# US 12,183,573 B2 · Device and method for high pressure anneal

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- Number: US 12,183,573 B2
- Document ID: US12183573B2
- Status: Granted
- Kind: B2
- Application number: 18/365,517
- Filed: 2023-08-04
- Published: 2023-11-30
- Granted: 2024-12-31
- Earliest claimed: 2018-06-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Szu-Ying Chen; Ya-Wen Chiu; Cheng-Po Chau; Yi Che Chan; Chih Ping Liao; YungHao Wang; Sen-Hong Syue
- Web page: https://patentgrep.com/patent/US12183573B2

## CPC

- H10P 14/6518: {by introduction of substances into an already-existing insulating layer}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/795: {being in lateral device isolation regions, e.g. STI}
- H10D 64/01338: {with a treatment, e.g. annealing, after the formation of the conductor}
- H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10P 14/2902: {being Group IVA materials}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6529: {by exposure to a gas or vapour}
- H10P 14/6536: {by exposure to radiation, e.g. visible light}
- H10P 95/94: {Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/0698: {Local interconnections}
- H10W 20/096: {by contacting with gases, liquids or plasmas}
- H10W 20/097: {by thermally treating}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Embodiment methods for performing a high pressure anneal process during the formation of a semiconductor device, and embodiment devices therefor, are provided. The high pressure anneal process may be a dry high pressure anneal process in which a pressurized environment of the anneal includes one or more process gases. The high pressure anneal process may be a wet anneal process in which a pressurized environment of the anneal includes steam.

## Claims

### Claim 1

A processing device comprising:
a main body, comprising:
an outer shell having a chamber door, the chamber door being configured to be sealed shut by a high pressure lock; and
an inner shell disposed within the outer shell;
a plurality of pressurized gas sources, each of the pressurized gas sources being connected to the main body by piping;
a water source being connected to the main body by a first piping;
a load chamber disposed adjacent to the main body;
a vent line extending between the inner shell and a venting area, wherein the vent line comprises a plurality of cleaners that are configured to reduce a level of a process gas in the vent line; and
a detector coupled to the vent line, wherein the detector is configured to detect levels of hydrogen gas and oxygen gas in the vent line.

### Claim 2 (depends on 1)

The processing device of claim 1, wherein the plurality of cleaners comprises one or more combustion burners.

### Claim 3 (depends on 1)

The processing device of claim 1, wherein the vent line comprises:
a dry anneal vent line, the dry anneal vent line comprising the plurality of cleaners and the detector; and
a wet anneal vent line.

### Claim 4 (depends on 3)

The processing device of claim 3, wherein the wet anneal vent line comprises a water separator.

### Claim 5 (depends on 4)

The processing device of claim 4 further comprising a first water separator outlet connected to the dry anneal vent line by a second piping.

### Claim 6 (depends on 5)

The processing device of claim 5 further comprising a second water separator outlet connected to a third piping leading to the water source.

### Claim 7 (depends on 1)

The processing device of claim 1 further comprising a nitrogen gas source connected to the vent line by a fourth piping.

### Claim 8 (depends on 7)

The processing device of claim 7 further comprising a controller connected to the detector, the controller configured to adjust a flow of nitrogen gas from the nitrogen gas source to the vent line.

### Claim 9

A processing device comprising:
a processing chamber;
a plurality of source inputs to the processing chamber;
a vent line from the processing chamber;
a dry anneal vent branch being connected to the vent line, the dry anneal vent branch comprising:
a cleaner input line being connected to the vent line;
a cleaner being connected to the cleaner input line; and
a cleaner output line being connected to the cleaner; and
a wet anneal vent branch being connected to the vent line, the wet anneal vent branch comprising:
a water separator input line being connected to the vent line;
a water separator being connected to the water separator input line;
a gas outlet line from the water separator; and
a water outlet line from the water separator.

### Claim 10 (depends on 9)

The processing device of claim 9, further comprising a nitrogen source being connected to the cleaner output line.

### Claim 11 (depends on 10)

The processing device of claim 10, wherein the cleaner output line feeds to a designated area in preparation for venting to an outside environment.

### Claim 12 (depends on 9)

The processing device of claim 9, wherein the gas outlet line feeds into the cleaner output line.

### Claim 13 (depends on 9)

The processing device of claim 9, wherein the plurality of source inputs comprises a water source, and wherein the water outlet line is configured to recirculate to the water source.

### Claim 14 (depends on 9)

The processing device of claim 9, wherein the plurality of source inputs comprises a nitrogen source, a hydrogen source, and an oxygen source.

### Claim 15

A processing device comprising:
a processing chamber attached to a loading chamber, the processing chamber comprising:
a process gas inlet;
an inner chamber; and
a gas outlet;
a plurality of source materials connected to the process gas inlet of the processing chamber by inlet pipes;
a process vent line connected to the gas outlet of the processing chamber; and
a wet anneal vent system connected to the process vent line, the wet anneal vent system comprising:
a water separator;
a water separator inlet to the water separator;
a first water separator outlet from the water separator; and
a second water separator outlet from the water separator, the second water separator outlet being connected to the plurality of source materials.

### Claim 16 (depends on 15)

The processing device of claim 15, further comprising a chemical detector connected to the process vent line, wherein the loading chamber comprises a chamber outlet pipe, and wherein the chamber outlet pipe is connected to the chemical detector.

### Claim 17 (depends on 15)

The processing device of claim 15, further comprising a dry anneal vent system, the dry anneal vent system comprising:
a cleaner, the cleaner comprising at least one of a scrubber or a burner;
a cleaner inlet to the cleaner; and
a cleaner outlet from the cleaner.

### Claim 18 (depends on 17)

The processing device of claim 17, wherein the first water separator outlet is connected to the cleaner outlet.

### Claim 19 (depends on 17)

The processing device of claim 17, wherein the dry anneal vent system comprises a nitrogen source connected to the cleaner outlet.

### Claim 20 (depends on 17)

The processing device of claim 17, wherein a chamber outlet pipe connects the loading chamber to the cleaner inlet of the dry anneal vent system.