# US 12,183,582 B2 · Film deposition method and element including film deposited by the film deposition method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,183,582 B2 - Document ID: US12183582B2 - Status: Granted - Kind: B2 - Application number: 17/548,997 - Filed: 2021-12-13 - Published: 2023-01-26 - Granted: 2024-12-31 - Earliest claimed: 2021-07-22 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Changseok Lee; Sangwon Kim; Keunwook Shin - Web page: https://patentgrep.com/patent/US12183582B2 ## CPC - H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD] - H10W 20/056: {by filling conductive material into holes, grooves or trenches} - H10D 64/01: Manufacture or treatment - H10D 64/0113: {the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers} - H10P 14/2925: {Surface structures} - H10P 14/3402: {characterised by the chemical composition} - H10P 14/3452: {Microstructure} - H10P 14/418: {the conductive layers comprising transition metals} - H10P 14/44: Physical vapour deposition [PVD] - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - H10P 14/6902: {composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon} - H10P 14/69391: {the material containing aluminium, e.g. Al2O3} - H10P 14/69392: {the material containing hafnium, e.g. HfO2} - H10W 20/0595: {by using multiple deposition steps separated by etching steps} - H10P 14/3406: {Carbon, e.g. diamond-like carbon} - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 14/3412: {including tin} - H10P 14/3416: {Nitrides} - H10P 14/3436: {being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A film deposition method may include preparing a non-planar substrate including a first surface, a second surface, and an inclined surface between the first surface and the second surface; depositing a film having a thickness deviation on the first surface, the second surface, and the inclined surface; and etching the film deposited on the first surface, the second surface, and the inclined surface. A height of the second surface may be different than a height of the first surface. ## Claims ### Claim 1 A film deposition method comprising: preparing a non-planar substrate comprising a first surface, a second surface and an inclined surface between the first surface and the second surface, a height of the second surface being different than a height of the first surface; depositing a film having a thickness deviation on the first surface, the second surface, and the inclined surface, and wherein the depositing the film forms the film directly on the first surface, the second surface, and the inclined surface; and etching the film deposited on the first surface, the second surface, and the inclined surface, wherein after the etching of the film, the film is about 0.1 nm to about 100 nm thick on the first surface, the second surface, and the inclined surface, wherein the depositing the film and the etching the film are included in one cycle, and the cycle is performed a plurality of times, and wherein, after the cycle is performed a plurality of times, a ratio of a thickness of the film on the first surface to a thickness of the film on the second surface is about 0.9 to about 1.1, and a ratio of a thickness of the film on the inclined surface to the thickness of the film on the second surface is about 0.9 to about 1.1. ### Claim 2 (depends on 1) The film deposition method of claim 1, wherein after the depositing of the film, a thickness of the film deposited on the second surface is greater than a thickness of the film deposited on the first surface, and an etching rate of the film on the second surface is greater than an etching rate of the film on the first surface. ### Claim 3 (depends on 1) The film deposition method of claim 1, wherein the etching of the film is terminated when the thickness of the film on the first surface is about 0.9 times to about 1.1 times the thickness of the film deposited on the second surface. ### Claim 4 (depends on 1) The film deposition method of claim 1, wherein, after the etching of the film, a thickness of the film deposited on the first surface and a thickness of the film deposited on the second surface are equal to each other, or a difference between the thickness of the film deposited on the first surface and the thickness of the film deposited on the second surface is about 10% or less of the thickness of the film deposited on the first surface. ### Claim 5 (depends on 1) The film deposition method of claim 1, wherein, after the etching of the film, a thickness of the film deposited on the first surface and a thickness of the film deposited on the inclined surface are equal to each other, or a difference between the thickness of the film deposited on the first surface and the thickness of the film deposited on the inclined surface is about 10% or less of the thickness of the film deposited on the first surface. ### Claim 6 (depends on 1) The film deposition method of claim 1, wherein the film comprises at least one selected from the group consisting of Ta, Ti, Co, Ru, W, Cu, Mo, Al, RuMn, TiN, TaN, SiN, WSix, AlOx, HfOx, germanium antimony telluride (GST), amorphous carbon, two-dimensional graphene, MoS2, MoSe2, WS2, WSe2, WTe2, PtS2, PtSe2, ZrS2, ZrSe2, GaSe, GaTe2, HfS2, HFSe2, SnSe, PdSe2, PtSe2, PdTe2, ReSe2, VS2, VSe2, NbSe2, FeSe2, FeTe2, h-BN, a-BN, silicene, stanene, tellurene, borophene, antimonene, Bi2Se3, and Bi2O2Se. ### Claim 7 (depends on 1) The film deposition method of claim 1, wherein the depositing of the film is performed by at least one of atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), and sputtering, and the etching of the film is performed by at least one of atomic layer etching (ALE), reactive ion etching (RIE), and plasma etching in which an etching gas is injected. ### Claim 8 (depends on 1) The film deposition method of claim 1, wherein, after the cycle is performed a plurality of times, a thickness of the film deposited on the first surface and a thickness of the film deposited on the second surface are equal to each other. ### Claim 9 (depends on 1) The film deposition method of claim 1, wherein the non-planar substrate includes a trench comprising the first surface and the inclined surface, and while the cycle is performed a plurality of times, the trench is filled with a material. ### Claim 10 (depends on 9) The film deposition method of claim 9, wherein the material comprises at least one selected from the group consisting of Ta, Ti, Co, Ru, W, Cu, Mo, Al, RuMn, TiN, TaN, SiN, WSix, AlOx, HfOx, germanium antimony telluride (GST), amorphous carbon, two-dimensional graphene, MoS2, MoSe2, WS2, WSe2, WTe2, PtS2, PtSe2, ZrS2, ZrSe2, GaSe, GaTe2, HfS2, HFSe2, SnSe, PdSe2, PtSe2, PdTe2, ReSe2, VS2, VSe2, NbSe2, FeSe2, FeTe2, h-BN, a-BN, silicene, stanene, tellurene, borophene, antimonene, Bi2Se3, and Bi2O2Se. ### Claim 11 (depends on 1) The film deposition method of claim 1, wherein the non-planar substrate comprises at least one of a trench structure, a pillar structure, and a hollow structure. ### Claim 12 (depends on 1) The film deposition method of claim 1, wherein an aspect ratio of the first surface and the inclined surface is about 0.5 to about 100. ### Claim 13 A film deposition method comprising: preparing a substrate comprising a micropattern; forming a film on the micropattern, the film comprising a material; and adjusting a thickness of the film to be equal to or less than a given distance from the micropattern, wherein the given distance ranges from about 0.1 nm to about 100 nm, and after the adjusting the thickness of the film, a ratio of a minimum thickness of the film and a maximum thickness of the film is within a range of about 0.9 to about 1.1, wherein the forming the film on the micropattern forms the film directly on the micropattern, wherein the forming of the film and the adjusting the thickness of the film are included in one cycle, and the cycle is performed a plurality of times. ### Claim 14 (depends on 13) The film deposition method of claim 13, wherein the film comprises at least one selected from the group consisting of Ta, Ti, Co, Ru, W, Cu, Mo, Al, RuMn, TiN, TaN, SiN, WSix, AlOx, HfOx, germanium antimony telluride (GST), amorphous carbon, two-dimensional graphene, MoS2, MoSe2, WS2, WSe2, WTe2, PtS2, PtSe2, ZrS2, ZrSe2, GaSe, GaTe2, HfS2, HFSe2, SnSe, PdSe2, PtSe2, PdTe2, ReSe2, VS2, VSe2, NbSe2, FeSe2, FeTe2, h-BN, a-BN, silicene, stanene, tellurene, borophene, antimonene, Bi2Se3, and Bi2O2Se. ### Claim 15 (depends on 13) The film deposition method of claim 13, wherein the forming the film comprises is performed by at least one of atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), and sputtering, and the adjusting the thickness is performed by at least one of atomic layer etching (ALE), reactive ion etching (RIE), and plasma etching in which an etching gas is injected. ### Claim 16 (depends on 13) The film deposition method of claim 13, wherein the micropattern comprises at least one selected from the group consisting of a trench structure, a pillar structure, and a hollow structure. ### Claim 17 (depends on 1) The film deposition method of claim 1, wherein the film comprises at least one selected from the group consisting of Cu, Mo, Al, SiN, WSix, germanium antimony telluride (GST), amorphous carbon, two-dimensional graphene, MoS2, MoSe2, WS2, WSe2, WTe2, PtS2, PtSe2, ZrS2, ZrSe2, GaSe, GaTe2, HfS2, HFSe2, SnSe, PdSe2, PtSe2, PdTe2, ReSe2, VS2, VSe2, NbSe2, FeSe2, FeTe2, h-BN, a-BN, silicene, stanene, tellurene, borophene, antimonene, Bi2Se3, and Bi2O2Se.