# US 12,183,636 B2 · Semiconductor substrate, method for manufacturing semiconductor substrate and method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,636 B2 - Document ID: US12183636B2 - Status: Granted - Kind: B2 - Application number: 18/536,188 - Filed: 2023-12-11 - Published: 2024-04-11 - Granted: 2024-12-31 - Earliest claimed: 2018-12-10 - Assignees: Filnex Inc. - Applicants: Filnex Inc. - Inventors: Mitsuhiko Ogihara - Web page: https://patentgrep.com/patent/US12183636B2 ## CPC - H10P 50/646: {of Group III-V materials} - H10P 95/11: {Separation of active layers from substrates} - H10P 50/246: {of Group III-V materials} - H10P 72/74: {using temporarily an auxiliary support} - H10P 90/00: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement - H10P 14/2909: {Phosphides} - H10P 14/2911: {Arsenides} - H10P 14/3221: {Arsenides} - H10P 14/3248: {consisting of two layers} - H10P 14/3418: {Phosphides} - H10P 14/3421: {Arsenides} - H10P 72/7432: {used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate} - H10P 72/7434: {used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor substrate includes: a base substrate; a removal layer, and of which at least a portion is to be removed by performing etching; a semiconductor epitaxial layer provided above the removal layer; and a support member for supporting the semiconductor epitaxial layer in a state where the support member is in contact with side surfaces of the base substrate, the removal layer, and the semiconductor epitaxial layer such that the semiconductor epitaxial layer is positioned above the base substrate, the support member being cut off in a region in contact with the removal layer due to application of a force to the semiconductor epitaxial layer. The thickness of at least a portion of a region of the support member in contact with the removal layer is smaller than the thickness of other regions that are different from the at least the portion of the region in the support member. ## Claims ### Claim 1 A semiconductor substrate, comprising: a base substrate; a removal layer that is provided on the base substrate, and of which at least a portion is to be removed by performing etching; a semiconductor epitaxial layer that is provided above the removal layer; a support member for supporting the semiconductor epitaxial layer in a state where the support member is in contact with side surfaces of the base substrate, the removal layer, and the semiconductor epitaxial layer such that the semiconductor epitaxial layer is positioned above the base substrate, the support member being cut off in a region in contact with the removal layer due to application of a force to the semiconductor epitaxial layer, wherein the thickness of at least a portion of a region of the support member in contact with the removal layer is smaller than the thickness of other regions that are different from the at least the portion of the region in the support member, wherein the base substrate is composed of GaAs, the semiconductor epitaxial layer is composed of AltGa1-tAs (0≤t≤1), and the removal layer is composed of AltGa1-tAs (0.6≤x≤1). ### Claim 2 (depends on 1) The semiconductor substrate according to claim 1, wherein a groove is formed in the at least the portion of the region in the support member. ### Claim 3 (depends on 1) The semiconductor substrate according to claim 1, wherein the support member extends to a top surface of the semiconductor epitaxial layer or a surface where the base substrate is exposed. ### Claim 4 (depends on 1) The semiconductor substrate according to claim 1, wherein the removal layer includes: a first removal layer provided on the base substrate; and a second removal layer provided above the first removal layer, wherein the thickness of a portion of a region of the support member in contact with the second removal layer is smaller than the thickness of other regions. ### Claim 5 A method for manufacturing a semiconductor substrate comprising the steps of: preparing a base substrate; forming a removal layer, of which at least a portion is to be removed by performing etching, on the base substrate; forming a semiconductor epitaxial layer above the removal layer; and providing a support member for supporting the semiconductor epitaxial layer in a state where the support member is in contact with side surfaces of the base substrate, the removal layer, and the semiconductor epitaxial layer such that the semiconductor epitaxial layer is positioned above the base substrate, after forming the semiconductor epitaxial layer, the thickness of at least a portion of a region of the support member in contact with the removal layer being smaller than the thickness of other regions that are different from the at least the portion of the region in the support member, the support member being cut off in a region in contact with the removal layer due to application of a force to the semiconductor epitaxial layer, further comprising: removing at least a portion of the removal layer by performing etching using a predetermined etching material, and cutting off the support member by applying a force in a direction in which the semiconductor epitaxial layer moves away from the base substrate. ### Claim 6 A method for manufacturing a semiconductor device, comprising the steps of: preparing a semiconductor, wherein the semiconductor substrate comprising: a base substrate; a removal layer that is provided on the base substrate, and of which at least a portion is to be removed by performing etching; a semiconductor epitaxial layer that is provided above the removal layer; a support member for supporting the semiconductor epitaxial layer in a state where the support member is in contact with side surfaces of the base substrate, the removal layer, and the semiconductor epitaxial layer such that the semiconductor epitaxial layer is positioned above the base substrate, the support member being cut off in a region in contact with the removal layer due to application of a force to the semiconductor epitaxial layer, wherein the thickness of at least a portion of a region of the support member in contact with the removal layer is smaller than the thickness of other regions that are different from the at least the portion of the region in the support member; removing at least a portion of the removal layer by performing etching using a predetermined etching material; cutting off the support member by applying a force in a direction in which the semiconductor epitaxial layer moves away from the base substrate after the removing; and bonding the semiconductor epitaxial layer to a destination substrate that is different from the base substrate after the cutting off. ### Claim 7 A semiconductor substrate, comprising: a base substrate; a removal layer that is provided on the base substrate, and of which at least a portion is to be removed by performing etching; a semiconductor epitaxial layer that is provided above the removal layer; a support member for supporting the semiconductor epitaxial layer in a state where the support member is in contact with side surfaces of the base substrate, the removal layer, and the semiconductor epitaxial layer such that the semiconductor epitaxial layer is positioned above the base substrate, the support member being cut off in a region in contact with the removal layer due to application of a force to the semiconductor epitaxial layer, wherein the thickness of at least a portion of a region of the support member in contact with the removal layer is smaller than the thickness of other regions that are different from the at least the portion of the region in the support member, wherein the base substrate is composed of InP, the semiconductor epitaxial layer is In1-xGaxAsyP1-y (0≤x, y≤1), and the removal layer is a semiconductor layer that lattice-matches on the base substrate. ### Claim 8 (depends on 7) The semiconductor substrate according to claim 7, wherein a groove is formed in the at least the portion of the region in the support member. ### Claim 9 (depends on 7) The semiconductor substrate according to claim 7, wherein the support member extends to a top surface of the semiconductor epitaxial layer or a surface where the base substrate is exposed. ### Claim 10 (depends on 7) The semiconductor substrate according to claim 7, wherein the removal layer includes: a first removal layer provided on the base substrate; and a second removal layer provided above the first removal layer, wherein the thickness of a portion of a region of the support member in contact with the second removal layer is smaller than the thickness of other regions.