5) A method of detecting a notch portion, comprising: measuring film thicknesses of a periphery of a substrate by using said method according to claim 5; and determining a position of a notch portion of the substrate based on a measurement result of the film thicknesses. ### Claim 10 A polishing method comprising: polishing a substrate while rotating the substrate on a polishing surface of a polishing pad by a polishing head; measuring a film thickness of the substrate by a film-thickness measuring device during the polishing of the substrate; stopping the polishing of the substrate; when a variation in film thickness of a periphery of the substrate is out of a reference range, measuring film thicknesses of the periphery of the substrate, while rotating the substrate on the polishing surface of the polishing pad by the polishing head and controlling a position of the film-thickness measuring device relative to the polishing head, wherein controlling the position of the film-thickness measuring device relative to the polishing head comprises controlling, in synchronization with the polishing head, at least one of an oscillating motor that oscillates the polishing head along the polishing surface and a table motor that rotates the polishing table; and re-polishing the substrate such that the variation of the film thicknesses of the periphery of the substrate is eliminated.