# US 12,183,584 B2 · Method of manufacturing semiconductor structure with improved etching process

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- Number: US 12,183,584 B2
- Document ID: US12183584B2
- Status: Granted
- Kind: B2
- Application number: 18/216,800
- Filed: 2023-06-30
- Published: 2024-02-29
- Granted: 2024-12-31
- Earliest claimed: 2022-08-29
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Zhi-Yi Huang; Ying-Cheng Chuang; Tsung-Cheng Chen
- Web page: https://patentgrep.com/patent/US12183584B2

## CPC

- H10P 50/242: {of Group IV materials}
- H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides a manufacturing method of a semiconductor structure. The method includes: forming a conformal layer over a first patterned layer over a substrate; forming a second layer over the conformal layer and between portions of the first patterned layer; performing a first etching to form a second patterned layer and a patterned conformal layer; performing a second etching to remove a portion of the first patterned layer to form a first inclined member of the first patterned layer tapered away from the substrate and lining a vertical portion of the patterned conformal layer, and to remove a portion of the second patterned layer to form a second inclined member of the second patterned layer tapered away from the substrate and lining the vertical portion of the patterned conformal layer; and performing a third etching to remove the vertical portions of the patterned conformal layer.

## Claims

### Claim 1

A method of manufacturing a semiconductor structure, comprising:
forming a first patterned layer over a substrate;
forming a second patterned layer over the substrate and alternately arranged with the first patterned layer;
forming a patterned conformal layer between the first patterned layer and the second patterned layer, wherein top surfaces of the first patterned layer, the patterned conformal layer, and the second patterned layer are substantially coplanar;
forming a first recess extending into the first patterned layer and surrounded by the patterned conformal layer;
removing vertical portions of the patterned conformal layer; and
planarizing top surfaces of the first patterned layer and the second patterned layer;
wherein the removal of the vertical portions of the patterned conformal layer and the planarizing of the top surfaces of the first patterned layer and the second patterned layer are performed concurrently.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
forming a plurality of recesses on the substrate prior to the formation of the first patterned layer; and
forming a conformal layer prior to the formation of the second patterned layer, wherein the conformal layer is conformal to the substrate and the first patterned layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein sidewalls of the first patterned layer are substantially aligned with sidewalls of the plurality of recesses on the substrate.

### Claim 4 (depends on 1)

The method of claim 1, wherein at least a portion of the patterned conformal layer is disposed below the first patterned layer.

### Claim 5 (depends on 1)

The method of claim 1, further comprising:
forming a second recess extending into the second patterned layer, concurrently with the formation of the first recess.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first recess is formed by a dry etching.

### Claim 7 (depends on 1)

The method of claim 1, wherein a directional dry etching is performed to remove the vertical portions of the patterned conformal layer and to planarize the top surfaces of the first patterned layer and the second patterned layer.

### Claim 8 (depends on 7)

The method of claim 7, wherein the directional dry etching has a high selectivity to the patterned conformal layer.

### Claim 9 (depends on 1)

The method of claim 1, wherein the second patterned layer is separated from the first patterned layer by a plurality of gaps and from the substrate by the patterned conformal layer after the planarization.

### Claim 10 (depends on 1)

The method of claim 1, wherein the first patterned layer includes a first height substantially equal to a height of the patterned conformal layer and a second height substantially less than the height of the patterned conformal layer.

### Claim 11 (depends on 1)

The method of claim 1, wherein the first patterned layer and the second patterned layer include a same material.

### Claim 12 (depends on 1)

The method of claim 1, wherein the patterned conformal layer includes a material different from that of the first patterned layer or the second patterned layer.

### Claim 13

A method of manufacturing a semiconductor structure, comprising:
providing a substrate;
forming a first layer over the substrate;
patterning the first layer to form a first patterned layer and to expose portions of the substrate;
forming a conformal layer over the first patterned layer and the substrate;
forming a second layer over the conformal layer, wherein the second layer at least fills between different portions of the first patterned layer;
removing portions of the conformal layer and the second layer disposed over the first patterned layer to form a patterned conformal layer and a second patterned layer, wherein top surfaces of the first patterned layer, the second patterned layer and the patterned conformal layer are substantially coplanar;
performing a first etching to form a first recess on the first patterned layer and a second recess on the second patterned layer, wherein each of the first recess and the second recess is surrounded by the patterned conformal layer; and
performing a second etching to remove vertical portions of the patterned conformal layer to separate the first patterned layer and the second patterned layer with a plurality of gaps.

### Claim 14 (depends on 13)

The method of claim 13, further comprising:
transferring a pattern of the first patterned layer and the second patterned layer to the substrate, wherein the pattern is transferred to a topmost layer of the substrate.

### Claim 15 (depends on 13)

The meth of claim 13, wherein a top surface of the substrate is substantially planar.

### Claim 16 (depends on 13)

The method of claim 13, wherein a horizontal portion of the conformal layer is in contact with the substrate.

### Claim 17 (depends on 13)

The method of claim 13, wherein the first layer or the second layer includes oxide.

### Claim 18 (depends on 13)

The method of claim 13, wherein the conformal layer includes nitride.

### Claim 19 (depends on 13)

The method of claim 13, wherein a total thickness of the second patterned layer and the conformal layer is substantially greater than a thickness of the first patterned layer.

### Claim 20 (depends on 13)

The method of claim 13, further comprising:
forming a sacrificial layer over the second layer, wherein a top surface of the sacrificial layer is substantially planar.