# US 12,183,575 B2 · Method of fabricating gallium nitride substrate using ion implantation

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- Number: US 12,183,575 B2
- Document ID: US12183575B2
- Status: Granted
- Kind: B2
- Application number: 17/418,486
- Filed: 2019-09-30
- Published: 2022-04-14
- Granted: 2024-12-31
- Earliest claimed: 2018-12-26
- Assignees: Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Applicants: IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)
- Inventors: Jea Gun Park; Tae Hun Shim; Jae Hyoung Shim; Jin Seong Park; Jae Un Lee
- Web page: https://patentgrep.com/patent/US12183575B2

## CPC

- H10P 14/3416: {Nitrides}
- H10P 30/206: {into Group III-V semiconductors}
- H10H 20/018: {Bonding of wafers}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3822: {Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing}
- H10P 30/208: {of electrically inactive species}
- H10P 90/00: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P 90/12: {Preparing bulk and homogeneous wafers}
- H10P 90/123: {by grinding or lapping}
- H10P 95/904: {of Group III-V semiconductors}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.

## Claims

### Claim 1

A method of fabricating a gallium nitride substrate, comprising:
a step of forming a first gallium nitride layer on a substrate;
a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer;
a step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer;
a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge; and
a step of separating the second gallium nitride layer from the first gallium nitride layer having the ground edge,
wherein the step of implanting hydrogen ions into the first gallium nitride layer to form the separation layer comprises a step of implanting hydrogen ions at a dose of 1.75 E17 H+/cm2 to 2.0 E17 H+/cm2 into the first gallium nitride layer and then performing heat treatment at a temperature of about 500° C. for about 30 minutes, to form the separation layer and to form a plurality of cavities inside the separation layer,
the step of forming a second gallium nitride layer comprises a step of growing the second gallium nitride layer of about 800 μm on the first gallium nitride layer having the ground edge using the first gallium nitride layer having the ground edge as a seed layer,
the step of separating the second gallium nitride layer comprises a step of separating the second gallium nitride layer at room temperature based on the cavities,
the step of implanting is performed under the conditions where implantation of hydrogen ions is carried out at an implantation energy of about 70 keV, and a projection range is about 270 nm, and
the second gallium nitride layer, under the conditions of 1.75E17 H+/cm2 and 2.0E17 H+/cm2, is separated, with 95% or more of the area.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the step of forming the first gallium nitride layer on the substrate comprises a step of forming the first gallium nitride layer using a metal-organic chemical vapor deposition (MOCVD) process.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the step of grinding edges of the substrate, the first gallium nitride layer, and the separation layer comprises a step of grinding edges of the first gallium nitride layer and the substrate to suppress growth of polycrystalline gallium nitride from the edges of the first gallium nitride layer and the substrate or to weaken adhesion between the polycrystalline gallium nitride and the substrate.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the substrate is formed using at least one of sapphire, gallium arsenide (GaAs), spinel, silicon (Si), indium phosphide (InP), and silicon carbide (SiC).

### Claim 5 (depends on 1)

The method according to claim 1, wherein the step of forming the second gallium nitride layer on the first gallium nitride layer having the ground edge comprises a step of forming the second gallium nitride layer using a hydride vapor phase epitaxy (HVPE) process.