# US 12,183,632 B2 · Bottom lateral expansion of contact plugs through implantation

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- Number: US 12,183,632 B2
- Document ID: US12183632B2
- Status: Granted
- Kind: B2
- Application number: 17/814,981
- Filed: 2022-07-26
- Published: 2022-11-10
- Granted: 2024-12-31
- Earliest claimed: 2020-08-24
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Meng-Han Chou; Su-Hao Liu; Kuo-Ju Chen; Liang-Yin Chen; Huicheng Chang; Yee-Chia Yeo
- Web page: https://patentgrep.com/patent/US12183632B2

## CPC

- H10P 50/667: {by liquid etching only}
- H10W 20/0698: {Local interconnections}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}
- H10D 30/6219: {characterised by the source or drain electrodes}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 64/0112: {using conductive layers comprising silicides}
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10P 32/30: Diffusion for doping of conductive or resistive layers
- H10P 50/264: {by chemical means}
- H10P 50/266: {by vapour etching only}
- H10P 50/283: {by chemical means}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/062: {by smoothing of conductive parts, e.g. by planarisation}
- H10W 20/067: {by modifying the pattern of conductive parts}
- H10W 20/074: {of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}
- H10W 20/083: {the openings being via holes penetrating underlying conductors}
- H10W 20/095: {by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096)}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/438: {Interconnections with multiple fill metals, e.g. having different metals in wide and narrow interconnections, or having different metals in vias and in trenches}
- H10W 20/4437: {the principal metal being a transition metal}
- H10W 20/4441: {the principal metal being a refractory metal}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method includes forming a metallic feature, forming an etch stop layer over the metallic feature, implanting the metallic feature with a dopant, forming a dielectric layer over the etch stop layer, performing a first etching process to etch the dielectric layer and the etch stop layer to form a first opening, performing a second etching process to etch the metallic feature and to form a second opening in the metallic feature, wherein the second opening is joined with the first opening, and filling the first opening and the second opening with a metallic material to form a contact plug.

## Claims

### Claim 1

A structure comprising:
a first dielectric layer;
a metallic feature in the first dielectric layer, wherein an upper portion of the metallic feature comprises a dopant having a first dopant concentration, and a lower portion of the metallic feature has a second dopant concentration of the dopant smaller than the first dopant concentration;
a second dielectric layer over the metallic feature; and
an etch stop layer between the metallic feature and the second dielectric layer;
a contact plug comprising:
a first portion penetrating through the second dielectric layer;
a second portion in the metallic feature, wherein the second portion laterally extends beyond edges of the first portion, and the second portion has a bottom in the upper portion of the metallic feature; and
a third portion in the etch stop layer, wherein the third portion comprises:
a first sub portion directly underlying and overlapped by the first portion of the contact plug; and
a second sub portion forming a ring encircling the first sub portion, wherein the second sub portion extends laterally beyond edges of the first portion of the contact plug.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the dopant comprises germanium.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the lower portion is substantially free from the dopant.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the second sub portion has a height smaller than a thickness of the etch stop layer.

### Claim 5 (depends on 1)

The structure of claim 1, wherein the third portion comprises a portion having a rounded top surface.

### Claim 6 (depends on 1)

The structure of claim 1, wherein the etch stop layer further comprises the dopant.

### Claim 7 (depends on 1)

The structure of claim 1, wherein the second portion comprises a rounded bottom surface extending from a top surface of the metallic feature into the metallic feature.

### Claim 8 (depends on 1)

The structure of claim 1, wherein the metallic feature comprises cobalt, and the contact plug comprises tungsten, with the tungsten in physical contact with the metallic feature and the second dielectric layer.

### Claim 9 (depends on 1)

The structure of claim 1, wherein the first dielectric layer comprises:
an additional upper portion comprising the dopant; and
an additional lower portion lower than and continuously connected to the additional upper portion, wherein the additional lower portion is free from the dopant.

### Claim 10 (depends on 1)

The structure of claim 1, wherein the third portion of the contact plug has a top portion and a bottom portion, with the bottom portion being wider than the top portion.

### Claim 11

A structure comprising:
a gate stack;
a gate spacer contacting a sidewall of the gate stack;
a source/drain region aside of the gate spacer;
a silicide region over and contacting the source/drain region;
a first inter-layer dielectric;
a first contact plug over and contacting the silicide region, with the first contact plug being in the first inter-layer dielectric;
an etch stop layer over and contacting the first contact plug;
a second inter-layer dielectric over and contacting the etch stop layer; and
a second contact plug comprising:
a first portion in the second inter-layer dielectric;
a second portion in the etch stop layer, wherein at least a lower part of the second portion extends laterally beyond edges of the first portion, wherein the lower part of the second portion has a curved surface; and
a third portion extending into the first contact plug, wherein the third portion extends laterally beyond edges of the second portion.

### Claim 12 (depends on 11)

The structure of claim 11, wherein the etch stop layer and an upper part of the first contact plug comprises a dopant, and wherein both of the third portion of the second contact plug and the at least the lower part of the second portion are free from the dopant.

### Claim 13 (depends on 11)

The structure of claim 11, wherein an upper part of the second portion of the second contact plug comprises edges that are flushed with the edges of the first portion.

### Claim 14 (depends on 11)

The structure of claim 11, wherein the third portion has a rounded bottom surface, and wherein a same metallic material extends from the rounded bottom surface of the third portion to a top surface of the first portion to form the second contact plug.

### Claim 15 (depends on 11)

The structure of claim 11, wherein the first portion has straight and vertical sidewalls, and wherein sidewalls of the second portion are curved.

### Claim 16 (depends on 11)

The structure of claim 11, wherein the lower part of the second portion comprises lower portions increasingly wider than respective upper portions.

### Claim 17 (depends on 11)

The structure of claim 11, wherein the lower part of the second portion further comprises a curved sidewall, wherein the curved top surface is connected to the curved sidewall.

### Claim 18 (depends on 13)

The structure of claim 13, wherein the edges of the upper part of the second portion of the second contact plug are straight.

### Claim 19

A structure comprising:
a first dielectric layer;
a first contact plug in the first dielectric layer, wherein upper portions of the first contact plug and the first dielectric layer comprise a dopant having first dopant concentrations, and lower portions of the first contact plug and the first dielectric layer are free from the dopant, and wherein the dopant extends deeper into the first dielectric layer than into the first contact plug;
a second dielectric layer over the first contact plug; and
a second contact plug comprising:
a first portion penetrating through the second dielectric layer; and
a second portion in the first contact plug, wherein the second portion is laterally wider than the first portion, and wherein the first portion and the second portion are continuously connected without distinguishable interface in between.

### Claim 20 (depends on 19)

The structure of claim 19, wherein the dopant comprises germanium.