# US 12,183,627 B2 · Multi process air gap formation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,627 B2 - Document ID: US12183627B2 - Status: Granted - Kind: B2 - Application number: 17/569,142 - Filed: 2022-01-05 - Published: 2023-03-23 - Granted: 2024-12-31 - Earliest claimed: 2021-09-23 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: John Hautala; Charith Nanayakkara - Web page: https://patentgrep.com/patent/US12183627B2 ## CPC - H10W 20/46: comprising air gaps - H10P 14/6329: {using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/665: {Porous materials} - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10W 20/072: {of dielectric parts comprising air gaps} - H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)} - H10W 20/095: {by irradiating with electromagnetic or particle radiation (plasma treatment H10W20/096)} - H10W 20/435: {Cross-sectional shapes or dispositions of interconnections} - H10W 20/495: {Capacitive arrangements or effects of, or between wiring layers} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method may include providing an array of patterned features on a substrate, the array of patterned features characterized by a spacing. The method may include directing a sputtering species in a first exposure to the array of patterned features, wherein an upper portion of a patterned feature of the array of patterned features forms a protrusion, extending towards an adjacent patterned feature, of the array of patterned features. The method may also include directing a depositing species in a second exposure to the array of patterned features, wherein an array of voids is formed between adjacent patterned features. ## Claims ### Claim 1 A method, comprising: providing an array of patterned features on a substrate; directing a sputtering species in a first exposure to the array of patterned features, wherein an upper portion of a patterned feature of the array of patterned features forms a protrusion, extending towards an adjacent patterned feature, of the array of patterned features; and directing a depositing species in a second exposure to the array of patterned features, wherein an array of voids is formed between adjacent patterned features, wherein a patterned feature of the array of patterned features comprises a conductive portion, and an outer layer, comprising an insulator material, disposed over an outer surface of the conductive portion, wherein the outer layer comprises an initial thickness before the first exposure, wherein an ion dose and ion energy of the sputtering species of the first exposure is effective to remove a targeted thickness of the outer layer, wherein the targeted thickness is less than the initial thickness. ### Claim 2 (depends on 1) The method of claim 1, wherein the sputtering species is directed at an angle of incidence of 0 degrees to 45 degrees with respect to a normal to a main surface of the substrate. ### Claim 3 (depends on 1) The method of claim 1, wherein an uppermost point of the array of voids is disposed below a level of an upper surface of the array of patterned features. ### Claim 4 (depends on 1) The method of claim 1, the directing the depositing species comprises performing a chemical vapor deposition process. ### Claim 5 (depends on 4) The method of claim 4, wherein the directing the depositing species comprises performing a directional chemical vapor deposition process using an angled deposition beam. ### Claim 6 (depends on 5) The method of claim 5, the angled deposition beam having an angle of incidence of 5 degrees to 60 degrees with respect to a normal to a main plane of the substrate. ### Claim 7 A method, comprising: providing an array of patterned features on a substrate, the array of patterned features comprising a conductive portion, and an outer layer, comprising an insulator material, disposed over an outer surface of the conductive portion; directing a sputtering species in a first exposure to the array of patterned features, wherein an upper portion of the outer layer forms a protrusion, extending towards an adjacent patterned feature, of the array of patterned features; and directing a depositing species in a second exposure to the array of patterned features, wherein an array of voids is formed between adjacent patterned features, wherein the outer layer comprises an initial thickness before the first exposure, wherein an ion dose and ion energy of the sputtering species of the first exposure is effective to remove a targeted thickness of the outer layer, wherein the targeted thickness is less than the initial thickness. ### Claim 8 (depends on 7) The method of claim 7, wherein the sputtering species is directed at an angle of incidence of 0 degrees to 45 degrees with respect to a normal to a main surface of the substrate. ### Claim 9 (depends on 7) The method of claim 7, wherein an uppermost point of the array of voids is disposed below a level of an upper surface of the array of patterned features. ### Claim 10 (depends on 7) The method of claim 7, the directing the depositing species comprises performing a chemical vapor deposition process. ### Claim 11 (depends on 10) The method of claim 10, wherein the directing the depositing species comprises performing a directional chemical vapor deposition process using an angled deposition beam. ### Claim 12 (depends on 11) The method of claim 11, the angled deposition beam has an angle of incidence of 5 degrees to 60 degrees with respect to a normal to a main plane of the substrate. ### Claim 13 A method of forming an airgap device structure, comprising: providing an array of patterned features on a substrate, the array of patterned features, comprising a conductive portion, and an outer layer, comprising an insulator material, disposed over an outer surface of the conductive portion; directing a sputtering species in a first exposure to the array of patterned features, wherein an upper portion of the outer layer forms a protrusion, extending towards an adjacent patterned feature, of the array of patterned features, and wherein the sputtering species do not strike a bottom surface of the array of patterned features; and directing a depositing species in a second exposure to the array of patterned features, the second exposure comprising a directional plasma enhanced chemical vapor deposition process, wherein an array of voids is formed between adjacent patterned features, wherein the outer layer comprises an initial thickness before the first exposure, wherein an ion dose and ion energy of the sputtering species of the first exposure is effective to remove a targeted thickness of the outer layer, wherein the targeted thickness is less than the initial thickness. ### Claim 14 (depends on 13) The method of claim 13, wherein the first exposure and the second exposure are performed in a common apparatus. ### Claim 15 (depends on 13) The method of claim 13, wherein the depositing species form an SiO-based material. ### Claim 16 (depends on 13) The method of claim 13, wherein an uppermost point of the array of voids is disposed below a level of an upper surface of the array of patterned features.