# US 12,183,588 B2 · Wet etching method

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- Number: US 12,183,588 B2
- Document ID: US12183588B2
- Status: Granted
- Kind: B2
- Application number: 17/453,485
- Filed: 2021-11-03
- Published: 2022-05-05
- Granted: 2024-12-31
- Earliest claimed: 2020-11-04
- Assignees: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation
- Applicants: Semiconductor Manufacturing International (Shanghai) Corporation; Semiconductor Manufacturing International (Beijing) Corporation
- Inventors: Tianyang Sun; Qiao Yu; Xiaoshan Zhang
- Web page: https://patentgrep.com/patent/US12183588B2

## CPC

- H10P 50/667: {by liquid etching only}
- C09K 13/00: Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40})
- C09K 13/04: containing an inorganic acid
- C09K 13/08: containing a fluorine compound
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

## Abstract

A wet etching method is provided in the present disclosure. The method includes providing a substrate, where a layer to-be-etched is on a surface of the substrate; and performing etching treatments on the layer to-be-etched till a thickness of the layer to-be-etched reaches a target thickness. Each etching treatment includes performing a first etching process, where the substrate is at a first rotation speed; after the first etching process, performing a second etching process, where a rotation speed of the substrate is reduced from the first rotation speed to a second rotation speed, and a liquid film of a chemical solution on the surface of the substrate is increased to a first thickness; and after the second etching process, performing a third etching process, where the substrate is at a third rotation speed, and the third rotation speed is lower than or equal to the first rotation speed.

## Claims

### Claim 1

A wet etching method, comprising:
providing a substrate, wherein a layer to-be-etched is on a surface of the substrate; and
performing a plurality of etching treatments on the layer to-be-etched till a thickness of the layer to-be-etched reaches a target thickness, wherein each etching treatment includes:
performing a first etching process, wherein in the first etching process, the substrate is at a first rotation speed;
after the first etching process, performing a second etching process, wherein in the second etching process, a rotation speed of the substrate is reduced from the first rotation speed to a second rotation speed, and a liquid film of a chemical solution on the surface of the substrate is increased to a first thickness; and
after the second etching process, performing a third etching process, wherein the substrate is at a third rotation speed, the third rotation speed is lower than or equal to the first rotation speed, and a flow rate of the chemical solution in the third etching process is greater than 0, less than a flow rate of the chemical solution in the first etching process, and less than a flow rate of the chemical solution in the second etching process.

### Claim 2 (depends on 1)

The method according to claim 1, wherein:
the chemical solution contains an inorganic acid including hydrofluoric acid, hydrochloric acid, phosphoric acid, or a combination thereof.

### Claim 3 (depends on 1)

The method according to claim 1, wherein:
the chemical solution contains an organic acid including acetic acid, oxalic acid, or a combination thereof.

### Claim 4 (depends on 1)

The method according to claim 1, wherein:
the chemical solution includes a deionized water solution with introduced carbon dioxide.

### Claim 5 (depends on 1)

The method according to claim 1, wherein:
the flow rate of the chemical solution in the first etching process ranges from about 0.5 liters per minute to about 2.5 liters per minute, an etching time ranged from about 0 second to about 60 seconds, and the first rotation speed ranged from about 100 revolutions per minute to about 500 revolutions per minute.

### Claim 6 (depends on 1)

The method according to claim 1, wherein:
the flow rate of the chemical solution in the second etching process ranges ranged from about 0.5 liters per minute to about 2.5 liters per minute, and the second rotation speed ranged from about 10 revolutions per minute to about 100 revolutions per minute.

### Claim 7 (depends on 1)

The method according to claim 1, wherein:
the flow rate of the chemical solution in the third etching process is smaller than or equal to 0.5 liter per minute, and the third rotation speed ranged from about 10 revolutions per minute to about 100 revolutions per minute.

### Claim 8 (depends on 1)

The method according to claim 1, wherein:
in the second etching process, a unit time period is provided, and the rotation speed of the substrate is reduced by 100 revolutions per minute in the unit time period.

### Claim 9 (depends on 8)

The method according to claim 8, wherein:
the unit time period ranges from about 0.1 second to about 3 seconds.

### Claim 10 (depends on 1)

The method according to claim 1, wherein:
the layer to-be-etched is made of a metal including cobalt, aluminum, copper, titanium/aluminum alloy, or a combination thereof.

### Claim 11 (depends on 1)

The method according to claim 1, wherein:
a number of the plurality of etching treatments ranges from 2 to 20.

### Claim 12 (depends on 1)

The method according to claim 1, wherein:
the first thickness is greater than 0.3 mm.

### Claim 13

A wet etching method, comprising:
providing a substrate, wherein a layer to-be-etched is on a surface of the substrate; and
performing a plurality of etching treatments on the layer to-be-etched till a thickness of the layer to-be-etched reaches a target thickness, wherein each etching treatment includes:
performing a first etching process, wherein in the first etching process, the substrate is at a first rotation speed;
after the first etching process, performing a second etching process, wherein in the second etching process, a rotation speed of the substrate is reduced from the first rotation speed to a second rotation speed, a liquid film of a chemical solution on the surface of the substrate is increased to a first thickness, and the chemical solution contains an organic acid including acetic acid, oxalic acid, or a combination thereof; and
after the second etching process, performing a third etching process, wherein the substrate is at a third rotation speed, and the third rotation speed is lower than or equal to the first rotation speed.

### Claim 14

A wet etching method, comprising:
providing a substrate, wherein a layer to-be-etched is on a surface of the substrate; and
performing a plurality of etching treatments on the layer to-be-etched till a thickness of the layer to-be-etched reaches a target thickness, wherein each etching treatment includes:
performing a first etching process, wherein in the first etching process, the substrate is at a first rotation speed;
after the first etching process, performing a second etching process, wherein in the second etching process, a rotation speed of the substrate is reduced from the first rotation speed to a second rotation speed, a liquid film of a chemical solution on the surface of the substrate is increased to a first thickness, and in the second etching process, a unit time period is provided, and the rotation speed of the substrate is reduced by 100 revolutions per minute in the unit time period; and
after the second etching process, performing a third etching process, wherein the substrate is at a third rotation speed, and the third rotation speed is lower than or equal to the first rotation speed.